2022 umgangatho ophezulu we-MOCVD Susceptor Thenga kwi-intanethi e-China, i-Sic Graphite epitaxy susceptors

Inkcazelo emfutshane:

Ukufakwa kwe-SiC ye-Graphite substrate yezicelo ze-Semiconductor ivelisa inxalenye enobunyulu obuphezulu kunye nokumelana nomoya we-oxidizing. I-CVD SiC okanye i-CVI SiC isetyenziswa kwiGraphite yeendawo ezilula okanye ezintsonkothileyo zoyilo. Ukugquma kungasetyenziswa kubunzima obuhlukeneyo kunye namalungu amakhulu kakhulu.


  • Indawo yemvelaphi:E-Zhejiang, eTshayina (eMaphandleni)
  • Inombolo yoMfanekiso:Inombolo yoMfanekiso:
  • Ukuqulunqwa kwemichiza:I-SiC eqatywe igraphite
  • Amandla e-Flexural:470Mpa
  • I-Thermal conductivity:300 W/mK
  • Umgangatho:Igqibelele
  • Umsebenzi:CVD-SiC
  • Isicelo:Semiconductor / Photovoltaic
  • Ubuninzi:3.21 g/cc
  • Ukwandiswa kweThermal:4 10-6/K
  • Uthuthu: <5ppm
  • Isampulu:Iyafumaneka
  • Ikhowudi yeHS:6903100000
  • Iinkcukacha zeMveliso

    Iithegi zeMveliso

    2022 umgangatho ophezulu we-MOCVD Susceptor Thenga kwi-intanethi e-China, i-Sic Graphite epitaxy susceptors,
    Ii-substrates zeGraphite zenkxaso, I-Graphite Susceptors, I-Graphite Susceptors ye-SiC Epitaxy, I-Graphite Susceptors yeSilicon, Izixhasi zegraphite ezine-silicon carbide coating, IZIXHOBO ZESIXHOBO KWI-SEMICONDUCTOR Iitreyi zeGraphite ze-Wafer Susceptors, amaqonga esatellite e-MOCVD, Iiplatifti zesathelayithi ze-SiC ezigqunywe yi-MOCVD,

    Ingcaciso yeMveliso

    Izinto eziluncedo ezikhethekileyo ze-SiC-coated graphite susceptors ziquka ukucoceka okuphezulu kakhulu, ukugquma okulinganayo kunye nobomi benkonzo obugqwesileyo. Kananjalo banokumelana neekhemikhali eziphezulu kunye neempawu zokuzinza kwe-thermal.

    Ukufakwa kwe-SiC ye-Graphite substrate yezicelo ze-Semiconductor ivelisa inxalenye enobunyulu obuphezulu kunye nokumelana nomoya we-oxidizing.
    I-CVD SiC okanye i-CVI SiC isetyenziswa kwiGraphite yeendawo ezilula okanye ezintsonkothileyo zoyilo. Ukugquma kungasetyenziswa kubunzima obuhlukeneyo kunye namalungu amakhulu kakhulu.

    I-SiC yokwambathisa / ifakwe i-MOCVD Susceptor

    Iimbonakalo:
    · Okugqwesileyo kweThermal Shock Resistance
    · Okugqwesileyo koKuxhathisa ukothuka koMzimba
    · Ukumelana neMichiza okugqwesileyo
    · Ukucoceka okuphezulu okuphezulu
    · Ukufumaneka kobume obuntsonkothileyo
    · Isetyenziswa phantsi kwe-Oxidizing Atmosphere

     

    Iinkcazelo Ngeempawu zeSiseko seMathiriyeli yeGrafite:

    Uxinzelelo olubonakalayo: 1.85 g/cm3
    Ukuxhathisa koMbane: 11 μΩm
    Ukuqina kweFlexural: 49 MPa (500kgf/cm2)
    Ukuqina konxweme: 58
    Uthuthu: <5ppm
    I-Thermal Conductivity: 116 W/mK (100 kcal/mhr-℃)

    Ikhabhoni ibonelela ngezinto zokurhafisa kunye namalungu egraphite kuzo zonke iireactors zangoku ze-epitaxy. Ipotfoliyo yethu ibandakanya i-barrel susceptors kwi-application kunye neeyunithi ze-LPE, i-pancake susceptors ye-LPE, i-CSD, kunye neeyunithi ze-Gemini, kunye ne-wafer-wafer susceptors kwi-application kunye neeyunithi ze-ASM. Ngokudibanisa intsebenziswano eqinile kunye nee-OEM ezikhokelayo, ubuchule bezinto eziphathekayo kunye nolwazi lokuvelisa, i-SGL. inikeza uyilo olulolona lufanelekileyo lwesicelo sakho.

     


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