SiC Coated Graphite Halfmoon Partis a kiyichigawo chomwe chimagwiritsidwa ntchito popanga semiconductor, makamaka zida za SiC epitaxial.Timagwiritsa ntchito ukadaulo wathu wapatent kuti tipange nawo theka la mwezikunenepa kwambiri,zabwinozokutirakufananandi moyo wabwino kwambiri wautumiki, komansomkulu mankhwala kukana ndi matenthedwe bata katundu.
Mbiri ya VET Energy ndiwopanga weniweni wa makonda graphite ndi silicon carbide mankhwala ndi CVD zokutira,akhoza kuperekazosiyanasiyanamagawo makonda a semiconductor ndi photovoltaic makampani. OGulu laukadaulo la ur limachokera ku mabungwe apamwamba ofufuza zapakhomo, limatha kupereka mayankho aukadaulozanu.
Timapitiriza kupanga njira zapamwamba kuti tipereke zipangizo zamakono,ndiapanga ukadaulo wapatent wokhazikika, womwe ungapangitse kuti kulumikizana pakati pa zokutira ndi gawo lapansi kukhale kolimba komanso kuti zisasokonezeke.
Fzakudya zathu:
1. Kutentha kwakukulu kwa okosijeni kukana mpaka 1700℃.
2. Kuyeretsedwa kwakukulu ndikutentha kufanana
3. Kukana kwabwino kwa dzimbiri: asidi, alkali, mchere ndi organic reagents.
4. High kuuma, yaying'ono pamwamba, particles zabwino.
5. Moyo wautali wautumiki komanso wokhazikika
| CVD SiC薄膜基本物理性能 Zida zoyambira za CVD SiCzokutira | |
| 性质 / Katundu | 典型数值 / Mtengo Wodziwika |
| 晶体结构 / Kapangidwe ka Crystal | FCC β gawo多晶，主要為（111）取向 |
| 密度 / Kuchulukana | 3.21g/cm³ |
| 硬度 / Kuuma | 2500 维氏硬度 (500g katundu) |
| 晶粒大小 / Mbewu SiZe | 2 ~ 10μm |
| 纯度 / Chemical Purity | 99.99995% |
| 热容 / Kutentha Kwambiri | 640 jkg-1·K-1 |
| 升华温度 / Sublimation Kutentha | 2700 ℃ |
| 抗弯强度 / Flexural Mphamvu | 415 MPa RT 4-mfundo |
| 杨氏模量 / Young's Modulus | 430 Gpa 4pt bend, 1300 ℃ |
| 导热系数 / ThermalConductivity | 300Wm-1·K-1 |
| 热膨胀系数 Kukula kwa Matenthedwe (CTE) | 4.5 × 10-6K-1 |
Takulandirani ndi manja awiri kuti mudzacheze fakitale yathu, tikambiranenso!
