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Sezvo maitiro ekugadzira semiconductor achienderera mberi nekubudirira, chirevo chine mukurumbira chinonzi "Moore's Law" chave kutenderera muindasitiri iyi. Yakakurudzirwa naGordon Moore, mumwe wevatangi veIntel, muna 1965. Chinyorwa chayo chikuru ndeichi: nhamba ye transistors inogona kugariswa pamusangano wakabatanidzwa ichapeta kaviri inenge yose 18 kusvika kumwedzi ye24. Mutemo uyu hausi kungoongorora uye kufanotaura kwemaitiro ekusimudzira indasitiri, asiwo simba rekufambisa kwekuvandudzwa kwemaitiro ekugadzira semiconductor - zvese ndezvekuita transistors nehukuru hudiki uye yakagadzikana kuita. Kubva kuma1950 kusvika parizvino, angangoita makore makumi manomwe, huwandu hweBJT, MOSFET, CMOS, DMOS, uye hybrid BiCMOS uye BCD process tekinoroji dzakagadzirwa.
1. BJT
Bipolar junction transistor (BJT), inowanzonzi triode. Kuyerera kwechaji mu transistor kunonyanya kukonzerwa nekupararira uye kukukurwa kwekufamba kwevatakuri paPN junction. Sezvo ichibatanidza kufamba kwezvose maerekitironi nemaburi, inonzi bipolar device.
Ndichitarira shure kunhoroondo yekuzvarwa kwayo. Nekuda kwepfungwa yekutsiva vacuum triodes nemaamplifiers akasimba, Shockley akaronga kuita tsvakiridzo yekutanga pamasemiconductors muzhizha ra1945. Muhafu yechipiri ya1945, Bell Labs yakagadzira yakasimba-state physics boka rekutsvaga rinotungamirwa naShockley. Muboka iri, mune kwete chete mafizikisi, asiwo ematunhu mainjiniya uye chemist, kusanganisira Bardeen, theoretical physicist, uye Brattain, anoedza fizikisi. Muna Zvita 1947, chiitiko chainzi chiitiko chakakosha nezvizvarwa zvakazotevera chakaitika zvine hungwaru - Bardeen naBrattain vakabudirira kugadzira yekutanga germanium point-contact transistor ine kusimudzira kwazvino.
Bardeen naBrattain's first point-contact transistor
Nguva pfupi yapfuura, Shockley akagadzira bipolar junction transistor muna 1948. Akataura kuti transistor inogona kuumbwa netwo pn junctions, imwe inorerekera mberi uye imwe yakarerekera divi yakarerekera, uye akawana patent muna Chikumi 1948. Muna 1949, akaburitsa dzidziso yakadzama yekushanda kwejunction transistor. Anopfuura makore maviri gare gare, masayendisiti uye mainjiniya kuBell Labs vakagadzira nzira yekuzadzisa kugadzirwa kwakawanda kwemajunction transistors (nhanho muna 1951), vachivhura nguva nyowani yehunyanzvi hwemagetsi. Mukucherechedza mipiro yavo mukugadzirwa kwema transistors, Shockley, Bardeen naBrattain vakabatana vakahwina mubairo weNobel weFizikisiki muna 1956.
Rakareruka dhizaini yeNPN bipolar junction transistor
Nezve chimiro chebipolar junction transistors, maBJT akajairika iNPN nePNP. Chimiro chemukati chakadzama chinoratidzwa mumufananidzo uri pasi apa. Kusachena semiconductor dunhu rinoenderana emitter ndiyo emitter nharaunda, iyo ine yakakwira doping concentration; iyo yekusachena semiconductor dunhu inoenderana nechigadziko inzvimbo yepasi, ine hupamhi hwakatetepa kwazvo uye yakaderera doping concentration; iyo yekusachena semiconductor dunhu inoenderana nemuunganidzi inzvimbo yekuunganidza, ine nzvimbo yakakura uye yakaderera doping concentration.
Zvakanakira zveBJT tekinoroji ndeyekumhanya kwekupindura, yakakwira transconductance (input voltage shanduko inoenderana nehombe inobuda shanduko yemazuva ano), ruzha rushoma, kukwirira kweanalogi, uye simba razvino rekutyaira; izvo zvisingabatsiri ndezvekubatanidzwa kwakaderera (kudzika kwakadzika hakugone kuderedzwa ne lateral size) uye kushandiswa kwesimba guru.
2. MOS
Metal Oxide Semiconductor Field Effect Transistor (Metal Oxide Semiconductor FET), kureva kuti, transistor yemunda inodzora shanduko ye semiconductor (S) conductive chiteshi nekuisa voltage kugedhi resimbi layer (M-metal aluminium) uye tsime kuburikidza neiyo oxide layer (O-insulating layer SiO2) kugadzira mhedzisiro yemunda wemagetsi. Sezvo gedhi uye sosi, uye gedhi uye dhiraini zvakaparadzaniswa neSiO2 insulating layer, MOSFET inonzi zvakare insulated gedhi remunda maitiro transistor. Muna 1962, Bell Labs yakazivisa zviri pamutemo budiriro yakabudirira, iyo yakava imwe yeakanyanya kukosha munhoroondo ye semiconductor budiriro uye yakananga akaisa hwaro hwehunyanzvi hwekuuya kwe semiconductor memory.
MOSFET inogona kukamurwa kuita P chiteshi uye N chiteshi zvinoenderana neiyo conductive chiteshi mhando. Zvinoenderana negedhi voltage amplitude, inogona kukamurwa kuva: depletion type-apo gedhi voltage iri zero, pane conductive chiteshi pakati pekudonhedza uye kunobva; yekusimudzira mhando-yeN (P) chiteshi dhizaini, pane conductive chiteshi chete kana gedhi remagetsi rakakura kupfuura (risingasviki) zero, uye simba MOSFET inonyanya kuita N chiteshi chekusimudzira.
Misiyano mikuru pakati peMOS netriode inosanganisira asi haina kugumira kune anotevera mapoinzi:
-Triodes zvigadziriso zvebipolar nekuti vatakuri vazhinji uye vashoma vanotora chikamu mukuitisa panguva imwe chete; nepo MOS ichingoitisa magetsi kuburikidza nevatakuri vazhinji mumasemiconductors, uye inonziwo unipolar transistor.
-Triodes zvishandiso zvino-zvinodzorwa zvine simba rakanyanya kushandiswa; nepo maMOSFET ari midziyo inodzorwa nevoltage ine yakaderera simba rekushandisa.
-Triodes ane hombe pa-resistance, nepo MOS machubhu ane diki pa-resistance, mazana mashoma emamiriyoni chete. Mumidziyo yemagetsi yazvino, machubhu eMOS anowanzo shandiswa sekuchinja, kunyanya nekuti kushanda kweMOS kwakakwira zvakanyanya kana zvichienzaniswa netatu.
-Triodes ane mari inobatsira, uye MOS machubhu anodhura.
-Mazuvano, MOS machubhu anoshandiswa kutsiva matatu muzviitiko zvakawanda. Chete mune mamwe mashoma-simba kana masimba-asinganzwisisi mamiriro, isu tichashandisa matatu matatu tichifunga nezve mutengo mukana.
3. CMOS
Complementary Metal Oxide Semiconductor: CMOS tekinoroji inoshandisa inopindirana p-mhando uye n-mhando yesimbi oxide semiconductor transistors (MOSFETs) kuvaka midziyo yemagetsi uye logic maseketi. Iyi inotevera nhamba inoratidza yakajairika CMOS inverter, iyo inoshandiswa ku "1→ 0" kana "0→1" shanduko.
Iyi inotevera nhamba ndeye yakajairika CMOS muchinjiko-chikamu. Rutivi rworuboshwe iNMS, uye rutivi rworudyi iPMOS. Mapango eG eMOS maviri akabatanidzwa pamwechete seyakajairika gedhi rekupinda, uye D mapango akabatanidzwa pamwechete seyakajairwa kubuda. VDD yakabatana kune kunobva PMOS, uye VSS yakabatana kune kunobva NMOS.
Muna 1963, Wanlass naSah weFairchild Semiconductor vakagadzira dunhu reCMOS. Muna 1968, American Radio Corporation (RCA) yakagadzira yekutanga CMOS yakabatanidzwa yedunhu chigadzirwa, uye kubva ipapo, dunhu reCMOS rakawana budiriro huru. Zvakanakira kushandiswa kwesimba shoma uye kubatanidzwa kwepamusoro (STI / LOCOS maitiro anogona kuwedzera kuvandudza kubatanidzwa); kuipa kwayo kuvepo kwekukiya mhedzisiro (PN junction reverse bias inoshandiswa sekuzviparadzanisa pakati peMOS machubhu, uye kupindira kunogona kugadzira loop yakagadziridzwa uye kupisa dunhu).
4. DMOS
Kaviri-Diffused Metal Oxide Semiconductor: Zvakafanana nechimiro cheyakajairwa MOSFET zvishandiso, ine zvakare sosi, dhizaini, gedhi uye mamwe maelectrode, asi kuparara kwemagetsi ekupera kwemvura kwakakwira. Kaviri diffusion process inoshandiswa.
Mufananidzo uri pazasi unoratidza muchinjiko-chikamu cheyakajairwa N-chiteshi DMOS. Iyi mhando yeDMOS mudziyo inowanzo shandiswa mune yakaderera-side switching application, uko kunobva MOSFET kwakabatana pasi. Mukuwedzera, kune P-channel DMOS. Iri rudzi rwechishandiso cheDMOS chinowanzo shandiswa mune yakakwira-side switching application, uko kunobva MOSFET kwakabatana kune yakanaka voltage. Zvakafanana neCMOS, zvigadziriso zveDMOS zvinoshandisa N-channel uye P-channel MOSFETs pane imwechete chip kuti ipe anowirirana ekuchinja mabasa.
Zvichienderana negwara rechiteshi, DMOS inogona kukamurwa kuita marudzi maviri, anoti vertical-diffused metal oxide semiconductor field effect transistor VDMOS (Vertical Double-Diffused MOSFET) uye lateral kaviri-diffused metal oxide semiconductor field effect transistor LDMOS (Lateral Double. -Diffused MOSFET).
VDMOS midziyo yakagadzirwa ine yakatwasuka chiteshi. Zvichienzaniswa neanotevera DMOS madivayiri, iwo ane yakakwira breakdown voltage uye azvino ekubata masimba, asi iyo-kupikisa ichiri yakakura.
LDMOS zvishandiso zvakagadzirwa zvine lateral chiteshi uye asymmetric simba MOSFET zvishandiso. Zvichienzaniswa neakamira DMOS zvishandiso, ivo vanobvumira kudzika-kupikisa uye nekukurumidza kushandura kumhanya.
Kana ichienzaniswa neyechinyakare MOSFETs, DMOS ine yakakwirira-pa-capacitance uye yakaderera kuramba, saka inoshandiswa zvakanyanya mumagetsi emagetsi emagetsi akadai sema switch emagetsi, maturusi emagetsi uye madhiraivha emotokari yemagetsi.
5. BiCMOS
Bipolar CMOS tekinoroji inobatanidza CMOS uye bipolar zvishandiso pane imwechete chip panguva imwe chete. Zano rayo rekutanga kushandisa CMOS zvishandiso seyakanyanya yuniti yedunhu, uye kuwedzera bipolar zvishandiso kana maseketi uko hombe capacitive mitoro inodiwa kuti ifambiswe. Naizvozvo, maseketi eBiCMOS ane zvakanakira kubatana kwepamusoro uye kuderera kwesimba rekushandisa kwemaseketi eCMOS, uye zvakanakira zvekumhanya zvakanyanya uye simba razvino rekutyaira remaseketi eBJT.
STMicroelectronics 'BiCMOS SiGe (silicon germanium) tekinoroji inobatanidza RF, analog uye zvikamu zvedhijitari pane imwe chip, iyo inogona kuderedza zvakanyanya huwandu hwekunze kwezvikamu uye kukwidziridza mashandisiro emagetsi.
6. BCD
Bipolar-CMOS-DMOS, tekinoroji iyi inogona kugadzira bipolar, CMOS uye DMOS zvishandiso pane imwechete chip, inonzi BCD process, iyo yakatanga kubudirira kugadzirwa neSTMicroelectronics (ST) muna 1986.
Bipolar inokodzera analog maseketi, CMOS inokodzera dhijitari uye logic maseketi, uye DMOS inokodzera magetsi uye akakwira-voltage zvishandiso. BCD inosanganisa zvakanakira izvo zvitatu. Mushure mekuvandudza kuenderera mberi, BCD inoshandiswa zvakanyanya muzvigadzirwa muminda yesimba manejimendi, analog data kutora uye magetsi actuators. Sekureva kweiyo ST's webhusaiti webhusaiti, maitiro ekukura eBCD achiri kutenderedza zananm, 90nm ichiri mukugadzirwa kweprototype, uye 40nmBCD tekinoroji ndeyayo inotevera-chizvarwa zvigadzirwa zviri kuvandudzwa.
Nguva yekutumira: Sep-10-2024