Qhov 6 Nti N Hom SiC Wafer no yog tsim los rau kev txhim kho kev ua haujlwm hauv huab cua, ua rau nws yog qhov kev xaiv zoo tshaj plaws rau cov ntawv thov uas xav tau lub zog siab thiab kub tsis kam. Cov khoom tseem ceeb cuam tshuam nrog cov wafer no suav nrog Si Wafer, SiC Substrate, SOI Wafer, thiab SiN Substrate. Cov ntaub ntawv no ua kom pom kev ua tau zoo nyob rau hauv ntau yam ntawm cov txheej txheem tsim khoom semiconductor, ua rau cov khoom siv uas muaj zog thiab ruaj khov.
Rau cov tuam txhab ua haujlwm nrog Epi Wafer, Gallium Oxide Ga2O3, Cassette, lossis AlN Wafer, VET Energy's 6 Inch N Type SiC Wafer muab lub hauv paus tsim nyog rau kev tsim khoom tshiab. Txawm hais tias nws yog nyob rau hauv high-power electronics los yog qhov tseeb nyob rau hauv RF technology, cov wafers kom zoo heev conductivity thiab tsawg thermal kuj, thawb lub ciam teb ntawm efficiency thiab kev ua tau zoo.
WAFFERING SPECIFICATIONS
*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Qib,Sl=Semi-lnsulating
Yam khoom | 8-Inch | 6-Inch | 4-Inch | ||
np | n- Pm | n-Ps | SI | SI | |
TVV (GBIR) | ≤ 6 hli | ≤ 6 hli | |||
Hneev (GF3YFCD) - Tus Nqi Tsis Muaj | ≤15μm | ≤15μm | ≤ 25μm | ≤15μm | |
Warp (GF3YFER) | ≤ 25μm | ≤ 25μm | ≤ 40μm | ≤ 25μm | |
LTV (SBIR)-10mmx10mm | < 2 m os | ||||
Wafer Ntug | Beveling |
NTAU NTAU
*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Qib,Sl=Semi-lnsulating
Yam khoom | 8-Inch | 6-Inch | 4-Inch | ||
np | n- Pm | n-Ps | SI | SI | |
Nto tiav | Ob chav sab Optical Polish, Si- ntsej muag CMP | ||||
SurfaceRoughness | (10um x 10um) Si-FaceRa≤0.2nm | (5umx5um) Si-Face Ra≤0.2nm | |||
Ntug Chips | Tsis Muaj Kev Tso Cai (ntev thiab dav ≥0.5mm) | ||||
Indents | Tsis Muaj Tso Cai | ||||
Scratches (Si-Face) | Qty.≤ 5, Ua kom tiav | Qty.≤ 5, Ua kom tiav | Qty.≤ 5, Ua kom tiav | ||
Kev tawg | Tsis Muaj Tso Cai | ||||
Ntug Exclusion | 3mm ib |