Ụgbọ mmiri wafer na kọlụm kwụ ọtọ

Nkọwa dị mkpirikpi:

Ụgbọ mmiri Wafer na kọlụm kwụ ọtọ sitere na vet-china na-enye nkwụsi ike na nkenke na njikwa wafer maka nrụpụta semiconductor. Site na imewe elu nke vet-china, sistemu a na-eme ka nkwekọ kacha mma na njide echekwara, na-abawanye arụmọrụ arụmọrụ yana ibelata mmebi wafer.

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Nkọwa ngwaahịa

Mkpado ngwaahịa

vet-china na-ewepụta ihe ọhụrụ Vertical Column Wafer Boat & Pedestal, ihe ngwọta zuru oke maka nhazi semiconductor dị elu. Ewere nkenke nke ọma, usoro njikwa wafer a na-enye nkwụsi ike na nhazi na-enweghị atụ, dị oke mkpa maka gburugburu nrụpụta dị elu.

A na-eji ihe dị oke ọnụ rụọ kọlụm kwụ ọtọ Wafer Boat & Pedestal nke na-ekwe nkwa nkwụsi ike ọkụ na iguzogide corrosion kemịkalụ, na-eme ka ọ dabara maka usoro nrụpụta semiconductor kacha achọ. Nhazi kọlụm kwụ ọtọ ya pụrụ iche na-akwado wafers n'enweghị nsogbu, na-ebelata ihe ize ndụ nke enweghị nkwekọrịta na mmebi nwere ike ime n'oge njem na nhazi.

Site na nchikota nke vet-china's Vertical Column Wafer Boat & Pedestal, ndị na-emepụta semiconductor nwere ike ịtụ anya nrụpụta ka mma, belata obere oge, yana mmụba ngwaahịa. Usoro a dakọtara na ụdị wafer dị iche iche na nhazi, na-enye mgbanwe na scalability maka mkpa mmepụta dị iche iche.

Nkwenye vet-china maka ịdị mma na-eme ka o doo anya na ụgbọ mmiri Wafer & Pedestal nke ọ bụla kwụ ọtọ na-ezute ụkpụrụ kachasị elu nke ịdịmma na arụmọrụ. Site n'ịhọrọ ngwọta dị oke ọnụ a, ị na-etinye ego n'ụzọ ga-egosi ọdịnihu maka njikwa wafer nke na-ebuli arụmọrụ na ntụkwasị obi na nrụpụta semiconductor.

Njirimara nke silicon carbide recrystallized

silicon carbide recrystallized (R-SiC) bụ ihe na-arụ ọrụ dị elu nke nwere ike nke abụọ na diamond, nke a na-etolite na okpomọkụ dị elu karịa 2000 ℃. Ọ na-ejigide ọtụtụ ihe ndị mara mma nke SiC, dị ka ike okpomọkụ dị elu, nguzogide corrosion siri ike, nguzogide oxidation magburu onwe ya, ezigbo nkwụsị ọkụ ọkụ na ihe ndị ọzọ.

● Magburu onwe n'ibu Njirimara. silicon carbide recrystallized nwere ike dị elu na isi ike karịa eriri carbon, mmetụta dị elu na-eguzogide, nwere ike ịrụ ọrụ dị mma na gburugburu okpomọkụ dị oke egwu, nwere ike ịrụ ọrụ counterbalance ka mma n'ọnọdụ dị iche iche. Tụkwasị na nke ahụ, ọ na-enwekwa mgbanwe dị mma na ọ dịghị emebi ngwa ngwa site na ịgbatị na ịgbatị, nke na-eme ka arụmọrụ ya dịkwuo mma.

● Nnukwu nguzogide corrosion. Carbide silicon recrystallized nwere nnukwu ihe mgbochi corrosion na-eguzogide ụdị mgbasa ozi dị iche iche, nwere ike igbochi mmebi nke mgbasa ozi dị iche iche na-emebi emebi, nwere ike ịnọgide na-arụ ọrụ ya ruo ogologo oge, nwee nkwekọ siri ike, ka o wee nwee ogologo ndụ ọrụ. Tụkwasị na nke ahụ, ọ na-enwekwa nkwụsi ike nke okpomọkụ dị mma, nwere ike ime mgbanwe na mgbanwe mgbanwe okpomọkụ, melite mmetụta ngwa ya.

● Ime ihe adịghị ebelata. N'ihi na usoro ihe nkedo adịghị ebelata, ọ dịghị nrụgide fọdụrụnụ ga-eme ka nrụrụ ma ọ bụ mgbawa nke ngwaahịa ahụ, na akụkụ ndị nwere ọdịdị dị mgbagwoju anya na nkenke dị elu nwere ike ịkwadebe.

重结晶碳化硅物理特性 Njirimara anụ ahụ nke Silicon Carbide recrystallized
性质 / Ihe onwunwe	典型数值 / Uru a na-ahụkarị
使用温度/ Okpomọkụ na-arụ ọrụ (°C)	1600C (ya na oxygen), 1700C (mbelata gburugburu ebe obibi)
SiC含量/ SiC ọdịnaya	> 99.96%
自由Si含量/ Free Si ọdịnaya	<0.1%
体积密度/Nnukwu njupụta	2.60-2.70 g / cm³
气孔率/ O doro anya na porosity	<16%
抗压强度/ ike mkpakọ	> 600MPa
常温抗弯强度/Ike na-ehulata oyi	80-90 MPa (20°C)
高温抗弯强度Ike na-ehulata ọkụ	90-100 MPa (1400°C)
热膨胀系数/ Mgbasa ọkụ @1500°C	4.70 10^-6/°C
导热系数/Nrụpụta okpomọkụ @1200°C	23W/m•K
杨氏模量/ Ngbanwe modulu	240 GPA
抗热震性/ Thermal ujo eguzogide	Dị oke mma

VET Energy bụ nkeezigbo onye na-emepụta ngwaahịa graphite na silicon carbide nwere mkpuchi CVD,nwere ike inyedị iche icheakụkụ ahaziri maka semiconductor na fotovoltaic ụlọ ọrụ. Our teknuzu otu si n'elu ụlọ nnyocha ụlọ ọrụ, nwere ike na-enye ndị ọzọ ọkachamara ihe ngwọtamaka gị.

Anyị na-aga n'ihu na-emepụta usoro dị elu iji nye ihe ndị dị elu karị,naarụpụtala nkà na ụzụ nwere ikike pụrụ iche, nke nwere ike ime ka njikọ dị n'etiti mkpuchi na mkpụrụ ahụ sie ike ma ghara ịdị na-apụ apụ.

CVD SiC薄膜基本物理性能 Njirimara anụ ahụ bụ isi nke CVD SiCmkpuchi
性质 / Ihe onwunwe	典型数值 / Uru a na-ahụkarị
晶体结构 / Crystal Structure	FCC β oge多晶，主要为（111) 取向
密度 / Njupụta	3.21g/cm³
硬度 / Isi ike	2500 维氏硬度 (ibu 500g)
晶粒大小 / ọka SiZe	2 ~ 10μm
纯度 / Chemical ịdị ọcha	99.99995%
热容 / Okpomọkụ Ike	640 nk^-1· K^-1
升华温度 / Sublimation okpomọkụ	2700 ℃
抗弯强度 / Ike Flexural	415 MPa RT 4-isi
杨氏模量 Modul nke Young's	430 Gpa 4pt ekwe, 1300 ℃
导热系数 / ThermalOmume omume	300W·m^-1· K^-1
热膨胀系数 Mgbasawanye okpomọkụ (CTE)	4.5 × 10^-6K^-1