Silicon carbide wafer nkoj yog cov khoom siv thauj khoom rau cov wafers, feem ntau yog siv hauv cov txheej txheem hnub ci thiab semiconductor diffusion. Nws muaj cov yam ntxwv xws li hnav tsis kam, corrosion kuj, kub-kub los tiv thaiv, tsis kam mus rau plasma bombardment, siab kub bearing muaj peev xwm, siab thermal conductivity, siab kub dissipation, thiab siv sij hawm ntev uas tsis yooj yim rau khoov thiab deform. Peb lub tuam txhab siv high-purity silicon carbide khoom los xyuas kom meej lub neej kev pab cuam thiab muab customized designs, nrog rau ntau yam ntsug thiab kab rov tav wafer nkoj.
Cov ntaub ntawv ntaub ntawv
| 材料Khoom siv | R-SiC |
| 使用温度Ua haujlwm kub (°C) | 1600 ° C (氧化气氛Oxidizing ib puag ncig) 1700 ° C (还原气氛 Txo ib puag ncig) |
| SiC 含量SiC cov ntsiab lus (%) | > 99 |
| 自由Si 含量 Dawb Si cov ntsiab lus (%) | <0.1 |
| 体积密度Qhov ceev (g / cm3) | 2.60-2.70 Nws |
| 气孔率Pom tseeb porosity (%) | <16 |
| 抗压强度Crushing zog (MPa) | > 600 |
| 常温抗弯强度Txias dabtsi yog khoov zog (MPa) | 80-90 (20 ° C) |
| 高温抗弯强度Kub dabtsi yog khoov zog (MPa) | 90-100 (1400 ° C) |
| Thermal expansion coefficient @ 1500 ° C (10-6 / ° C) | 4.70 ib |
| 导热系数Thermal conductivity @ 1200 ° C (W / m•K) | 23 |
| 杨氏模量Elastic Modulus (GPa) | 240 |
| 抗热震性Thermal shock tsis kam | kev yZoo heev |
Ningbo VET Energy Technology Co., Ltdyog ib lub tuam txhab high-tech tsom rau kev tsim khoom thiab muag khoom ntawm high-end advanced cov ntaub ntawv, cov ntaub ntawv thiab technologysuav nroggraphite, silicon carbide, ceramics, kho deg thiab lwm yam. Cov khoom siv dav siv hauv photovoltaic, semiconductor, lub zog tshiab, metallurgy, thiab lwm yam ..
Peb pab pawg kws tshaj lij los ntawm cov tsev kawm tshawb fawb sab saum toj hauv tebchaws, tuaj yeem muab cov kev daws teeb meem zoo tshaj plawsrau koj.
Zoo siab txais tos koj tuaj xyuas peb lub Hoobkas, cia peb tham ntxiv!
