Silicon-based GaN Epitaxy

Kufotokozera Kwachidule:


  • Malo Ochokera:China
  • Kapangidwe ka Crystal:FCCβphase
  • Kachulukidwe:3.21g/cm
  • Kulimba:2500 Vickers
  • Kukula Kwambewu:2 ~ 10μm
  • Chemical Purity:99.99995%
  • Kutentha Kwambiri:640J·kg-1·K-1
  • Kutentha kwa Sublimation:2700 ℃
  • Mphamvu ya Felexural:415 Mpa (RT 4-Point)
  • Young's Modulus:430 Gpa (4pt bend, 1300 ℃)
  • Kukula kwa Thermal (CTE):4.5 10-6K-1
  • Thermal conductivity:300 (W/mK)
  • Tsatanetsatane wa Zamalonda

    Zolemba Zamalonda

    Mafotokozedwe Akatundu

    Kampani yathu imapereka ntchito zokutira za SiC pogwiritsa ntchito njira ya CVD pamtunda wa graphite, zoumba ndi zinthu zina, kotero kuti mpweya wapadera wokhala ndi mpweya ndi silicon umachita pa kutentha kwambiri kuti upeze mamolekyu apamwamba a SiC, mamolekyu oyikidwa pamwamba pa zinthu zokutira, kupanga SIC chitetezo wosanjikiza.

    Zofunikira zazikulu:

    1. Kutentha kwakukulu kwa okosijeni kukana:

    kukana kwa okosijeni kumakhalabe kwabwino kwambiri pamene kutentha kumafika pa 1600 C.

    2. Chiyero chachikulu: chopangidwa ndi kuyika kwa nthunzi wamankhwala pansi pa kutentha kwambiri kwa chlorination.

    3. Kukana kukokoloka kwa nthaka: kuuma kwakukulu, pamwamba, tinthu tating'onoting'ono.

    4. Kukana kwa dzimbiri: asidi, alkali, mchere ndi organic reagents.

    Zofunika Kwambiri za CVD-SIC Coating

    SiC-CVD Properties

    Kapangidwe ka Crystal FCC β gawo
    Kuchulukana g/cm³ 3.21
    Kuuma Vickers kuuma 2500
    Ukulu wa Mbewu μm 2-10
    Chemical Purity % 99.99995
    Kutentha Mphamvu J·kg-1 ·K-1 640
    Kutentha kwa Sublimation 2700
    Felexural Mphamvu MPa (RT 4-point) 415
    Young's Modulus Gpa (4pt bend, 1300 ℃) 430
    Kukula kwa Thermal (CTE) 10-6K-1 4.5
    Thermal conductivity (W/mK) 300

     

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