SiC coating graphite MOCVD Wafer carriers, Graphite Susceptors mo SiC Epitaxy

Fa'amatalaga Puupuu:

SiC coating of Graphite substrate mo Semiconductor talosaga e maua ai se vaega e sili atu le mama ma tetee atu i oxidizing atemosifia. O le CVD SiC poʻo le CVI SiC o loʻo faʻaogaina i le Graphite o vaega faigofie pe lavelave mamanu. O le ufiufi e mafai ona faʻaoga i le mafiafia eseese ma i vaega tetele.


  • Nofoaga na afua mai ai:Zhejiang, Saina (Mainland)
  • Numera Fa'ata'ita'i:Numera Fa'ata'ita'i:
  • Fua'iga vaila'au:SiC ua ufiufi graphite
  • Malosi fa'afoliga:470Mpa
  • Fa'avevela vevela:300 W/mK
  • Tulaga lelei:atoatoa
  • Galuega:CVD-SiC
  • Talosaga:Semiconductor/Photovoltaic
  • Malosi:3.21 g/cc
  • Fa'alautelega vevela:4 10-6/K
  • Lefulefu: <5ppm
  • Fa'ata'ita'iga:Avanoa
  • HS Code:6903100000
  • Fa'amatalaga Oloa

    Faailoga o oloa

    SiC coating graphite MOCVD Wafer carriers, Graphite Susceptors moSiC Epitaxy,
    O le kaponi e sapalai ai susceptors, Susceptors epitaxy graphite, Mea lagolago lagolago, MOCVD Susceptor, SiC Epitaxy, Wafer Susceptors,

    Fa'amatalaga o oloa

    O faʻamanuiaga faʻapitoa o le matou SiC-coated graphite susceptors e aofia ai le mama maualuga, faʻapipiʻi tutusa ma se olaga sili ona lelei. E iai fo'i le maualuga o le kemikolo ma le mautu o le vevela.

    SiC coating of Graphite substrate mo Semiconductor talosaga e maua ai se vaega e sili atu le mama ma tetee atu i oxidizing atemosifia.
    O le CVD SiC poʻo le CVI SiC o loʻo faʻaogaina i le Graphite o vaega faigofie pe lavelave mamanu. O le ufiufi e mafai ona faʻaoga i le mafiafia eseese ma i vaega tetele.

    SiC fa'apipi'i/fa'apipi'i MOCVD Susceptor

    Vaega:
    · Lelei le Tete'e Te'i Te'i
    · Sili Fa'aletino Fa'ate'ia Tete'e
    · Tete'e Sili Vailaau
    · Mamalu Maualuga Maualuga
    · Avanoa i Faiga Lavelave
    · Faʻaaogaina i lalo ole Oxidizing Atmosphere

    Talosaga:

    2

     

    Meatotino masani o mea fa'avae kalafi:

    E aliali mai le To'atele: 1.85 g/cm3
    Tete'e eletise: 11 μΩm
    Malosi fa'afoliga: 49 MPa (500kgf/cm2)
    Maa'a o le matafaga: 58
    Lefulefu: <5ppm
    Amioga vevela: 116 W/mK (100 kcal/mhr-℃)

    O le kaponi e sapalai ai susceptorsma vaega graphite mo reactors epitaxy uma o iai nei. O la matou faila e aofia ai pusa paʻu mo le faʻaaogaina ma le LPE iunite, pancake susceptors mo le LPE, CSD, ma Gemini iunite, ma le tasi-wafer susceptors mo le faʻaaogaina ma le ASM iunite. ofoina le mamanu sili ona lelei mo lau talosaga.

     


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