Custom High Purity SiC Coated Graphite Heater Heating Element

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Graphite heater yog ib yam khoom siv hluav taws xob cua sov uas tsim cov cua sov los ntawm cov khoom siv hluav taws xob graphite, feem ntau yog ua los ntawm graphite thiab ceramics. Nws cov qauv wavy tuaj yeem cuam tshuam cov cua sov thiab siv dav hauv kev lag luam, kev tsim kho, kev ua liaj ua teb thiab lub neej txhua hnub. Vim nws zoo thermal conductivity thiab kub stability, graphite cua sov caij yog dav siv nyob rau hauv kev lag luam.

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Khoom cim npe

Cov yam ntxwv tseem ceeb ntawm graphite rhaub:

1. uniformity ntawm cua sov qauv.

2. zoo hluav taws xob conductivity thiab siab hluav taws xob load.

3. corrosion kuj.

4. inoxidizability.

5. muaj tshuaj purity siab.

6. siab mechanical zog.

Qhov kom zoo dua yog lub zog txuag, tus nqi siab thiab kev saib xyuas qis. Peb tuaj yeem tsim los tiv thaiv oxidation thiab lub neej ntev ntev graphite crucible, graphite pwm thiab txhua qhov chaw ntawm graphite rhaub.

Main parameter ntawm graphite rhaub

Technical Specification	Semicera-M3
Qhov ceev (g / cm3)	≥1.85
Cov ntsiab lus tshauv (PPM)	≤500
Ntug Hardness	≥45
Kev Tiv Thaiv Tshwj Xeeb (μ.Ω.m)	≤12
Flexural zog (Mpa)	≥40
Compressive zog (Mpa)	≥70
Max. Grain Loj (μm)	≤ 43
Coefficient ntawm Thermal Expansion Mm/°C	≤ 4.4 * 10-6

VET Energy yog tustiag tiag chaw tsim tshuaj paus ntawm customized graphite thiab silicon carbide khoom nrog CVD txheej,tuaj yeem muab tauntau yamcustomized qhov chaw rau semiconductor thiab photovoltaic kev lag luam. Our pab neeg ua haujlwm los ntawm cov tsev kawm tshawb fawb sab saum toj, tuaj yeem muab cov kev daws teeb meem zoo tshaj plawsrau koj.

Peb tsis tu ncua tsim cov txheej txheem siab heev los muab cov ntaub ntawv siab dua,thiabtau ua haujlwm tawm cov cuab yeej tshwj xeeb patented, uas tuaj yeem ua rau kev sib txuas ntawm cov txheej thiab cov substrate nruj dua thiab tsis tshua muaj detachment.

Fnoj ntawm peb cov khoom:

1. Kub kub oxidation tsis kam mus txog 1700℃.
2. High purity thiabthermal uniformity
3. Zoo heev corrosion kuj: acid, alkali, ntsev thiab organic reagents.
4. High hardness, compact nto, zoo hais.
5. Lub neej ua haujlwm ntev dua thiab ruaj khov dua

CVD SiC薄膜基本物理性能 Basic Physical Properties ntawm CVD SiCtxheej
性质 / Khoom	典型数值 / Tus nqi
晶体结构 / Crystal Structure	FCC β theem多晶, 主要为(111) Ib
密度 / Ceev	3.21 g / cm³
硬度 / Hardness	2500 维氏硬度 (500g load)
晶粒大小 / Grain SiZe	2 ~ 10 hli
纯度 / Tshuaj Purity	99.99995%
Cov duab / Kub Muaj Peev Xwm	6 40j kg^-1· K^-1
升华温度 / Sublimation kub	2700 ℃
抗弯强度 / Flexural zog	415 MPa RT 4-point
杨氏模量 / Young's Modulus	430 Gpa 4pt khoov, 1300 ℃
导热系数 / KublKev coj ua	300 Wm^-1· K^-1
热膨胀系数 / Thermal Expansion (CTE)	4.5 × 10^-6K^-1