SiC Coating/Coated Graphite Substrate/Tray mo Semiconductor

SiC Coating/Coated Graphite Substrate/Tray mo Ata Fa'aalia Semiconductor

Fa'amatalaga Puupuu:

VET Energy SiC Coated Graphite Susceptor for Epitaxial Growth o se oloa maualuga fa'atinoga ua fuafuaina e maua ai le fa'atinoga tumau ma le fa'atuatuaina i se vaitaimi umi. E sili atu le lelei o le vevela ma le tutusa o le vevela, maualuga le mama, teteʻe o le tafia, ma avea ai ma vaifofo lelei mo le gaosiga o talosaga.

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Fa'amatalaga Oloa

Faailoga o oloa

SiC faʻapipiʻi / faʻapipiʻiina o le susceptor Graphite mo Semiconductor

O leSiC Coated Graphite Substrateo se fofo sili ona umi ma lelei ua fuafuaina e faʻafetaui ai manaʻoga faigata o le semiconductor processing alamanuia. Fa'aalia se vaega o le mama maualugafa'apipi'i carbide silikoni (SiC)., O lenei substrate e tuʻuina atu ai le faʻamautu faʻapitoa o le vevela, faʻamaʻi faʻamaʻi, ma le umi o le auaunaga, ma faʻamalieina mo faʻaoga i faiga MOCVD, graphite wafer carriers, ma isi siosiomaga vevela maualuga.

Vaega:
· Lelei le Tete'e Te'i Te'i
· Sili Fa'aletino Fa'ate'ia Tete'e
· Tete'e Sili Vailaau
· Mamalu Maualuga Maualuga
· Avanoa i Faiga Lavelave
· Faʻaaogaina i lalo ole Oxidizing Atmosphere

Talosaga:

Tulaga Fa'apitoa ma Fa'amanuiaga:

1. Tete'e vevela maualuga:Faatasi ai ma se maualuga-mamaSiC fa'apipi'i, o le substrate e tetee atu i le vevela tele, faʻamautinoa le faʻatinoina o le faʻatinoina i totonu o siosiomaga faigata e pei o le epitaxy ma le semiconductor fabrication.

2. Faʻaleleia le Tumau:O vaega o le graphite ua fa'apipi'i SiC ua mamanuina e tetee atu ai i vaila'au fa'ama'i ma fa'ama'iina, fa'ateleina le ola o le substrate pe a fa'atusatusa i mea fa'apipi'i masani.

3. Vitreous Coated Graphite:Le fausaga tulaga ese vitreous o leSiC fa'apipi'ie maua ai le ma'a'a lelei i luga, fa'aitiitia le ofuina ma le masaesa i le taimi o le fa'aogaina o le vevela.

4. Ufiufi SiC mama maualuga:O a tatou mea'ai e fa'amautinoaina le la'ititi o le fa'aleagaina i faiga ma'ale'ale semiconductor, ofoina atu le fa'amaoni mo alamanuia e mana'omia ai le mama atoatoa o meafaitino.

5. Talosaga Lautele Maketi:O leSiC fa'apipi'i graphite susceptorO lo'o fa'aauau pea ona fa'atupula'ia le maketi a'o fa'atupula'ia le mana'oga mo oloa fa'apipi'i SiC i le gaosiga o semiconductor, fa'atūina lenei mea e fai ma ta'aloga autu i le maketi o lo'o fa'amomoli o le kalafi ma le maketi fata fata fata fa'apipi'i le kafite.

Meatotino masani o mea fa'avae kalafi:

E aliali mai le To'atele:	1.85 g/cm3
Tete'e eletise:	11 μΩm
Malosi fa'afoliga:	49 MPa (500kgf/cm2)
Maa'a o le matafaga:	58
Lefulefu:	<5ppm
Amioga vevela:	116 W/mK (100 kcal/mhr-℃)

CVD SiC薄膜基本物理性能 Meatino fa'aletino autu o le CVD SiCufiufi
性质 / Meatotino	典型数值 / Taua masani
晶体结构 / Fa'a tioata	FCC β phase 多晶，主要为（111）取向
密度 / Density	3.21 g/cm³
硬度 / Malosi	2500 维氏硬度（500g uta）
晶粒大小 / Saito SiZe	2~10μm
纯度 / Vailaau Mama	99.99995%
热容 / Malosiaga vevela	640 J·kg^-1·K^-1
升华温度 / Sulimation Temperature	2700 ℃
抗弯强度 / Malosi Fa'afoliga	415 MPa RT 4-point
杨氏模量 / Young's Modulus	430 Gpa 4pt pi'o, 1300 ℃
导热系数 / Fa'avevela vevela	300W·m^-1·K^-1
热膨胀系数 / Fa'alauteleina o le vevela(CTE)	4.5×10^-6K^-1

O le VET Energy o le gaosiga moni lea o oloa faʻapipiʻi faʻapipiʻi ma carbide silicon ma faʻapipiʻi eseese e pei o le SiC coating, TaC coating, glassy carbon coating, pyrolytic carbon coating, ma isi, e mafai ona tuʻuina atu vaega faʻapitoa mo semiconductor ma photovoltaic alamanuia.

O la matou 'au fa'atekinisi e sau mai fa'alapotopotoga su'esu'e fa'apitonu'u pito i luga, e mafai ona tu'uina atu fa'afitauli fa'apitoa fa'apitoa mo oe.

O lo'o fa'aauau pea ona matou fa'atupuina faiga fa'agasolo e tu'uina atu ai mea e sili atu ona maualuga, ma ua fa'atinoina se tekonolosi pateni fa'apitoa, lea e mafai ona fa'amalosia atili ai le so'otaga i le va o le fa'apipi'i ma le mea fa'apipi'i ma fa'aitiitia ai le fa'ateteleina.

Faʻafeiloaʻi faʻafeiloaʻi oe e asiasi i la matou falegaosimea, seʻi o tatou faia nisi talanoaga!