Lesale la SiC le koahetsoeng ke Graphite

Tlhaloso e Khutšoanyane:

VET Energy SiC e koahetsoeng ka lesale la graphite ke sehlahisoa se sebetsang hantle se etselitsoeng ho fana ka ts'ebetso e tsitsitseng le e tšepahalang ka nako e telele. E na le ho hanyetsa mocheso o motle haholo le ho tšoana ha mocheso, bohloeki bo phahameng, ho hanyetsa khoholeho ea mobu, e leng se etsang hore e be tharollo e phethahetseng bakeng sa lisebelisoa tsa ho lokisa li-wafer.


  • Sebaka sa Tšimoloho :China
  • Sebopeho sa Crystal :FCCβ mohato
  • Density :3,21 g/cm;
  • Ho thatafala :2500 Vickers;
  • Chemical Purity:99.99995%;
  • Mocheso:640J·kg-1·K-1;
  • Sublimation Temperature:2700 ℃;
  • Boholo ba lijo-thollo:2~10μm;
  • Matla a Felexural:415 Mpa (RT 4-Point);
  • Young's Modulus :430 Gpa (4pt bend, 1300 ℃);
  • Katoloso ea Thermal (CTE):4.5 10-6K-1;
  • Thermal Conductivity :300 (W/MK);
  • Lintlha tsa Sehlahisoa

    Li-tag tsa Sehlahisoa

    SiC Coated Graphite Gear Ring ke karolo ea bohlokoa e sebelisoang lits'ebetsong tse fapaneng tsa tlhahiso ea semiconductor. Re sebelisa theknoloji ea rona e nang le tokelo ea molao ho etsa hore sepalangoang sa silicon carbide se be le bohloeki bo phahameng ka ho fetisisa, ho ts'oaroa ka mokhoa o ts'oanang hantle le bophelo bo botle ba ts'ebeletso, hammoho le ho hanyetsa lik'hemik'hale tse phahameng le thepa ea botsitso ba mocheso.

    VET Energy ke moetsi oa 'nete oa lihlahisoa tse ikhethileng tsa graphite le silicon carbide tse nang le kalafo ea holim'a metsi joalo ka SiC coating, TaC coating, glassy carbon coating, pyrolytic carbon coating, joalo-joalo, e ka fana ka likarolo tse fapaneng tse ikhethileng bakeng sa indasteri ea semiconductor le photovoltaic.

    Sehlopha sa rona sa tekheniki se tsoa litsing tse phahameng tsa lipatlisiso tsa lapeng, se ka u fa litharollo tsa lisebelisoa tse eketsehileng bakeng sa hau.

    Re ntse re tsoela pele ho nts'etsapele lits'ebetso tse tsoetseng pele ho fana ka lisebelisoa tse tsoetseng pele, 'me re entse theknoloji e ikhethileng e nang le tokelo ea molao, e ka etsang hore maqhama lipakeng tsa pente le substrate e tiee le hore e se ke ea oela habonolo.

    Likarolo tsa lihlahisoa tsa rona:

    1. Ho hanyetsa mocheso o phahameng oa oxidation ho fihlela ho 1700 ℃.
    2. Bohloeki bo phahameng le ho tšoana ha mocheso
    3. Ho hanyetsa kutu e ntle haholo: acid, alkali, letsoai le li-reagents tsa manyolo.

    4. Boima bo phahameng, bokaholimo bo kopanetsoeng, likaroloana tse ntle.
    5. Bophelo bo bolelele ba tšebeletso le bo tšoarellang haholoanyane

    CVD SiC薄膜基本物理性能

    Lintho tsa motheo tsa 'mele tsa CVD SiCho roala

    性质 / Thepa

    典型数值 / Boleng bo Tlwaelehileng

    晶体结构 / Sebopeho sa Crystal

    FCC mohato oa β多晶,主要為(111)取向

    密度 / Ho teteana

    3.21 g/cm³

    硬度 / Ho thatafala

    2500 维氏硬度 (moroalo oa 500g)

    晶粒大小 / Mabele SiZe

    2 ~ 10μm

    纯度 / Bohloeki ba lik'hemik'hale

    99.99995%

    热容 / Bokhoni ba mocheso

    640 J·kg-1·K-1

    升华温度 / Sublimation Mocheso

    2700 ℃

    抗弯强度 / Flexural Matla

    415 MPa RT 4-ntlha

    杨氏模量 / Young's Modulus

    430 Gpa 4pt kobeha, 1300 ℃

    导热系数 / ThermalBoikhantšo

    300Wm-1·K-1

    热膨胀系数 / Katoloso ea Mocheso(CTE)

    4.5×10-6K-1

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    Re u amohela ka mofuthu hore u etele feme ea rona, ha re buisaneng ka ho eketsehileng!

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