HuahanaDkakau ana
Hoʻohana nui ʻia ʻo Silicon carbide Wafer Boat ma ke ʻano he wafer paʻa i ke kaʻina diffusion kiʻekiʻe.
Pono:
Kūleʻa wela kiʻekiʻe:hoʻohana maʻamau ma 1800 ℃
ʻO ke kau wela wela kiʻekiʻe:like me ka mea graphite
Paʻakiki kiʻekiʻe:ʻo ka paʻakikī lua wale nō i ke daimana, boron nitride
ʻO ke kūpaʻa ʻino:ʻAʻohe mea ʻino i ka waikawa ikaika a me ka alkali, ʻoi aku ka maikaʻi o ka pale ʻana ma mua o ka tungsten carbide a me ka alumina.
Kaumaha māmā:haʻahaʻa haʻahaʻa, kokoke i ka alumini
ʻAʻohe deformation: ka helu haʻahaʻa o ka hoʻonui wela
Ke kū'ē i ka ha'alulu wela:hiki iā ia ke pale i nā loli wela ʻoi, pale i ka haʻalulu wela, a paʻa ka hana
Na Waiwai Kino o SiC
Waiwai | Waiwai | ʻano hana |
ʻO ka mānoanoa | 3.21 g/cc | Piko-lele a me ke ana |
wela kūikawā | 0.66 J/g °K | Pulsed laser flash |
Ka ikaika wiliwili | 450 MPa560 MPa | 4 piko piko, RT4 piko piko, 1300° |
ʻOoleʻa haʻihaʻi | 2.94 MPa m1/2 | Microindentation |
ʻoʻoleʻa | 2800 | ʻO Vicker, 500g ukana |
Elastic ModulusYoung's Modulus | 450 GPa430 GPa | 4 pt piko, RT4 pt piko, 1300 °C |
Ka nui o ka palaoa | 2 – 10 µm | SEM |
Na waiwai wela o SiC
ʻO ka hoʻoili wela | 250 W/m °K | ʻO ke ala uila laser, RT |
Hoʻonui wela (CTE) | 4.5 x 10-6 °K | ʻO ka mahana lumi i 950 °C, silica dilatometer |