SiC Coated Graphite Carriers, sic coating, SiC coating coated of Graphite substrate for Semiconductor

Silicon carbide yakavharwagraphite dhisiki ndeyekugadzirira silicon carbide inodzivirira layer pamusoro pegirafu nemuviri kana kemikari mhute deposition uye kupfapfaidza. Iyo yakagadziridzwa silicon carbide inodzivirira layer inogona kusungirirwa zvakasimba kune graphite matrix, ichiita pamusoro peiyo graphite base dense uye isina voids, ichipa iyo graphite matrix yakakosha zvivakwa, zvinosanganisira oxidation kuramba, asidhi uye alkali kuramba, kukukurwa kwevhu, kusagadzikana kwekuora, etc. Parizvino, Gan coating ndechimwe chezvakanakisa core zvikamu zve epitaxial kukura kwesilicon carbide.

Silicon carbide semiconductor ndicho chinhu chepakati cheiyo ichangobva kugadzirwa yakakura bhendi gap semiconductor. Midziyo yaro ine hunhu hwekupikisa kwekushisa kwepamusoro, kupikisa kwemagetsi, kukwirisa frequency, simba rakakura uye neradiation resistance. Iine zvakanakira kukurumidza kushandura kukurumidza uye kushanda kwakanyanya. Inogona kuderedza zvakanyanya kushandiswa kwesimba rechigadzirwa, kuvandudza simba rekushandura simba uye kuderedza chigadzirwa. Inonyanya kushandiswa mukukurukurirana kwe5g, kudzivirira kwenyika uye indasitiri yemauto Iyo RF ndima inomiririrwa neaerospace uye simba remagetsi munda unomiririrwa nemotokari nyowani dzemagetsi uye "zvivakwa zvitsva" zvine akajeka uye akakura tarisiro yemusika mune zvese zvehurumende nemauto.

Silicon carbide substrate ndiyo yakakosha zvinhu zveiyo ichangobva kugadzirwa yakakura bhendi gap semiconductor. Silicon carbide substrate inonyanya kushandiswa mune microwave zvemagetsi, magetsi emagetsi uye mamwe minda. Iri kumucheto kumucheto kwehupamhi bhendi gap semiconductor indasitiri cheni uye ndiyo yekucheka-kumucheto uye yakakosha yakakosha kiyi zvinhu.Silicon carbide substrate inogona kukamurwa kuita marudzi maviri: semi insulating uye conductive. Pakati pavo, semi insulating silicon carbide substrate ine yakakwirira resistivity (resistivity ≥ 105 Ω· cm). Semi insulating substrate yakasanganiswa neheterogeneous gallium nitride epitaxial sheet inogona kushandiswa semidziyo yeRF zvishandiso, iyo inonyanya kushandiswa mukukurukurirana kwe5g, kudzivirira kwenyika uye indasitiri yemauto mune zviri pamusoro apa; Imwe yacho ndeye conductive silicon carbide substrate ine yakaderera resistivity (resistivity renji iri 15 ~ 30m Ω· cm). Iyo homogeneous epitaxy ye conductive silicon carbide substrate uye silicon carbide inogona kushandiswa semidziyo yemagetsi emagetsi. Mamiriro makuru ekushandisa imotokari dzemagetsi, masisitimu emagetsi uye mamwe minda