SiC coated suscetpor ndi gawo lofunikira lomwe limagwiritsidwa ntchito popanga ma semiconductor osiyanasiyana. Timagwiritsa ntchito ukadaulo wathu wapatent kupanga SiC yokutidwa ndi suscetpor yoyera kwambiri, yofananira bwino yoyatira komanso moyo wabwino kwambiri wautumiki, komanso kukana kwamphamvu kwamankhwala komanso kukhazikika kwamafuta.
Zogulitsa zathu:
1. High kutentha makutidwe ndi okosijeni kukana mpaka 1700 ℃.
2. Kuyera kwakukulu ndi kufanana kwa kutentha
3. Kukana kwabwino kwa dzimbiri: asidi, alkali, mchere ndi organic reagents.
4. High kuuma, yaying'ono pamwamba, particles zabwino.
5. Moyo wautali wautumiki komanso wokhazikika
| CVD SiC薄膜基本物理性能 Zida zoyambira za CVD SiCzokutira | |
| 性质 / Katundu | 典型数值 / Mtengo Wofanana |
| 晶体结构 / Kapangidwe ka Crystal | FCC β gawo多晶，主要為（111）取向 |
| 密度 / Kuchulukana | 3.21g/cm³ |
| 硬度 / Kuuma | 2500 维氏硬度 (500g katundu) |
| 晶粒大小 / Mbewu SiZe | 2 ~ 10μm |
| 纯度 / Chemical Purity | 99.99995% |
| 热容 / Kutentha Kwambiri | 640 jkg-1·K-1 |
| 升华温度 / Sublimation Kutentha | 2700 ℃ |
| 抗弯强度 / Flexural Mphamvu | 415 MPa RT 4-mfundo |
| 杨氏模量 / Young's Modulus | 430 Gpa 4pt bend, 1300 ℃ |
| 导热系数 / ThermalConductivity | 300Wm-1·K-1 |
| 热膨胀系数 Kukula kwa Matenthedwe (CTE) | 4.5 × 10-6K-1 |
Takulandirani ndi manja awiri kuti mudzacheze fakitale yathu, tikambiranenso!
