2022 umgangatho ophezulu we-MOCVD Susceptor Thenga kwi-intanethi e-China, i-Sic Graphite epitaxy susceptors

Inkcazelo emfutshane:

Ukufakwa kwe-SiC ye-Graphite substrate yezicelo ze-Semiconductor ivelisa inxalenye enobunyulu obuphezulu kunye nokumelana nomoya we-oxidizing.I-CVD SiC okanye i-CVI SiC isetyenziswa kwiGraphite yeendawo ezilula okanye ezintsonkothileyo zoyilo.Ukugquma kungasetyenziswa kubunzima obuhlukeneyo kunye neendawo ezinkulu kakhulu.

Indawo yemvelaphi:E-Zhejiang, eTshayina (eMaphandleni)

Inombolo yoMfanekiso:Inombolo yoMfanekiso:

Ukuqulunqwa kwemichiza:I-SiC eqatywe igraphite

Amandla e-Flexural:470Mpa

I-Thermal conductivity:300 W/mK

Umgangatho:Igqibelele

Umsebenzi:CVD-SiC

Isicelo:Semiconductor / Photovoltaic

Ubuninzi:3.21 g/cc

Ukwandiswa kweThermal:4 10-6/K

Uthuthu: <5ppm

Isampulu:Iyafumaneka

Ikhowudi ye-HS:6903100000

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Iinkcukacha zeMveliso

Iithegi zeMveliso

2022 umgangatho ophezulu we-MOCVD Susceptor Thenga kwi-intanethi e-China, i-Sic Graphite epitaxy susceptors,
Ii-substrates zeGraphite zenkxaso, I-Graphite Susceptors, I-Graphite Susceptors ye-SiC Epitaxy, I-Graphite Susceptors yeSilicon, Izixhasi zegraphite ezine-silicon carbide coating, IZIXHOBO ZESIXHOBO KWI-SEMICONDUCTOR Iitreyi zeGraphite ze-Wafer Susceptors, amaqonga esatellite e-MOCVD, Iiplatifti zesathelayithi ze-SiC ezigqunywe yi-MOCVD,

Izinto eziluncedo ezikhethekileyo ze-SiC-coated graphite susceptors ziquka ukucoceka okuphezulu kakhulu, ukugquma okulinganayo kunye nobomi benkonzo obugqwesileyo.Kananjalo banokumelana neekhemikhali eziphezulu kunye neempawu zokuzinza kwe-thermal.

Ukufakwa kwe-SiC ye-Graphite substrate yezicelo ze-Semiconductor ivelisa inxalenye enobunyulu obuphezulu kunye nokumelana nomoya we-oxidizing.
I-CVD SiC okanye i-CVI SiC isetyenziswa kwiGraphite yeendawo ezilula okanye ezintsonkothileyo zoyilo.Ukugquma kungasetyenziswa kubunzima obuhlukeneyo kunye neendawo ezinkulu kakhulu.

I-SiC yokwaleka / i-MOCVD igqunywe Susceptor

Iimbonakalo:
· Okugqwesileyo kweThermal Shock Resistance
· Okugqwesileyo koKuxhathisa ukothuka koMzimba
· Ukumelana neMichiza okugqwesileyo
· Ukucoceka okuphezulu okuphezulu
· Ukufumaneka kobume obuntsonkothileyo
· Isetyenziswa phantsi kwe-Oxidizing Atmosphere

Iinkcazelo Ngeempawu zeSiseko seMathiriyeli yeGraphite:

Uxinzelelo olubonakalayo:	1.85 g/cm3
Ukuxhathisa koMbane:	11 μΩm
Ukuqina kweFlexural:	49 MPa (500kgf/cm2)
Ukuqina konxweme:	58
Uthuthu:	<5ppm
I-Thermal Conductivity:	116 W/mK (100 kcal/mhr-℃)

Ikhabhoni ibonelela ngezinto zokurhafisa kunye namalungu egraphite kuzo zonke iireactors zangoku ze-epitaxy.Ipotfoliyo yethu ibandakanya i-barrel susceptors kwi-application kunye neeyunithi ze-LPE, i-pancake susceptors ye-LPE, i-CSD, kunye neeyunithi ze-Gemini, kunye ne-wafer-wafer susceptors kwi-application kunye neeyunithi ze-ASM. Ngokudibanisa intsebenziswano eqinile kunye nee-OEM ezikhokelayo, ubuchule bezinto eziphathekayo kunye nolwazi lokuvelisa, i-SGL. inikeza uyilo olulolona lufanelekileyo lwesicelo sakho.