Epitaxy ea IC Single-Crystal Silicon Epitaxy

IC Single-Crystal Silicon Epitaxy e Featured Image

Tlhaloso e Khutšoanyane:

Sebaka sa Tšimoloho:China

Sebopeho sa Crystal :FCCβ mohato

Density :3,21 g/cm;

Ho thatafala:2500 Vickers;

Boholo ba lijo-thollo :2~10μm;

Chemical Purity:99.99995%;

Mocheso oa Mocheso :640J·kg-1·K-1;

Sublimation Temperature :2700 ℃;

Matla a Felexural:415 Mpa (RT 4-Point);

Young's Modulus :430 Gpa (4pt bend, 1300 ℃);

Katoloso ea Thermal (CTE) :4.5 10-6K-1;

Thermal Conductivity:300 (W/MK);

Re romelle lengolo-tsoibila Khoasolla e le PDF

Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Tlhaloso ea Sehlahisoa

Khamphani ea rona e fana ka lits'ebeletso tsa ts'ebetso ea ho roala SiC ka mokhoa oa CVD holim'a graphite, li-ceramics le lisebelisoa tse ling, e le hore likhase tse khethehileng tse nang le carbon le silicon li sebetsane le mocheso o phahameng ho fumana limolek'hule tsa SiC tse hloekileng, limolek'hule tse behiloeng holim'a thepa e koahetsoeng, ho etsa lera la tšireletso la SIC.

Lintlha tse ka sehloohong:

1. Ho hanyetsa mocheso o phahameng oa oxidation:

khanyetso ea oxidation e ntse e le ntle haholo ha mocheso o le holimo ho 1600 C.

2. Bohloeki bo phahameng : bo entsoeng ka ho kenngoa ha mouoane oa lik'hemik'hale tlas'a boemo bo phahameng ba mocheso oa chlorination.

3. Ho hanyetsa khoholeho ea mobu: boima bo phahameng, bokaholimo bo kopanetsoeng, likaroloana tse ntle.

4. Ho hanyetsa kutu: acid, alkali, letsoai le li-reagents tse phelang.

Lintlha tse ka sehloohong tsa CVD-SIC Coating

SiC-CVD Properties
Sebopeho sa Crystal	FCC mohato oa β
Botenya	g/cm³	3.21
Ho thatafala	Vickers thata	2500
Boholo ba lijo-thollo	μm	2~10
Bohloeki ba Lik'hemik'hale	%	99.99995
Matla a Mocheso	J·kg-1 ·K-1	640
Sublimation Mocheso	℃	2700
Felexural Matla	MPa (RT 4-point)	415
Modulus e monyane	Gpa (4pt bend, 1300 ℃)	430
Katoloso ea Thermal (CTE)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300