Yam Khoom Ntawm Base Graphite Khoom:
Pom pom Density: | 1.85g / cm3 |
Hluav taws xob Resistivity: | 11 μΩ |
Flexural zog: | 49 MPa (500kgf / cm2) |
Ntug Hardness: | 58 |
Tshauv: | <5 ppm |
Thermal conductivity: | 116 W / mK (100 kcal / mhr-℃) |
Peb muab ntau yam susceptors thiab graphite Cheebtsam rau tag nrho cov tam sim no epitaxy reactors. Peb cov khoom suav nrog cov twj tso kua mis rau LPE units, pancake susceptors rau LPE, CSD, thiab Gemini units, thiab ib leeg-wafer susceptors rau thov thiab ASM units.
Los ntawm kev sib koom ua ke muaj kev koom tes nrog kev ua lag luam OEMs, kev paub txog cov ntaub ntawv thiab kev paub txog kev tsim khoom, vet muab cov qauv tsim zoo rau koj daim ntawv thov.
VET Energy yog tustiag tiag chaw tsim tshuaj paus ntawm customized graphite thiab silicon carbide khoom nrog CVD txheej,tuaj yeem muab tauntau yamcustomized qhov chaw rau semiconductor thiab photovoltaic kev lag luam. Our pab pawg neeg los ntawm cov tsev tshawb fawb sab saum toj hauv tsev, tuaj yeem muab cov kev daws teeb meem zoo tshaj plawsrau koj.
Fnoj ntawm peb cov khoom:
1. Kub kub oxidation tsis kam mus txog 1700℃.
2. High purity thiabthermal uniformity
3. Zoo heev corrosion kuj: acid, alkali, ntsev thiab organic reagents.
4. High hardness, compact nto, zoo hais.
5. Lub neej ua haujlwm ntev dua thiab ruaj khov dua
CVD SiC薄膜基本物理性能 Basic Physical Properties ntawm CVD SiCtxheej | |
性质 / Khoom | 典型数值 / Tus nqi |
晶体结构 / Crystal Structure | FCC β theem多晶, 主要为(111) Ib |
密度 / Ceev | 3.21 g / cm³ |
硬度 / Hardness | 2500 维氏硬度 (500g load) |
晶粒大小 / Grain SiZe | 2 ~ 10 hli |
纯度 / Tshuaj Purity | 99.99995% |
Cov duab / Kub Muaj Peev Xwm | 6 40j kg-1· K-1 |
升华温度 / Sublimation kub | 2700 ℃ |
抗弯强度 / Flexural zog | 415 MPa RT 4-point |
杨氏模量 / Young's Modulus | 430 Gpa 4pt khoov, 1300 ℃ |
导热系数 / KublKev coj ua | 300 Wm-1· K-1 |
热膨胀系数 / Thermal Expansion (CTE) | 4.5 × 10-6K-1 |
Zoo siab txais tos koj tuaj xyuas peb lub Hoobkas, cia peb tham ntxiv!