SiC fa'apipi'i fa'apipi'i oSu'ega kalafi mo Semiconductor, fa'apipi'i silikoni carbide,MOCVD Susceptor,
mea fa'apipi'i graphite, Su'ega kalafi mo Semiconductor, MOCVD Susceptor, Silicon Carbide fa'apipi'i,

O faʻamanuiaga faʻapitoa o le matou SiC-coated graphite susceptors e aofia ai le mama maualuga, faʻapipiʻi tutusa ma se olaga sili ona lelei. E iai fo'i le maualuga o le kemikolo ma le mautu o le vevela.

SiC ufiufi oSu'ega kalafi mo Semiconductortalosaga e maua ai se vaega e sili atu le mama ma tetee i oxidizing siosiomaga.
O le CVD SiC poʻo le CVI SiC o loʻo faʻaogaina i le Graphite o vaega faigofie pe lavelave mamanu. O le ufiufi e mafai ona faʻaoga i le mafiafia eseese ma i vaega tetele.

Vaega:
· Lelei le Tete'e Te'i Te'i
· Sili Fa'aletino Fa'ate'ia Tete'e
· Tete'e Sili Vailaau
· Mamalu Maualuga Maualuga
· Avanoa i Faiga Lavelave
· Faʻaaogaina i lalo ole Oxidizing Atmosphere

Meatotino masani o mea fa'avae kalafi:

O le kaponi e maua ai susceptors ma vaega kalafi mo reactors epitaxy uma o iai nei. O la matou faila e aofia ai pusa paʻu mo le faʻaaogaina ma le LPE iunite, pancake susceptors mo le LPE, CSD, ma Gemini iunite, ma le tasi-wafer susceptors mo le faʻaaogaina ma le ASM iunite. ofoina le mamanu sili ona lelei mo lau talosaga.

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