4 Nti GaN ntawm SiC Wafer

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VET Energy's 4-nti GaN ntawm SiC wafer yog cov khoom lag luam hloov pauv hauv kev lag luam hluav taws xob hluav taws xob. Cov wafer no ua ke zoo heev thermal conductivity ntawm silicon carbide (sic) nrog kev xaiv zoo tshaj plaws rau kev tsim cov khoom lag luam siab, cov khoom siv hluav taws xob zoo. VET Zog ua kom muaj kev ua tau zoo thiab sib xws ntawm wafer los ntawm kev siv tshuab MOCVD epitaxial siab heev.

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Khoom cim npe

VET Energy cov khoom lag luam tsis txwv rau GaN ntawm SiC wafers. Peb kuj muab ntau yam khoom siv semiconductor substrate, suav nrog Si Wafer, SiC Substrate, SOI Wafer, SiN Substrate, Epi Wafer, thiab lwm yam. Tsis tas li ntawd, peb tseem nquag tsim cov ntaub ntawv dav dav ntawm cov khoom siv semiconductor, xws li Gallium Oxide Ga2O3 thiab AlN. Wafer, kom ua tau raws li lub zog hluav taws xob yav tom ntej kev lag luam hluav taws xob qhov kev thov rau cov cuab yeej ua haujlwm siab dua.

VET Energy muab cov kev pabcuam hloov kho tau yooj yim, thiab tuaj yeem kho GaN epitaxial txheej ntawm cov thicknesses sib txawv, ntau hom doping, thiab sib txawv wafer ntau thiab tsawg raws li cov kev xav tau tshwj xeeb ntawm cov neeg siv khoom. Tsis tas li ntawd, peb kuj muab kev pabcuam kev tshaj lij thiab kev pabcuam tomqab muag los pab cov neeg siv khoom sai sai tsim cov khoom siv hluav taws xob ua haujlwm siab.

WAFFERING SPECIFICATIONS

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Qib,Sl=Semi-lnsulating

Yam khoom	8-Inch	6-Inch			4-Inch
Yam khoom	np	n- Pm	n-Ps	SI	SI
TVV (GBIR)	≤ 6 hli	≤ 6 hli
Hneev (GF3YFCD) - Tus Nqi Tsis Muaj	≤15μm	≤15μm	≤ 25μm		≤15μm
Warp (GF3YFER)	≤ 25μm	≤ 25μm	≤ 40μm		≤ 25μm
LTV (SBIR)-10mmx10mm	< 2 m os
Wafer Ntug	Beveling

NTAU NTAU

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Qib,Sl=Semi-lnsulating

Yam khoom	8-Inch	6-Inch			4-Inch
	np	n- Pm	n-Ps	SI	SI
Nto tiav	Ob chav sab Optical Polish, Si- ntsej muag CMP
SurfaceRoughness	(10um x 10um) Si-FaceRa≤0.2nm C-Face Ra≤ 0.5nm			(5umx5um) Si-Face Ra≤0.2nm C-Face Ra≤0.5nm
Ntug Chips	Tsis Muaj Kev Tso Cai (ntev thiab dav ≥0.5mm)
Indents	Tsis Muaj Tso Cai
Scratches (Si-Face)	Qty.≤ 5, Ua kom tiav Length≤0.5 × wafer txoj kab uas hla	Qty.≤ 5, Ua kom tiav Length≤0.5 × wafer txoj kab uas hla			Qty.≤ 5, Ua kom tiav Length≤0.5 × wafer txoj kab uas hla
Kev tawg	Tsis Muaj Tso Cai
Ntug Exclusion	3mm ib