Nā ʻano maʻamau o ka Material Graphite Base:
ʻIke ʻia ka mānoanoa: | 1.85 g/cm3 |
Ke kū'ē uila: | 11 μΩm |
ʻO ke koʻikoʻi ʻoluʻolu: | 49 MPa (500kgf/cm2) |
Paʻa Paʻa: | 58 |
lehu: | <5ppm |
ʻO ka wela wela: | 116 W/mK (100 kcal/mhr- ℃) |
Hāʻawi mākou i nā ʻano susceptors a me nā ʻāpana graphite no nā reactors epitaxy i kēia manawa. Loaʻa i kā mākou huahana nā mea hoʻopiʻi barela no nā ʻāpana LPE, nā mea hoʻopiʻi pancake no nā ʻāpana LPE, CSD, a me Gemini, a me nā ʻāpana wafer hoʻokahi no nā ʻāpana noi a me ASM.
Ma ka hoʻohui ʻana i nā pilina ikaika me nā OEM alakaʻi, ka ʻike loea a me ka ʻike hana hana, hāʻawi ʻo vet i ka hoʻolālā maikaʻi loa no kāu noi.
ʻO VET Energy ka kamea hana maoli o ka graphite maʻamau a me nā huahana silicon carbide me ka uhi CVD,hiki ke hoolakoʻokoʻanā ʻāpana i hana ʻia no ka semiconductor a me ka ʻoihana photovoltaic. OʻO kāu hui ʻenehana mai nā keʻena noiʻi kūloko kiʻekiʻe, hiki ke hāʻawi i nā ʻoihana ʻoihana ʻoi aku ka nuināu.
Fnā ʻano o kā mākou huahana:
1. Kiʻekiʻe wela oxidation kū'ē a hiki i 1700℃.
2. Maʻemaʻe kiʻekiʻe ahoʻolikelike wela
3. ʻOi aku ka maikaʻi o ka corrosion resistance: acid, alkali, paʻakai a me nā mea hoʻohui.
4. ʻO ka paʻakikī kiʻekiʻe, ka ʻili paʻa, nā ʻāpana maikaʻi.
5. ʻOi aku ka lōʻihi o ke ola a ʻoi aku ka lōʻihi
CVD SiC薄膜基本物理性能 Nā waiwai kino kumu o CVD SiCka uhi ʻana | |
性质 / Waiwai | 典型数值 / Waiwai maʻamau |
晶体结构 / Hoʻomoe Crystal | Māhele FCC β多晶,主要为(111)取向 |
密度 / Paʻa | 3.21 g/cm³ |
硬度 / Oolea | 2500 维氏硬度(500g load) |
晶粒大小 / ʻAiʻa palaoa | 2~10μm |
纯度 / Maemae Kemika | 99.99995% |
热容 / Hikina Wela | 640 J·kg-1·K-1 |
升华温度 / Kaumaha Sublimation | 2700 ℃ |
抗弯强度 / Ka Ikaika Pilikia | 415 MPa RT 4-point |
杨氏模量 / 'Ōpio's Modulus | 430 Gpa 4pt piko, 1300 ℃ |
导热系数 / ThermalʻO ka hoʻokō | 300W·m-1·K-1 |
热膨胀系数 / Hoʻonui wela (CTE) | 4.5×10-6K-1 |
Hoʻokipa maikaʻi iā ʻoe e kipa i kā mākou hale hana, e kūkākūkā hou kāua!