Hordhac saddex tignoolajiyada CVD ee caadiga ah

Dhigista uumiga kiimikada(CVD)waa tignoolajiyada ugu badan ee loo isticmaalo warshadaha semiconductor-ka ee lagu xareeyo agabyo kala duwan, oo ay ku jiraan noocyo kala duwan oo maaddooyin dahaar ah, inta badan qalabka birta iyo walxaha birta ah.

CVD waa tignoolajiyada diyaarinta filimada khafiifka ah ee dhaqameed. Mabda'adeedu waa in la isticmaalo horudhac gaas ah si loo burburiyo qaybo gaar ah oo hore iyada oo loo marayo falcelin kiimiko ah oo u dhexeeya atamka iyo molecules, ka dibna ku samee filim khafiif ah substrate-ka. Astaamaha aasaasiga ah ee CVD waa: isbeddelada kiimikaad (falcelinta kiimikaad ama kala-goynta kulaylka); Dhammaan walxaha filimka ku jira waxay ka yimaadaan ilo dibadda ah; falcelinta waa in ay ka qayb qaataan falcelinta qaab wajiga gaaska.

Dhigista uumiga kiimikada cadaadiska hooseeya (LPCVD), Plasma wanaajiyey kayd kiimikaad kiimikaad (PECVD) iyo cufnaanta sare ee uumiga kiimikada plasma (HDP-CVD) waa saddex teknoolajiyada CVD caadiga ah, kuwaas oo kala duwanaansho weyn u ah dhigaalka alaabta, shuruudaha qalabka, xaaladaha habka, iwm Kuwa soo socdaa waa sharraxaad fudud iyo isbarbardhigga saddexdan tignoolajiyada.

 

1. LPCVD (CVD Cadaadis Hoose)

Mabda'a: Habka CVD ee xaaladaha cadaadiska hooseeya. Mabda'adeedu waa in lagu duro gaaska falcelinta qolka falcelinta ee hoos yimaada vacuum ama jawi cadaadis hooseeya, kala gooyo ama ka falcelinta gaaska heerkul sarreeya, oo samee filim adag oo lagu shubo dusha sare ee substrate. Maaddaama cadaadiska hooseeya uu yareynayo isku dhaca gaaska iyo qalalaasaha, isku-dhafka iyo tayada filimka ayaa la hagaajiyaa. LPCVD waxaa si weyn loogu isticmaalaa Silicon dioxide (LTO TEOS), silicon nitride (Si3N4), polysilicon (POLY), galaas fosfosilicate (BSG), galaas borophosphosilicate (BPSG), polysilicon doped, graphene, carbon nanotubes iyo filimada kale.

Tignoolajiyada CVD (1)

 

Astaamaha:


▪ Heerkulka habka: inta badan inta u dhaxaysa 500 ~ 900 ° C, heerkulku habsocodku aad buu u sarreeyaa;
Cadaadiska gaaska kala duwan: deegaanka cadaadis hooseeya ee 0.1 ~ 10 Torr;
▪ Tayada filimka: tayo sare leh, lebis wanaagsan, cufnaan wanaagsan, iyo cillado yar;
Heerka dhigaalka: heerka dhigaalka oo gaabis ah;
Midaysan: ku habboon substrate-ka weyn, dhigaalka lebbiska;

Faa'iidooyinka iyo khasaaraha:


▪ Dhigi kara filimaan cufan oo isku mid ah;
Si fiican u qabata substrate-ka weyn, oo ku habboon wax soo saarka tirada badan;
▪ Qiimo jaban;
Heerkulka sare, oo aan ku habboonayn qalabka xasaasiga ah;
▪ Heerka dhigaalku wuu gaabiyaa wax-soo-saarkuna wuu hooseeyaa.

 

2. PECVD (CvD La Wanaajiyey Plasma)

Mabda'a: Isticmaal balaasmaha si aad u dhaqaajiso falcelinta wajiga gaaska heerkul hoose, ionize oo kala jajabiso molecules gaaska falcelinta, ka dibna ku rid aflaanta khafiifka ah dusha sare ee substrate. Tamarta balasmaha waxay si weyn u dhimi kartaa heerkulka looga baahan yahay falcelinta, waxayna leedahay codsiyo kala duwan. Filimaan bir ah oo kala duwan, filimaan aan organic ahayn iyo filimaan dabiici ah ayaa la diyaarin karaa.

Tignoolajiyada CVD (3)

 

Astaamaha:


Heerkulka habka: inta badan inta u dhaxaysa 200 ~ 400 ° C, heerkulku aad buu u hooseeyaa;
Cadaadiska gaaska kala duwan: badiyaa boqollaal mTorr ilaa dhowr Torr;
Tayada filimka: inkasta oo isku-duubnida filimku fiican yahay, cufnaanta iyo tayada filimku uma fiicna sida LPCVD sababtoo ah cilladaha laga yaabo in lagu keeno balasmaha;
Heerka dhigista: heerka sare, wax soo saarka sare;
Midaysan: wax yar ka hooseeya LPCVD oo ku yaal substrate-ka weyn;

 

Faa'iidooyinka iyo khasaaraha:


Filimada khafiifka ah waxaa lagu kaydin karaa heerkul hoose, oo ku habboon walxaha kulaylka xasaasiga ah;
Xawaaraha dhigista degdega ah, ku haboon wax soo saarka hufan;
Habka dabacsan, guryaha filimka waxaa lagu xakameyn karaa iyadoo la hagaajinayo cabbirrada balaasmaha;
Plasma waxaa laga yaabaa inay soo bandhigto cilladaha filimada sida fiiqan ama qaab-la'aanta;
Marka la barbardhigo LPCVD, cufnaanta filimku iyo tayada ayaa xoogaa ka sii daran.

3. HDP-CVD (CVD Plasma Cufnaanta Sare)

Mabda'a: Farsamo gaar ah oo PECVD ah. HDP-CVD (sidoo kale loo yaqaan ICP-CVD) waxay soo saari kartaa cufnaanta balaasmaha iyo tayada sare marka loo eego qalabka PECVD ee caadiga ah ee heerkulka kaydinta hoose. Intaa waxaa dheer, HDP-CVD waxay bixisaa qulqulka ion madax-bannaan oo ku dhawaad ​​​​iyo kontoroolka tamarta, hagaajinta qulqulka ama awoodaha buuxinta daloolka ee dalabka dhigaalka filimka, sida daaha ka-hortagga ka-hortagga, kaydinta walxaha joogtada ah ee dielectric hoose, iwm.

Tignoolajiyada CVD (2)

 

Astaamaha:


▪ Heerkulka habka: heerkulka qolka ilaa 300℃, heerkulku aad buu u hooseeyaa;
Cadaadiska gaaska kala duwan: inta u dhaxaysa 1 iyo 100 mTorr, ka hooseeya PECVD;
▪ Tayada filimka: cufnaanta balaasmaha sare, tayada filimada, lebiska wanaagsan;
Heerka dhigaalka: heerka dhigaalka wuxuu u dhexeeyaa LPCVD iyo PECVD, waxyar ayuu ka sarreeyaa LPCVD;
Isku-duubni: sababtoo ah balaasmaha cufnaanta sare leh, lebbiska filimku waa mid aad u fiican, oo ku habboon dusha sare ee qaabaysan;

 

Faa'iidooyinka iyo khasaaraha:


Awood u leh in lagu xareeyo filimo tayo sare leh heerkul hoose, oo aad ugu habboon qalabka xasaasiga ah;
Isku-duubnida filimka oo aad u wanaagsan, cufnaanta iyo simanaanta dusha sare;
Cufnaanta balaasmaha sare waxay wanaajisaa labbiska dhigaalka iyo sifooyinka filimada;
▪ Qalab adag iyo kharash sare;
Xawaaraha dhigista waa mid gaabis ah, tamarta balaasmaha oo sareysana waxa ay keeni kartaa dhaawac yar.

 

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