Vet-ChinaSilicon Carbide CeramicMkpuchi bụ mkpuchi nchebe na-arụ ọrụ dị elu nke siri ike na-eguzogidesilicon carbide (SiC)ihe onwunwe, nke na-enye ezigbo nguzogide corrosion kemịkalụ na nkwụsi ike dị elu. Njirimara ndị a dị oke mkpa na mmepụta semiconductor, ya mereIhe mkpuchi seramiiki Silicon Carbidea na-ejikarị eme ihe na ihe ndị bụ isi nke ihe nrụpụta semiconductor.
Ọrụ kpọmkwem nke Vet-ChinaSilicon Carbide CeramicIhe mkpuchi na mmepụta semiconductor bụ nke a:
Kwalite ịdịte aka akụrụngwa:Silicon Carbide Ceramic mkpuchi Silicon Carbide Ceramic mkpuchi na-enye nchebe elu dị mma maka ngwa nrụpụta semiconductor na ike ya dị elu ma na-eyi nguzogide. Karịsịa na gburugburu usoro okpomọkụ dị elu na nke na-emebi emebi, dị ka nsị kemịkalụ kemịkalụ (CVD) na etching plasma, mkpuchi ahụ nwere ike igbochi elu nke ngwa ahụ nke ọma site na mbibi kemịkalụ ma ọ bụ iyi anụ ahụ, si otú a na-agbatị ndụ ọrụ nke ọma. akụrụngwa na mbenata downtime mere site ugboro ugboro ndochi na mmezi.
Melite usoro ịdị ọcha:N'ime usoro nrụpụta semiconductor, obere mmetọ nwere ike ibute ntụpọ ngwaahịa. Inertness kemịkalụ nke Silicon Carbide Ceramic mkpuchi na-enye ya ohere ka ọ kwụsie ike n'okpuru ọnọdụ dị oke egwu, na-egbochi ihe ahụ ịhapụ irighiri ihe ma ọ bụ adịghị ọcha, si otú ahụ hụ na ịdị ọcha gburugburu ebe obibi nke usoro ahụ dị. Nke a dị mkpa karịsịa maka usoro nrụpụta nke chọrọ oke nkenke na ịdị ọcha dị elu, dị ka PECVD na ntinye ion.
Welie njikwa ọkụ:Na nhazi semiconductor okpomọkụ dị elu, dị ka nhazi ngwa ngwa ngwa ngwa (RTP) na usoro oxidation, ịdị elu nke thermal conductivity nke Silicon Carbide Ceramic mkpuchi na-enyere aka nkesa otu okpomọkụ n'ime ngwa. Nke a na-enyere aka belata nrụgide okpomọkụ na nrụrụ ihe nke mgbanwe okpomọkụ na-akpata, si otú ahụ na-emeziwanye mmepụta ngwaahịa ngwaahịa ziri ezi na nkwụsi ike.
Kwado gburugburu usoro mgbagwoju anya:N'ime usoro nke chọrọ njikwa ikuku dị mgbagwoju anya, dị ka usoro ICP etching na PSS etching, nkwụsi ike na oxidation resistance nke Silicon Carbide Ceramic Coating hụ na akụrụngwa na-ejigide arụmọrụ kwụsiri ike na arụ ọrụ ogologo oge, na-ebelata ihe ize ndụ nke mmebi ihe ma ọ bụ mmebi akụrụngwa n'ihi. na mgbanwe gburugburu ebe obibi.
CVD SiC薄膜基本物理性能 Njirimara anụ ahụ bụ isi nke CVD SiCmkpuchi | |
性质 / Ihe onwunwe | 典型数值 / Uru a na-ahụkarị |
晶体结构 / Crystal Structure | FCC β oge多晶,主要为(111) 取向 |
密度 / Njupụta | 3.21g/cm³ |
硬度 / Isi ike | 2500 维氏硬度 (ibu 500g) |
晶粒大小 / ọka SiZe | 2 ~ 10μm |
纯度 / Chemical ịdị ọcha | 99.99995% |
热容 / Okpomọkụ Ike | 640 nk-1· K-1 |
升华温度 / Sublimation okpomọkụ | 2700 ℃ |
抗弯强度 / Ike Flexural | 415 MPa RT 4-isi |
杨氏模量 Modul nke Young's | 430 Gpa 4pt ekwe, 1300 ℃ |
导热系数 / ThermalOmume omume | 300W·m-1· K-1 |
热膨胀系数 Mgbasawanye okpomọkụ (CTE) | 4.5 × 10-6K-1 |
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