IC Tasi-Crystal Silicon Epitaxy

Fa'amatalaga Puupuu:


  • Nofoaga na afua mai ai:Saina
  • Fauga tioata:FCCβ vaega
  • Malosi:3.21 g/cm;
  • Malosi:2500 Vickers;
  • Tele o Saito:2~10μm;
  • Vailaau mama:99.99995%;
  • Malosiaga vevela:640J·kg-1·K-1;
  • Sulimation vevela:2700 ℃;
  • Malosi Felexural:415 Mpa (RT 4-Point);
  • Young's Modulus :430 Gpa (4pt pi'o, 1300 ℃);
  • Fa'alauteleina o le vevela (CTE):4.5 10-6K-1;
  • Amioga vevela:300(W/MK);
  • Fa'amatalaga Oloa

    Faailoga o oloa

    Fa'amatalaga o oloa

    O la matou kamupani e tuʻuina atu auaunaga faʻapipiʻi SiC e ala i le auala CVD i luga o le graphite, ceramics ma isi mea, ina ia mafai ai e kasa faʻapitoa o loʻo i ai carbon ma silicon ona tali atu i le maualuga o le vevela e maua ai le mama maualuga SiC mole, molelaʻau teuina i luga o mea faʻapipiʻi, fa'atūina le SIC fa'apipi'i puipui.

    Vaega autu:

    1. maualuga le vevela oxidation tetee:

    o loʻo lelei tele le faʻamaʻiina o le faʻamaʻi pe a maualuga le vevela ile 1600 C.

    2. maualuga le mama: faia e vailaau ausa tuu i lalo o le maualuga vevela tulaga chlorination.

    3. Erosion tete'e: maualuga ma'a'a, fa'apipi'i luga, vaega laiti.

    4. Tete'e a'a: acid, alkali, masima ma organic reagents.

    Fa'amatalaga autu o le CVD-SIC Coating

    SiC-CVD Meatotino

    Fauga tioata FCC β vaega
    Malosi g/cm ³ 3.21
    Malosi Vickers maaa 2500
    Tele o Saito μm 2~10
    Vailaau Mama % 99.99995
    Malosiaga vevela J·kg-1 ·K-1 640
    Sulimation Temperature 2700
    Malosi Felexural MPa (RT 4-point) 415
    Young's Modulus Gpa (4pt pi'o, 1300℃) 430
    Fa'alauteleina o le vevela (CTE) 10-6K-1 4.5
    Fa'avevela vevela (W/mK) 300

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