Nzira itsva yekubatanidza zvidimbu zve semiconductors zvitete sema nanometers zvishoma zvakakonzera kwete kungowanikwa kwesayenzi asiwo rudzi rutsva rwe transistor yezvigadzirwa zvemagetsi zvine simba guru. Mhedzisiro yacho, yakaburitswa muApplied Physics Letters, yamutsa kufarira kukuru.
Kubudirira uku kwakakonzerwa nekubatana kwepedyo pakati pevasayendisiti paLinköping University neSweGaN, kambani inotenderera kubva kuongororo yesainzi kuLiU. Iyo kambani inogadzira zvakagadzirirwa zvemagetsi zvikamu kubva kune gallium nitride.
Gallium nitride, GaN, inonzi semiconductor inoshandiswa pakugadzirisa chiedza-emitting diodes. Iyo inogona, zvisinei, zvakare inobatsira mune mamwe maapplication, senge transistors, sezvo ichikwanisa kumira tembiricha yakakwira uye simba razvino kupfuura mamwe akawanda semiconductors. Izvi zvakakosha zvivakwa zvenguva yemberi yemagetsi zvikamu, kwete zvishoma kune izvo zvinoshandiswa mumotokari dzemagetsi.
Gallium nitride vapor inotenderwa kunyura pane chimedu chesilicon carbide, ichigadzira jira rakatetepa. Nzira iyo imwe crystalline zvinhu inokura pane substrate yeimwe inozivikanwa se "epitaxy." Iyo nzira inowanzo shandiswa muindasitiri yesemiconductor sezvo ichipa rusununguko rwakakura mukuona ese ari maviri ekristaro chimiro uye makemikari emu nanometer firimu akaumbwa.
Iko kusanganiswa kwegallium nitride, GaN, uye silicon carbide, SiC (zvose zvinogona kumira zvakasimba minda yemagetsi), inovimbisa kuti matunhu akakodzera kushandiswa umo masimba makuru anodiwa.
Iko kukwana kwepamusoro pakati pezvinhu zviviri zvecrystalline, gallium nitride uye silicon carbide, zvisinei, hazvina kunaka. Maatomu anopedzisira asisawirirane, izvo zvinotungamira mukukundikana kweiyo transistor. Izvi zvakagadziriswa nekutsvagisa, izvo zvakazoita kuti pave nemhinduro yekutengeserana, umo kunyange yakatetepa layer yealuminium nitride yakaiswa pakati pematanho maviri.
Mainjiniya kuSweGaN vakangoerekana vaona kuti ma transistors avo aikwanisa kubata nemasimba emumunda akakwira zvakanyanya kupfuura zvavaitarisira, uye havana kutanga vanzwisisa chikonzero. Mhinduro inogona kuwanikwa padanho reatomu - mune akati wandei akakosha epakati penzvimbo mukati mezvikamu.
Vatsvagiri veLiU neSweGaN, vachitungamirwa naLiU's Lars Hultman naJun Lu, varipo muApplied Physics Letters tsananguro yechiitiko ichi, uye vanotsanangura nzira yekugadzira ma transistors ane hunyanzvi hwakatokura hwekumira ma voltages akakwira.
Masayendisiti akawana yaimbozivikanwa epitaxial kukura nzira yavakatumidza "transmorphic epitaxial kukura." Zvinokonzera kuti kudhonzwana kuri pakati pezvikamu zvakasiyana kunyurwe zvishoma nezvishoma pazvikamu zviviri zvemaatomu. Izvi zvinoreva kuti vanogona kukura iwo maviri akaturikidzana, gallium nitride uye aruminiyamu nitride, pasilicon carbide nenzira kuitira kuti vadzore padanho reatomu kuti zvidimbu zvine hukama sei kune chimwe nechimwe muzvinyorwa. Murabhoritari vakaratidza kuti zvinhu zvinomira nepamusoro-soro, kusvika ku1800 V. Kana magetsi akadaro akaiswa mhiri kwechikamu chekare chesilicon-based, sparks dzaizotanga kubhururuka uye transistor yaizoparadzwa.
“Tinokorokotedza veSweGaN pavanotanga kutengesa chigadzirwa ichi. Inoratidza kubatana kwakanaka uye kushandiswa kwemhedzisiro yekutsvaga munharaunda. Nekuda kwehukama hwepedyo hwatinahwo nevamwe vedu vekare vava kushandira kambani iyi, tsvakiridzo yedu inokurumidza kuita shanduko kunze kwenyika yezvidzidzo, "anodaro Lars Hultman.
Zvishandiso zvinopihwa neLinköping University. Yekutanga yakanyorwa naMonica Westman Svenselius. Cherechedzo: Zviri mukati zvinogona kugadziridzwa sechimiro uye kureba.
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Nguva yekutumira: May-11-2020