SiC Wafer Boat/Tower

ʻO ka wehewehe pōkole:


Huahana Huahana

Huahana Huahana

HuahanaDkakau ana

Hoʻohana nui ʻia ʻo Silicon carbide Wafer Boat ma ke ʻano he wafer paʻa i ke kaʻina diffusion kiʻekiʻe.

Pono:

Kūleʻa wela kiʻekiʻe:hoʻohana maʻamau ma 1800 ℃

ʻO ke kau wela wela kiʻekiʻe:like me ka mea graphite

Paʻakiki kiʻekiʻe:ʻo ka paʻakikī lua wale nō i ke daimana, boron nitride

ʻO ke kūpaʻa ʻino:ʻAʻohe mea ʻino i ka waikawa ikaika a me ka alkali, ʻoi aku ka maikaʻi o ka pale ʻana ma mua o ka tungsten carbide a me ka alumina.

Kaumaha māmā:haʻahaʻa haʻahaʻa, kokoke i ka alumini

ʻAʻohe deformation: ka helu haʻahaʻa o ka hoʻonui wela

Ke kū'ē i ka ha'alulu wela:hiki iā ia ke pale i nā loli wela ʻoi, pale i ka haʻalulu wela, a paʻa ka hana

 

Na Waiwai Kino o SiC

Waiwai Waiwai ʻano hana
ʻO ka mānoanoa 3.21 g/cc Piko-lele a me ke ana
wela kūikawā 0.66 J/g °K Pulsed laser flash
Ka ikaika wiliwili 450 MPa560 MPa 4 piko piko, RT4 piko piko, 1300°
ʻOoleʻa haʻihaʻi 2.94 MPa m1/2 Microindentation
ʻoʻoleʻa 2800 ʻO Vicker, 500g ukana
Elastic ModulusYoung's Modulus 450 GPa430 GPa 4 pt piko, RT4 pt piko, 1300 °C
Ka nui o ka palaoa 2 – 10 µm SEM

 

Na waiwai wela o SiC

ʻO ka hoʻoili wela 250 W/m °K ʻO ke ala uila laser, RT
Hoʻonui wela (CTE) 4.5 x 10-6 °K ʻO ka mahana lumi i 950 °C, silica dilatometer

 

 

waapa1   waapa2

waapa3   waapa4


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