Uburyo bushya butanga tristoriste ikomeye: Gukura kwa epitaxial transmorphic ya AlN nucleation layer kuri SiC substrates kugirango habeho gusenyuka kwinshi kwa tranistoriste ya GaN - ScienceDaily

Uburyo bushya bwo guhuza ibice bya semiconductor yoroheje nka nanometero nkeya ntabwo byatumye habaho kuvumbura siyansi gusa ahubwo byanatangije ubwoko bushya bwa transistor kubikoresho bya elegitoroniki bifite ingufu nyinshi. Ibisubizo, byasohotse mu mabaruwa akoreshwa mu bya fiziki, byakuruye abantu benshi.

Ibyagezweho ni ibisubizo by’ubufatanye bwa hafi hagati y’abahanga bo muri kaminuza ya Linköping na SweGaN, isosiyete ikora ibintu bivuye mu bushakashatsi bwa siyansi y’ibikoresho muri LiU. Isosiyete ikora ibikoresho bya elegitoroniki byabugenewe biva muri nitride ya gallium.

Nitride ya Gallium, GaN, ni semiconductor ikoreshwa muri diode ikora neza. Irashobora, ariko, nanone kuba ingirakamaro mubindi bikorwa, nka tristoriste, kubera ko ishobora kwihanganira ubushyuhe bwinshi nimbaraga zigezweho kurusha izindi semiconductor nyinshi. Ibi nibintu byingenzi kubikoresho bya elegitoroniki bizaza, ntabwo byibuze kubikoresha mumashanyarazi.

Umwuka wa nitride ya Gallium wemerewe guhurira kuri wafer ya karubide ya silicon, ugakora igipande cyoroshye. Uburyo uburyo ibintu bimwe na bimwe bya kristaline bihingwa kuri substrate yundi bizwi nka "epitaxy." Uburyo bukoreshwa kenshi munganda ziciriritse kuko zitanga umudendezo mwinshi muguhitamo imiterere ya kirisiti hamwe nubumara bwa firime ya nanometero yakozwe.

Ihuriro rya nitride ya gallium, GaN, na karubide ya silicon, SiC (byombi bishobora kwihanganira imirima ikomeye yamashanyarazi), iremeza ko imiyoboro ikwiranye nibisabwa imbaraga zikenewe.

Bikwiranye hejuru yububiko bubiri bwa kristaline, nitride ya gallium na karubide ya silicon, ariko, irakennye. Atome zirangira zidahuye, biganisha ku kunanirwa kwa transistor. Ibi byakemuwe nubushakashatsi, byaje kuvamo igisubizo cyubucuruzi, aho hashyizwemo urwego ruto cyane rwa nitride ya aluminium hagati y’ibice byombi.

Ba injeniyeri muri SweGaN babonye kubwamahirwe yuko transistor zabo zishobora guhangana nimbaraga zo murwego rwo hejuru kuruta uko bari babyiteze, kandi ntibabanje kumva impamvu. Igisubizo kirashobora kuboneka kurwego rwa atome - mubice bibiri byingenzi bigereranijwe hagati yibigize.

Abashakashatsi bo muri LiU na SweGaN, bayobowe na Lars Hultman wa LiU na Jun Lu, bari mu gitabo cyitwa Applied Physics Letters ibisobanuro kuri iki kibazo, banasobanura uburyo bwo gukora tristoriste ifite n'ubushobozi bukomeye bwo guhangana n’umuvuduko mwinshi.

Abashakashatsi bavumbuye uburyo bwo gukura bwa epitaxial butamenyekanye mbere bise “imikurire ya transmorphic epitaxial.” Itera umurego hagati yuburyo butandukanye ugenda winjira buhoro buhoro hejuru yibice bibiri bya atome. Ibi bivuze ko bashobora gukura ibice bibiri, nitride ya gallium na nitride ya aluminium, kuri karbide ya silicon muburyo kugirango bagenzure kurwego rwa atome uburyo ibice bifitanye isano hagati yabyo. Muri laboratoire berekanye ko ibikoresho bihanganira ingufu nyinshi, kugeza 1800 V. Niba umuyagankuba nk'uwo washyizwe hejuru ya silikoni ya kera, ibishashi byatangira kuguruka kandi transistor ikarimbuka.

Ati: “Turashimira SweGaN mugihe batangiye gucuruza ibihangano. Yerekana ubufatanye bunoze no gukoresha ibisubizo byubushakashatsi muri societe. Bitewe no kugirana umubano wa hafi na bagenzi bacu bahoze bakorana ubu bakorera iyi sosiyete, ubushakashatsi bwacu bwihuse bugira ingaruka no hanze y’amasomo ”, Lars Hultman.

Ibikoresho byatanzwe na kaminuza ya Linköping. Umwimerere wanditswe na Monica Westman Svenselius. Icyitonderwa: Ibirimo birashobora guhindurwa muburyo n'uburebure.

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