Habka kobaca kristal ee Silicon carbide iyo tignoolajiyada qalabka

1. Jidka tignoolajiyada koritaanka crystal SiC

PVT (hab hoos u dhigista),

HTCVD (CVD heerkulka sare),

LPE(Qaabka wajiga dareeraha)

waa saddex caan ahSiC crystalhababka koritaanka;

Habka ugu caansan ee warshadaha waa habka PVT, iyo in ka badan 95% ee SiC hal kiristaalo ayaa lagu koray habka PVT;

WarshadayntaSiC crystalfoornada koritaanka waxay isticmaashaa jidka tignoolajiyada ee PVT ee warshadaha.

2. Habka korriinka ee SiC crystal

Isku-dubaridka budada-daawaynta abuurka crystal-koritaanka crystal-goynta-waferfarsamaynta.

3. Habka PVT si ay u koraanSiC crystals

Walaxda cayriin ee SiC waxa la dhigayaa xagga hoose ee graphite crucible, iyo crystal abuurka SiC waxa uu ku yaalaa xagga sare ee garaafyada crucible. Marka la hagaajiyo dahaarka, heerkulka alaabta ceeriin ee SiC waa ka sarreeyaa heerkulka abuurkuna wuu hooseeyaa. Alaabta ceeriin ee SiC ee heerkulkeedu sarreeyo ayaa hoos u dhigta oo u jajabisa walxaha wajiga gaaska, kuwaas oo loo raro abuurka abuurka leh heerkul hoose iyo crystallize si ay u sameeyaan kiristaalo SiC. Geedi socodka kobaca aasaasiga ah waxaa ka mid ah saddex hannaan: Burburinta iyo sublimation ee alaabta ceeriin, wareejin ballaaran, iyo crystallization on crystals abuurka.

Burburinta iyo hoos u dhigida alaabta ceeriin:

SiC(S)= Si(g)+C(S)

2SiC(S)= Si(g)+ SiC2(g)

2SiC(S)=C(S)+SiC2(g)

Inta lagu guda jiro wareejinta tirada badan, Si uumiga wuxuu si dheeraad ah uga falceliyaa gidaarka graphite crucible si uu u sameeyo SiC2 iyo Si2C:

Si(g)+2C(S) =SiC2(g)

2Si(g) +C(S)=Si2C(g)

Dusha sare ee crystal abuurka, saddexda weji ee gaasku waxay ku koraan labada nooc ee soo socda si ay u abuuraan crystals carbide silicon:

SiC2_(g)+Si2C_(g)=3SiC_(-yada)

Si_(g)+SiC2_(g)=2SiC_(S)

4. Habka PVT si ay u koraan SiC crystal qalabka korriinka wadada technology

Waqtigan xaadirka ah, kuleyliyaha induction waa dariiqa tignoolajiyada caadiga ah ee habka PVT SiC foornooyinka koritaanka crystal;

Diiqada induction kululaynta dibadda iyo kulaylka caabbinta graphite waa jihada horumarineed eeSiC crystalfoornooyinka koritaanka.

5. 8-inji foornada koritaanka kulaylinta SiC

(1) Kuleylintagraphite crucible walxaha kululayntaiyada oo loo marayo soo-gelinta goobta magnetic; habaynta goobta heerkulka iyadoo la hagaajinayo awooda kuleylka, booska gariiradda, iyo qaab dhismeedka dahaarka;

(2) Kuleylinta graphite crucible iyada oo loo marayo kulaylka caabbinta garaafka iyo shucaaca kulaylka; xakamaynta goobta heerkulka adoo hagaajinaya hadda kuleyliyaha garaafka, qaabka kuleyliyaha, iyo kantaroolka hadda aagga;