Cov khoom ntawm recrystallized silicon carbide
Recrystallized silicon carbide (R-SiC) yog cov khoom siv ua haujlwm siab nrog hardness thib ob rau pob zeb diamond, uas yog tsim los ntawm qhov kub siab tshaj 2000 ℃. Nws khaws ntau yam khoom zoo ntawm SiC, xws li kub siab zog, muaj zog corrosion kuj, zoo heev oxidation kuj, zoo thermal shock kuj thiab lwm yam.
● Cov khoom siv kho tshuab zoo heev. Recrystallized silicon carbide muaj lub zog ntau dua thiab nruj dua li cov pa roj carbon fiber ntau, muaj kev cuam tshuam siab, tuaj yeem ua haujlwm zoo hauv qhov kub thiab txias, tuaj yeem ua si qhov kev ua tau zoo dua hauv ntau qhov xwm txheej. Tsis tas li ntawd, nws kuj muaj qhov hloov tau zoo thiab tsis yooj yim puas los ntawm kev ncab thiab khoov, uas ua rau nws ua tau zoo heev.
● High corrosion kuj. Recrystallized silicon carbide muaj kev tiv thaiv corrosion siab rau ntau yam xov xwm, tuaj yeem tiv thaiv kev yaig ntawm ntau yam corrosive media, tuaj yeem tswj nws cov khoom siv rau lub sijhawm ntev, muaj zog adhesion, kom nws muaj lub neej ntev kev pab cuam. Tsis tas li ntawd, nws kuj muaj qhov zoo thermal stability, tuaj yeem hloov kho rau qee qhov kev hloov pauv ntawm qhov kub thiab txias, txhim kho nws daim ntawv thov.
● Sintering tsis ntsws. Vim tias cov txheej txheem sintering tsis ntsws, tsis muaj kev ntxhov siab seem yuav ua rau deformation lossis tawg ntawm cov khoom, thiab cov khoom nrog cov duab nyuaj thiab siab precision tuaj yeem npaj tau.
| 重结晶碳化硅物理特性 Lub cev muaj zog ntawm Recrystalized Silicon Carbide | |
| 性质 / Khoom | 典型数值 / Tus nqi |
| 使用温度/ Ua haujlwm kub (°C) | 1600 ° C (nrog oxygen), 1700 ° C (txo ib puag ncig) |
| SiC含量/ SiC cov ntsiab lus | > 99.96% |
| 自由Si 含量/ Dawb Si cov ntsiab lus | <0.1% |
| 体积密度/Qhov ntom ntom | 2.60-2.70 g / cm33 |
| 气孔率/ Pom porosity | <16% |
| 抗压强度/ Compression zog | > 600MPa |
| 常温抗弯强度/Txias dabtsi yog khoov zog | 80-90 MPa (20 ° C) |
| 高温抗弯强度Kub dabtsi yog khoov zog | 90-100 MPa (1400 ° C) |
| 热膨胀系数/ Thermal expansion @ 1500 ° C | 4.70 10-6/°C |
| 导热系数/Thermal conductivity @ 1200 ° C | 23W/m•K |
| 杨氏模量/ Elastic modulus | 240 GPa |
| 抗热震性/ Thermal shock tsis kam | Zoo heev |
VET Energy yog tustiag tiag chaw tsim tshuaj paus ntawm customized graphite thiab silicon carbide khoom nrog CVD txheej,tuaj yeem muab tauntau yamcustomized qhov chaw rau semiconductor thiab photovoltaic kev lag luam. Our pab neeg ua haujlwm los ntawm cov tsev kawm tshawb fawb sab saum toj, tuaj yeem muab cov kev daws teeb meem zoo tshaj plawsrau koj.
Peb tsis tu ncua tsim cov txheej txheem siab heev los muab cov ntaub ntawv siab dua,thiabtau ua haujlwm tawm cov cuab yeej tshwj xeeb patented, uas tuaj yeem ua rau kev sib txuas ntawm cov txheej thiab cov substrate nruj dua thiab tsis tshua muaj detachment.
| CVD SiC薄膜基本物理性能 Basic Physical Properties ntawm CVD SiCtxheej | |
| 性质 / Khoom | 典型数值 / Tus nqi |
| 晶体结构 / Crystal Structure | FCC β theem多晶, 主要为(111) Ib |
| 密度 / Ceev | 3.21 g / cm³ |
| 硬度 / Hardness | 2500 维氏硬度 (500g load) |
| 晶粒大小 / Grain SiZe | 2 ~ 10 hli |
| 纯度 / Tshuaj Purity | 99.99995% |
| Cov duab / Kub Muaj Peev Xwm | 6 40j kg-1· K-1 |
| 升华温度 / Sublimation kub | 2700 ℃ |
| 抗弯强度 / Flexural zog | 415 MPa RT 4-point |
| 杨氏模量 / Young's Modulus | 430 Gpa 4pt khoov, 1300 ℃ |
| 导热系数 / KublKev coj ua | 300 Wm-1· K-1 |
| 热膨胀系数 / Thermal Expansion (CTE) | 4.5 × 10-6K-1 |
Zoo siab txais tos koj tuaj xyuas peb lub Hoobkas, cia peb tham ntxiv!
