Sekepe sa Silicon carbide wafer ke sesebelisoa se jereng moroalo bakeng sa li-wafers, tse sebelisoang haholo lits'ebetsong tsa phallo ea letsatsi le semiconductor. E na le litšoaneleho tse kang ho hanyetsa ho roala, ho hanyetsa kutu, ho hanyetsa mocheso o phahameng oa mocheso, ho hanyetsa libomo tsa plasma, matla a ho jara mocheso o phahameng, mocheso o phahameng oa mocheso, mocheso o phahameng oa mocheso, le tšebeliso ea nako e telele eo ho seng bonolo ho e khumama le ho e senya. Khamphani ea rona e sebelisa lisebelisoa tsa silicon carbide tse hloekileng haholo ho netefatsa bophelo ba ts'ebeletso le ho fana ka meralo e ikhethileng, ho kenyeletsoa likepe tse fapaneng tse otlolohileng le tse otlolohileng.
Lethathamo la Boitsebiso
材料Lintho tse bonahalang | R-SiC |
使用温度Mocheso oa ho sebetsa (°C) | 1600°C ( 氧化气氛Tikoloho ea oxidizing)1700°C ( 还原气氛Tikoloho e fokotsang) |
Likahare tsa SiC含量SiC (%) | > 99 |
自由Si 含量 Free Si content (%) | <0.1 |
体积密度Boima ba bongata (g/cm3) | 2.60-2,70 |
气孔率Ho bonahala porosity (%) | <16 |
抗压强度Matla a sithabetsang (MPa) | > 600 |
常温抗弯强度Matla a ho kobeha a batang (MPa) | 80-90 (20°C) |
高温抗弯强度Matla a ho kobeha a chesang (MPa) | 90-100 (1400°C) |
热膨胀系数 Coefficient ea katoloso ea mocheso @1500°C (10-6/°C) | 4.70 |
导热系数Thermal conductivity @1200°C (W/m•K) | 23 |
杨氏模量Elastic modulus (GPA) | 240 |
抗热震性Ho hanyetsa mocheso oa mocheso | 很好E ntle haholo |
Ningbo VET Energy Technology Co., Ltdke khoebo ea theknoloji e phahameng e shebaneng le tlhahiso le thekiso ea thepa e tsoetseng pele ea maemo a holimo, thepa le theknolojiho kenyeletsagraphite, silicon carbide, ceramics, phekolo ea holim'a metsi joalo-joalo. Lihlahisoa li sebelisoa haholo ho photovoltaic, semiconductor, matla a macha, metallurgy, joalo-joalo.
Sehlopha sa rona sa botekgeniki se tsoa litsing tse phahameng tsa lipatlisiso tsa lapeng, se ka fana ka litharollo tsa lisebelisoa tse ngata tsa litsebimolemong oa hau.
Re u amohela ka mofuthu hore u etele feme ea rona, ha re buisaneng ka ho eketsehileng!