SiC Coated Graphite Carrier / Susceptor

Kufotokozera Kwachidule:

VET Energy SiC Coated Graphite Carrier/Susceptor ndi chinthu chochita bwino kwambiri chomwe chinapangidwa kuti chizipereka magwiridwe antchito osasinthika komanso odalirika kwa nthawi yayitali. Ili ndi kukana kwabwino kwambiri kwa kutentha komanso kufananizidwa kwamafuta, kuyera kwakukulu, kukana kukokoloka, kupangitsa kuti ikhale yankho labwino kwambiri pakukonza mapulogalamu opaka utoto.

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Tsatanetsatane wa Zamalonda

Zolemba Zamalonda

SiC coated suscetpor ndi gawo lofunikira lomwe limagwiritsidwa ntchito popanga ma semiconductor osiyanasiyana. Timagwiritsa ntchito ukadaulo wathu wapatent kupanga SiC yokutidwa ndi suscetpor yoyera kwambiri, yofananira bwino yoyatira komanso moyo wabwino kwambiri wautumiki, komanso kukana kwamphamvu kwamankhwala komanso kukhazikika kwamafuta.

Zogulitsa zathu:

1. High kutentha makutidwe ndi okosijeni kukana mpaka 1700 ℃.
2. Kuyera kwakukulu ndi kufanana kwa kutentha
3. Kukana kwabwino kwa dzimbiri: asidi, alkali, mchere ndi organic reagents.
4. High kuuma, yaying'ono pamwamba, particles zabwino.
5. Moyo wautali wautumiki komanso wokhazikika

CVD SiC薄膜基本物理性能 Zida zoyambira za CVD SiCzokutira
性质 / Katundu	典型数值 / Mtengo Wodziwika
晶体结构 / Kapangidwe ka Crystal	FCC β gawo多晶，主要為（111）取向
密度 / Kuchulukana	3.21g/cm³
硬度 / Kuuma	2500 维氏硬度 (500g katundu)
晶粒大小 / Mbewu SiZe	2 ~ 10μm
纯度 / Chemical Purity	99.99995%
热容 / Kutentha Kwambiri	640 jkg^-1·K^-1
升华温度 / Sublimation Kutentha	2700 ℃
抗弯强度 / Flexural Mphamvu	415 MPa RT 4-mfundo
杨氏模量 / Young's Modulus	430 Gpa 4pt bend, 1300 ℃
导热系数 / ThermalConductivity	300Wm^-1·K^-1
热膨胀系数 Kukula kwa Matenthedwe (CTE)	4.5 × 10^-6K^-1