SiC coating graphite MOCVD Wafer carriers, Graphite Susceptors moSiC Epitaxy,
O le kaponi e sapalai ai susceptors, Susceptors epitaxy graphite, Mea lagolago lagolago, MOCVD Susceptor, SiC Epitaxy, Wafer Susceptors,
O faʻamanuiaga faʻapitoa o le matou SiC-coated graphite susceptors e aofia ai le mama maualuga, faʻapipiʻi tutusa ma se olaga sili ona lelei. E iai fo'i le maualuga o le kemikolo ma le mautu o le vevela.
SiC coating of Graphite substrate mo Semiconductor talosaga e maua ai se vaega e sili atu le mama ma tetee atu i oxidizing atemosifia.
O le CVD SiC poʻo le CVI SiC o loʻo faʻaogaina i le Graphite o vaega faigofie pe lavelave mamanu. O le ufiufi e mafai ona faʻaoga i le mafiafia eseese ma i vaega tetele.
Vaega:
· Lelei le Tete'e Te'i Te'i
· Sili Fa'aletino Fa'ate'ia Tete'e
· Tete'e Sili Vailaau
· Mamalu Maualuga Maualuga
· Avanoa i Faiga Lavelave
· Faʻaaogaina i lalo ole Oxidizing Atmosphere
Talosaga:
Meatotino masani o mea fa'avae kalafi:
E aliali mai le To'atele: | 1.85 g/cm3 |
Tete'e eletise: | 11 μΩm |
Malosi fa'afoliga: | 49 MPa (500kgf/cm2) |
Maa'a o le matafaga: | 58 |
Lefulefu: | <5ppm |
Amioga vevela: | 116 W/mK (100 kcal/mhr-℃) |
O le kaponi e sapalai ai susceptorsma vaega graphite mo reactors epitaxy uma o iai nei. O la matou faila e aofia ai pusa paʻu mo le faʻaaogaina ma le LPE iunite, pancake susceptors mo le LPE, CSD, ma Gemini iunite, ma le tasi-wafer susceptors mo le faʻaaogaina ma le ASM iunite. ofoina le mamanu sili ona lelei mo lau talosaga.