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Hordhaca jiilka saddexaad ee semiconductor GaN iyo tignoolajiyada epitaxial ee la xidhiidha
1. Jiilka saddexaad ee semiconductor-ka tignoolajiyada jiilka kowaad waxaa la sameeyay iyadoo lagu salaynayo agabka semiconductor sida Si iyo Ge. Waa aasaaska maadiga ah ee horumarinta transistor-ka iyo tignoolajiyada wareegga isku dhafan. Qalabka semiconductor-ka-koowaad ayaa dhigay f...Sii akhri -
Daraasada jilitaanka tirada ee saamaynta garaafyada daloolka leh ee korriinka carbide silikoon
Habka aasaasiga ah ee koritaanka crystal SiC waxaa loo qaybiyaa sublimation iyo kala-goynta alaabta ceeriin ee heerkulka sare, gaadiidka ee walxaha wajiga gaaska hoos faldient heerkulka, iyo koritaanka recrystallization ee walxaha wajiga gaaska at crystal abuur ah. Iyadoo taas laga duulayo ayaa...Sii akhri -
Noocyada Garaafka Gaarka ah
Garaafyada gaarka ah waa nadiif sare, cufnaan sare iyo walxo garaafeed xoog sare leh waxayna leedahay iska caabin daxaleed oo aad u fiican, xasilloonida heerkulka sare iyo hagaajinta korantada weyn. Waxay ka samaysan tahay graphite dabiici ah ama macmal ah ka dib daaweynta kulaylka sare ee heerkulka sare iyo habaynta cadaadiska sare ...Sii akhri -
Falanqaynta qalabka dhejiska filimka khafiifka ah - mabaadi'da iyo codsiyada qalabka PECVD / LPCVD / ALD
Dhigista filimka khafiifka ah waa in lagu dahaadho lakabka filimka ee walxaha ugu muhiimsan ee semiconductor. Filimkan waxaa laga samayn karaa walxo kala duwan, sida dahaarka silikoon dioxide, polysilicon semiconductor, copper bir, iwm. Qalabka loo isticmaalo daahan waxaa lagu magacaabaa dhigaalka filimka khafiifka ah ...Sii akhri -
Qalabka muhiimka ah ee go'aamiya tayada kobaca silikoon monocrystalline - garoonka kulaylka
Habka kobaca ee silikon monocrystalline si buuxda ayaa loo fuliyaa goobta kulaylka. Goobta kulaylka wanaagsani waxay ku haboontahay hagaajinta tayada kirismaska waxayna leedahay wax ku oolnimada crystallization sare. Naqshadeynta goobta kulaylka ayaa inta badan go'aamisa isbeddelada heerkulbeegyada ...Sii akhri -
Waa maxay dhibaatooyinka farsamada ee foornada koritaanka crystal carbide silicon?
Foornada koritaanka crystal waa qalabka udub dhexaadka u ah koritaanka crystal carbide silicon. Waxay la mid tahay foornada koritaanka crystalline ee dhaqameed ee silikoon. Qaab dhismeedka foornada ma aha mid aad u adag. Waxay inta badan ka kooban tahay jirka foornada, nidaamka kuleylka, habka gudbinta gariiradda ...Sii akhri -
Waa maxay cilladaha lakabka epitaxial silicon carbide
Farsamaynta asaasiga ah ee kobaca qalabka SiC epitaxial waa tiknoolajiyada xakamaynta cilladaha marka hore, gaar ahaan tignoolajiyada xakamaynta cilladda ee u nugul cilladda qalabka ama hoos u dhaca kalsoonida. Daraasadda habka cilladaha substrate-ka ee ku fidsan epi-ka ...Sii akhri -
Hadhuudh taagan oo oksaydhaysan iyo tignoolajiyada koritaanka epitaxial-Ⅱ
3. Kobaca filimka khafiifka ah ee Epitaxial Substrate wuxuu bixiyaa lakabka taageerada jirka ama lakabka korantada ee qalabka korontada ee Ga2O3. Lakabka xiga ee muhiimka ah waa lakabka kanaalka ama lakabka epitaxial ee loo isticmaalo iska caabinta korantada iyo gaadiidka qaada. Si loo kordhiyo danab burburka loona yareeyo korantada...Sii akhri -
Gallium oxide hal crystal iyo tignoolajiyada koritaanka epitaxial
Baadhitaanka ballaaran (WBG) semiconductors oo ay matalaan silicon carbide (SiC) iyo gallium nitride (GaN) ayaa helay dareen baahsan. Dadku waxay leeyihiin rajooyin sare oo ku saabsan rajada codsiga ee carbide silicon ee baabuurta korantada iyo korantada, iyo sidoo kale rajada codsiga gallium ...Sii akhri
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