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Mugihe ibikorwa bya semiconductor bigenda bikomeza gutera imbere, amagambo azwi cyane yiswe "Amategeko ya Moore" yagiye akwirakwira mu nganda. Byasabwe na Gordon Moore, umwe mu bashinze Intel, mu 1965. Ibikubiyemo ni: umubare wa tristoriste ushobora kwakirwa ku muyoboro uhuriweho uzikuba hafi hafi buri mezi 18 kugeza 24. Iri tegeko ntirisesengura gusa no guhanura imigendekere yiterambere ryinganda, ahubwo ni nimbaraga ziterambere ryiterambere ryimikorere ya semiconductor - byose ni ugukora transistor ifite ubunini buto kandi bukora neza. Kuva mu myaka ya za 1950 kugeza ubu, imyaka igera kuri 70, hateguwe tekinoroji ya BJT, MOSFET, CMOS, DMOS, hamwe na Hybrid BiCMOS na BCD.
1. BJT
Bipolar ihuza transistor (BJT), bakunze kwita triode. Amashanyarazi atembera muri tristoriste ahanini aterwa no gukwirakwiza no gutembera kwabatwara ku masangano ya PN. Kubera ko irimo urujya n'uruza rwa electroni nu mwobo, byitwa bipolar device.
Dushubije amaso inyuma tukareba amateka yavutse. Kubera igitekerezo cyo gusimbuza trium vacuum na amplificateur zikomeye, Shockley yasabye ko hakorwa ubushakashatsi bwibanze kuri semiconductor mu mpeshyi yo mu 1945. Mu gice cya kabiri cy’umwaka wa 1945, Bell Labs yashinze itsinda ry’ubushakashatsi bukomeye bwa fiziki bwayobowe na Shockley. Muri iri tsinda, ntihariho abahanga mu bya fiziki gusa, ahubwo harimo naba injeniyeri n’umuzunguruko, barimo Bardeen, umuhanga mu bya fiziki, na Brattain, umuhanga mu bya fiziki. Ukuboza 1947, ikintu cyafatwaga nkintambwe yibisekuruza byakurikiyeho cyabaye cyiza - Bardeen na Brattain bahimbye neza transistor ya mbere ya germanium point-contact transistor hamwe na amplificateur ya none.
Bardeen na Brattain ya mbere point-contact transistor
Nyuma yaho gato, Shockley yahimbye transistor ya bipolar ihuza mu 1948.Yasabye ko transistor ishobora kuba igizwe n’imiyoboro ibiri ya pn, imwe ikabogama indi ikabogama, ikabona patenti muri Kamena 1948. Mu 1949, yasohoye inyigisho irambuye. y'akazi ka tristoriste ihuza. Nyuma yimyaka irenga ibiri, abahanga naba injeniyeri muri Bell Labs bakoze inzira yo kugera ku musaruro mwinshi wa transistoriste ihuza (intambwe ikomeye mu 1951), itangiza ibihe bishya byikoranabuhanga rya elegitoroniki. Mu rwego rwo gushimira uruhare rwabo mu guhanga transistor, Shockley, Bardeen na Brattain bafatanije igihembo cyitiriwe Nobel muri 1956.
Igishushanyo cyoroshye cyububiko bwa NPN bipolar ihuza transistor
Kubyerekeye imiterere ya bipolar ihuza transistors, BJT isanzwe ni NPN na PNP. Imiterere y'imbere irambuye irerekanwa mumashusho hepfo. Agace ka semiconductor kanduye gahuye na emitter ni akarere ka emitter, gafite doping nyinshi; akarere ka semiconductor gahumanye gahuye nifatiro nakarere shingiro, gafite ubugari buto cyane hamwe na doping nkeya cyane; akarere ka semiconductor kanduye gahuye nuwakusanyije ni agace kegeranya, gafite ahantu hanini hamwe na doping nkeya cyane.
Ibyiza bya tekinoroji ya BJT ni umuvuduko mwinshi wo gusubiza, transconductance nyinshi (impinduka zinjira mumashanyarazi zihuye nibisohoka binini bigezweho), urusaku ruke, kugereranya neza, hamwe nubushobozi bukomeye bwo gutwara; ibibi ni uguhuza kwinshi (ubujyakuzimu ntibushobora kugabanuka nubunini bwuruhande) hamwe no gukoresha ingufu nyinshi.
2. MOS
Metal Oxide Semiconductor Field Effect Transistor (Metal Oxide Semiconductor FET), ni ukuvuga, transistor yumurima ugenzura ihinduka ryumuyoboro wa semiconductor (S) ukoresheje voltage kumuryango wicyuma (M-metal aluminium) na the Inkomoko binyuze muri oxyde (O-insulaire ya SiO2) kugirango itange ingaruka zumuriro wamashanyarazi. Kubera ko irembo n'inkomoko, hamwe n'irembo hamwe n'umuyoboro bitandukanijwe na SiO2 ikingira, MOSFET nayo yitwa transistor ya enterineti. Mu 1962, Bell Labs yatangaje ku mugaragaro iterambere ryagenze neza, ryabaye kimwe mu bintu by'ingenzi byabayeho mu mateka y’iterambere rya semiconductor kandi rishyiraho urufatiro rwa tekiniki rwo kwibuka kwa semiconductor.
MOSFET irashobora kugabanywamo umuyoboro wa P na N umuyoboro ukurikije ubwoko bwumuyoboro. Ukurikije amarembo ya voltage amplitude, irashobora kugabanywamo: ubwoko bwa depletion-iyo voltage yumuryango ari zeru, hariho umuyoboro uyobora imiyoboro nisoko; kuzamura ubwoko-kubikoresho bya umuyoboro wa N (P), hariho umuyoboro uyobora gusa iyo voltage yumuryango irenze (munsi ya) zeru, kandi imbaraga MOSFET nubwoko bwa N umuyoboro wizamura.
Itandukaniro nyamukuru hagati ya MOS na triode ririmo ariko ntabwo rigarukira kumpamvu zikurikira:
-Triode ni ibikoresho bya bipolar kuko ubwinshi nabatwara bake bitabira kuyobora icyarimwe; mugihe MOS ikora amashanyarazi gusa binyuze mubatwara benshi muri semiconductor, kandi nanone yitwa transistor unipolar.
-Triode ni ibikoresho bigenzurwa nubu bifite ingufu nyinshi ugereranije; mugihe MOSFETs nibikoresho bigenzurwa na voltage hamwe no gukoresha ingufu nke.
-Triode ifite nini-yo-kurwanya, mugihe MOS tubes ifite bike-birwanya, milioni magana gusa. Mubikoresho byamashanyarazi bigezweho, MOS tubes ikoreshwa muburyo bwo guhinduranya, cyane cyane ko imikorere ya MOS iri hejuru cyane ugereranije na triode.
-Triode ifite igiciro cyiza ugereranije, kandi MOS tubes irazimvye.
-Muri iki gihe, MOS tubes ikoreshwa mugusimbuza triode mubihe byinshi. Gusa muri bike-imbaraga nke cyangwa imbaraga-zitumva ibintu, tuzakoresha triode urebye inyungu yibiciro.
3. CMOS
Icyuma Cyuzuza Cyuma Cyuma Cyuma: Ikoranabuhanga rya CMOS rikoresha p-yuzuzanya p-nubwoko bwa n-icyuma cyitwa oxyde semiconductor transistors (MOSFETs) kugirango yubake ibikoresho bya elegitoronike hamwe na sisitemu ya logique. Igishushanyo gikurikira cyerekana inverteri ya CMOS isanzwe, ikoreshwa muguhindura "1 → 0" cyangwa "0 → 1".
Igishushanyo gikurikira nubusanzwe CMOS yambukiranya. Uruhande rw'ibumoso ni NMS, naho iburyo ni PMOS. G pole ya MOS ebyiri zahujwe hamwe nkumuryango winjira winjira, hamwe na D pole ihujwe hamwe nkibisohoka byamazi. VDD ihujwe ninkomoko ya PMOS, naho VSS ihujwe nisoko ya NMOS.
Mu 1963, Wanlass na Sah bo muri Fairchild Semiconductor bahimbye umuziki wa CMOS. Mu 1968, Radiyo y'Abanyamerika y'Abanyamerika (RCA) yateje imbere ibicuruzwa bya mbere bya CMOS byahujwe, kandi kuva icyo gihe, umuzunguruko wa CMOS umaze kugera ku iterambere rikomeye. Ibyiza byayo ni ugukoresha ingufu nke no kwishyira hamwe (inzira ya STI / LOCOS irashobora kurushaho kunoza kwishyira hamwe); ibibi byayo ni ukubaho kwifunga (PN ihuza reaction bias ikoreshwa nko kwigunga hagati yigituba cya MOS, kandi kwivanga birashobora gukora byoroshye kuzunguruka no gutwika uruziga).
4. DMOS
Double-Diffused Metal Oxide Semiconductor: Bisa nuburyo imiterere yibikoresho bisanzwe bya MOSFET, ifite kandi isoko, imiyoboro, irembo nizindi electrode, ariko voltage yameneka yumurongo wamazi ni mwinshi. Gukwirakwiza kabiri gukoreshwa.
Igishushanyo gikurikira kirerekana ibice byambukiranya bisanzwe N-umuyoboro DMOS. Ubu bwoko bwibikoresho bya DMOS mubusanzwe bikoreshwa muburyo buke bwo guhinduranya porogaramu, aho isoko ya MOSFET ihujwe nubutaka. Mubyongeyeho, hariho P-umuyoboro DMOS. Ubu bwoko bwibikoresho bya DMOS mubusanzwe bikoreshwa murwego rwo hejuru rwo guhinduranya porogaramu, aho isoko ya MOSFET ihujwe na voltage nziza. Bisa na CMOS, ibikoresho byuzuzanya bya DMOS bifashisha N-umuyoboro na P-umuyoboro MOSFETs kuri chip imwe kugirango batange imirimo yo guhinduranya.
Ukurikije icyerekezo cyumuyoboro, DMOS irashobora kugabanywamo muburyo bubiri, aribwo guhagarikwa kabiri-gukwirakwizwa ibyuma bya okiside ya semiconductor yumurima wa transistor VDMOS (Vertical Double-Diffused MOSFET) hamwe na metero ebyiri zikwirakwizwa na oxyde semiconductor field transistor LDMOS (Lateral Double -MOSFET ikoreshwa).
Ibikoresho bya VDMOS byakozwe numuyoboro uhagaze. Ugereranije nibikoresho bya DMOS byegeranye, bifite imbaraga zo gusenyuka hejuru hamwe nubushobozi bwogukora, ariko kurwanywa biracyari binini.
Ibikoresho bya LDMOS byakozwe numuyoboro wuruhande kandi ni imbaraga zidasanzwe MOSFET. Ugereranije nibikoresho bya DMOS bihagaritse, biremera hasi-birwanya kandi byihuta byihuta.
Ugereranije na MOSFETs gakondo, DMOS ifite ubushobozi bwo hejuru kandi ikarwanya imbaraga, bityo ikoreshwa cyane mubikoresho bya elegitoroniki bifite ingufu nyinshi nka moteri, ibikoresho byamashanyarazi hamwe n’ibinyabiziga bikoresha amashanyarazi.
5. BiCMOS
Bipolar CMOS ni tekinoroji ihuza CMOS nibikoresho bya bipolar kuri chip imwe icyarimwe. Igitekerezo cyibanze cyayo ni ugukoresha ibikoresho bya CMOS nkumuzingi nyamukuru wumuzingi, hanyuma ukongeramo ibikoresho bya bipolar cyangwa imizunguruko aho imitwaro minini ya capacitive isabwa gutwara. Kubwibyo, imiyoboro ya BiCMOS ifite ibyiza byo kwishyira hamwe no gukoresha ingufu nkeya za CMOS, hamwe nibyiza byumuvuduko mwinshi hamwe nubushobozi bukomeye bwo gutwara ibinyabiziga bya BJT.
Ikoranabuhanga rya STMicroelectronics 'BiCMOS SiGe (silicon germanium) ihuza RF, igereranya nibice bya digitale kuri chip imwe, ishobora kugabanya cyane umubare wibigize hanze no gukoresha neza ingufu.
6. BCD
Bipolar-CMOS-DMOS, iryo koranabuhanga rishobora gukora ibikoresho bya bipolar, CMOS na DMOS kuri chip imwe, byitwa inzira ya BCD, byatunganijwe neza na STMicroelectronics (ST) mu 1986.
Bipolar ikwiranye nizunguruka zisa, CMOS ikwiranye numuzunguruko wa digitale na logique, naho DMOS ikwiranye nimbaraga nibikoresho bya voltage nyinshi. BCD ikomatanya ibyiza bya bitatu. Nyuma yo gukomeza gutera imbere, BCD ikoreshwa cyane mubicuruzwa mubijyanye no gucunga ingufu, kubona amakuru asa no gukoresha ingufu. Nk’uko urubuga rwemewe rwa ST rubitangaza, inzira ikuze ya BCD iracyari hafi 100nm, 90nm iracyari mu gishushanyo mbonera, kandi 40nmBCD ikoranabuhanga ni iy'ibisekuruza bizaza biri gutezwa imbere.
Igihe cyo kohereza: Nzeri-10-2024