6 Nti N Hom SiC Wafer

Lus piav qhia luv luv:

6 Nti N Hom SiC Wafer los ntawm VET Zog yog qhov ua tau zoo ntawm cov khoom siv hluav taws xob tsim los rau kev siv cov khoom siv hluav taws xob zoo tshaj plaws, muab cov thermal conductivity zoo dua thiab lub zog ua haujlwm. VET Energy siv cov cuab yeej siv thev naus laus zis los tsim cov wafers zoo uas ua tau raws li qhov xav tau ntawm cov khoom siv hluav taws xob niaj hnub no, ua kom muaj kev ntseeg siab thiab ua haujlwm ntev hauv cov khoom siv hluav taws xob.

Xa email rau peb Download tau li PDF

Product Detail

Khoom cim npe

Qhov 6 Nti N Hom SiC Wafer no yog tsim los rau kev txhim kho kev ua haujlwm hauv huab cua, ua rau nws yog qhov kev xaiv zoo tshaj plaws rau cov ntawv thov uas xav tau lub zog siab thiab kub tsis kam. Cov khoom tseem ceeb cuam tshuam nrog cov wafer no suav nrog Si Wafer, SiC Substrate, SOI Wafer, thiab SiN Substrate. Cov ntaub ntawv no ua kom pom kev ua tau zoo nyob rau hauv ntau yam ntawm cov txheej txheem tsim khoom semiconductor, ua rau cov khoom siv uas muaj zog thiab ruaj khov.

Rau cov tuam txhab ua haujlwm nrog Epi Wafer, Gallium Oxide Ga2O3, Cassette, lossis AlN Wafer, VET Energy's 6 Inch N Type SiC Wafer muab lub hauv paus tsim nyog rau kev tsim khoom tshiab. Txawm hais tias nws yog nyob rau hauv high-power electronics los yog qhov tseeb nyob rau hauv RF technology, cov wafers kom zoo heev conductivity thiab tsawg thermal kuj, thawb lub ciam teb ntawm efficiency thiab kev ua tau zoo.

WAFFERING SPECIFICATIONS

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Qib,Sl=Semi-lnsulating

Yam khoom	8-Inch	6-Inch			4-Inch
Yam khoom	np	n- Pm	n-Ps	SI	SI
TVV (GBIR)	≤ 6 hli	≤ 6 hli
Hneev (GF3YFCD) - Tus Nqi Tsis Muaj	≤15μm	≤15μm	≤ 25μm		≤15μm
Warp (GF3YFER)	≤ 25μm	≤ 25μm	≤ 40μm		≤ 25μm
LTV (SBIR)-10mmx10mm	<2 m
Wafer Ntug	Beveling

NTAU NTAU

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Qib,Sl=Semi-lnsulating

Yam khoom	8-Inch	6-Inch			4-Inch
	np	n- Pm	n-Ps	SI	SI
Nto tiav	Ob chav sab Optical Polish, Si- ntsej muag CMP
SurfaceRoughness	(10um x 10um) Si-FaceRa≤0.2nm C-Face Ra≤ 0.5nm			(5umx5um) Si-Face Ra≤0.2nm C-Face Ra≤0.5nm
Ntug Chips	Tsis Muaj Kev Tso Cai (ntev thiab dav ≥0.5mm)
Indents	Tsis Muaj Tso Cai
Scratches (Si-Face)	Qty.≤ 5, Ua kom tiav Length≤0.5 × wafer txoj kab uas hla	Qty.≤ 5, Ua kom tiav Length≤0.5 × wafer txoj kab uas hla			Qty.≤ 5, Ua kom tiav Length≤0.5 × wafer txoj kab uas hla
Kev tawg	Tsis Muaj Tso Cai
Ntug Exclusion	3mm ib