Ina ia faʻafeiloaʻi le faʻamalieina o loʻo faʻamoemoeina e le au faʻatau, o loʻo i ai la matou auvaa malosi e ofoina atu la matou lagolago sili ona lelei e aofia ai le maketiina, tupe maua, oʻo mai, gaosiga, pulega lelei, faʻapipiʻiina, fale teu oloa ma logistics mo Supply OEM China Excellent Sic Green Silicon Carbide mo Bonded Coated Abrasives, Tulaga maualuga, tautua taimi ma le malosi, e maua uma ai i tatou se taʻutaʻua sili i meafaitino maualuluga e ui lava i tauvaga malosi faavaomalo.
O faʻamanuiaga faʻapitoa o le matou SiC-coated graphite susceptors e aofia ai le mama maualuga, faʻapipiʻi tutusa ma se olaga sili ona lelei. E iai fo'i le maualuga o le kemikolo ma le mautu o le vevela.
SiC coating of Graphite substrate mo Semiconductor talosaga e maua ai se vaega e sili atu le mama ma tetee atu i oxidizing atemosifia.
O le CVD SiC poʻo le CVI SiC o loʻo faʻaogaina i le Graphite o vaega faigofie pe lavelave mamanu. O le ufiufi e mafai ona faʻaoga i le mafiafia eseese ma i vaega tetele.
Vaega:
· Lelei le Tete'e Te'i Te'i
· Sili Fa'aletino Fa'ate'ia Tete'e
· Tete'e Sili Vailaau
· Mamalu Maualuga Maualuga
· Avanoa i Faiga Lavelave
· Faʻaaogaina i lalo ole Oxidizing Atmosphere
Talosaga:
Meatotino masani o mea fa'avae kalafi:
E aliali mai le To'atele: | 1.85 g/cm3 |
Tete'e eletise: | 11 μΩm |
Malosi fa'afoliga: | 49 MPa (500kgf/cm2) |
Maa'a o le matafaga: | 58 |
Lefulefu: | <5ppm |
Amioga vevela: | 116 W/mK (100 kcal/mhr-℃) |
O le kaponi e maua ai susceptors ma vaega kalafi mo reactors epitaxy uma o iai nei. O la matou faila e aofia ai pusa paʻu mo le faʻaaogaina ma le LPE iunite, pancake susceptors mo le LPE, CSD, ma Gemini iunite, ma le tasi-wafer susceptors mo le faʻaaogaina ma le ASM iunite. ofoina le mamanu sili ona lelei mo lau talosaga.