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Astaamaha silikoon carbide graphite caaryada
Silicon Carbide Graphite Mold Silicon carbide graphite caaryada waa caaryaal isku dhafan oo leh silikoon carbide (SiC) oo ah saldhigga iyo graphite sida walxaha xoojinta. Caaryadani waxay leedahay conductivity kaamerada heer sare ah, iska caabin heerkul sare ah, iska caabin daxalka iyo xirashada dib u...Sii akhri -
Habka semiconductor oo buuxa habka sawir-qaadista
Soo saarista alaab kasta oo semiconductor ah waxay u baahan tahay boqolaal habraac. Waxaan u qaybineynaa dhammaan habka wax-soo-saarka siddeed tallaabo: farsamaynta wafer-oxidation-photolithography-etching-filim khafiif ah-dhigista kobaca epitaxial-fidinta-ion implantation. Si aan kuu caawiyo...Sii akhri -
4 bilyan! SK Hynix wuxuu ku dhawaaqay maalgelinta baakadaha horumarsan ee semiconductor ee Beerta Cilmi-baarista Purdue
West Lafayette, Indiana – SK hynix Inc. ayaa ku dhawaaqday qorshayaal lagu maalgalinayo ku dhawaad $4 bilyan si loo dhiso wax soo saarka baakadaha horumarsan iyo xarunta R&D ee alaabta sirdoonka macmalka ah ee Beerta Cilmi-baarista ee Purdue. Samaynta isku xidhka muhiimka ah silsiladda sahayda semiconductor ee Maraykanka ee Galbeedka Lafayett...Sii akhri -
Tiknoolajiyada Laser-ku waxay horseedaa isbeddelka tignoolajiyada farsamaynta substrate-ka silikoon carbide
1. Dulmarka tignoolajiyada farsamaynta substrate-ka silikoon carbide ee hadda jirta tillaabooyinka farsamaynta substrate-ka waxaa ka mid ah: shiidida goobada dibadda, goyn, shiidida, shiididda, polishing, nadiifinta, iwmSii akhri -
Agabka kulaylka caadiga ah: C/C walxaha ka kooban
Isku-dhafka Kaarboon-kaarboonku waa nooc ka mid ah isku-dhafka fiber-carbon, oo leh fiber-carbon oo ah walxaha xoojinta iyo kaarboonka kaydsan sida matrixka. Matrixka isku-dhafka C/C waa kaarboon. Maadaama ay gebi ahaanba ka kooban tahay carbon elemental, waxa ay leedahay iska caabin heerkul sare oo heersare ah oo aad u wanaagsan.Sii akhri -
Saddex farsamooyin oo waaweyn oo loogu talagalay koritaanka crystal SiC
Sida ku cad sawirka 3, waxaa jira saddex farsamooyin waaweyn oo ujeedadoodu tahay in la bixiyo SiC hal crystal tayo sare leh iyo hufnaan: dareeraha wajiga epitaxy (LPE), gaadiidka uumiga jirka (PVT), iyo kaydinta uumiga kiimikada heerkulka sare (HTCVD). PVT waa hannaan si wanaagsan loo aasaasay oo lagu soo saarayo dembiga SiC...Sii akhri -
Semiconductor-jiilka saddexaad ee GaN iyo tignoolajiyada epitaxial ee la xidhiidha horudhac kooban
1. Jiilka saddexaad ee semiconductor-ka tignoolajiyada jiilka kowaad waxaa la sameeyay iyadoo lagu salaynayo agabka semiconductor sida Si iyo Ge. Waa aasaaska maadiga ah ee horumarinta transistor-ka iyo tignoolajiyada wareegga isku dhafan. Qalabka semiconductor-ka-koowaad ayaa dhigay f...Sii akhri -
23.5 bilyan, Suzhou's super unicorn wuxuu u socdaa IPO
Ka dib 9 sano oo ganacsi ah, Innoscience waxay kor u qaaday in ka badan 6 bilyan oo yuan guud ahaan maalgelinta, qiimaheeduna wuxuu gaadhay 23.5 bilyan yuan oo yaab leh. Liiska maalgashadayaasha waa ilaa iyo daraasiin shirkadood: Fukun Venture Capital, Hantida Dawladdu leedahay ee Dongfang, Suzhou Zhanyi, Wujian...Sii akhri -
Sidee bay alaabta dahaarka leh ee tantalum carbide kor ugu qaadaan caabbinta daxalka ee alaabta?
Dahaarka Tantalum carbide waa tignoolajiyada daawaynta dusha oo caadi ahaan loo isticmaalo taas oo si weyn u wanaajin karta iska caabinta daxalka ee alaabta. Daahan Tantalum carbide waxaa lagu dhejin karaa dusha sare ee substrate iyada oo loo marayo habab diyaarin oo kala duwan, sida kaydinta uumiga kiimikada, physica ...Sii akhri
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