ʻO nā mea kūʻai kūʻai kūʻai maikaʻi ʻo Kina abrasive polishing a me Sandblasting Silicon Carbide Nano Sic me ka hana wela wela maikaʻi.

ʻO ka wehewehe pōkole:


  • Kahi i kumu:Kina
  • Hoʻokumu Crystal:Māhele FCCβ
  • ʻO ka mānoanoa:3.21 g/cm;
  • ʻoʻoleʻa:2500 Vickers;
  • Ka nui o ka palaoa:2~10μm;
  • Maʻemaʻe Kemika:99.99995%;
  • Kaha wela:640J·kg-1·K-1;
  • Mahana Sublimation:2700 ℃;
  • Ka ikaika o ke kino:415 Mpa (RT 4-Point);
  • 'Ōpio's Modulus:430 Gpa (4pt piko, 1300 ℃);
  • Hoʻonui Thermal (CTE):4.5 10-6K-1;
  • ʻO ka wela wela:300(W/MK);
  • Huahana Huahana

    Huahana Huahana

    Me kā mākou hoʻokele maikaʻi, ka mana ʻenehana ikaika a me ke kaʻina hana koʻikoʻi maikaʻi loa, hoʻomau mākou i ka hāʻawi ʻana i kā mākou mea kūʻai aku i ke kūlana kiʻekiʻe kiʻekiʻe, nā kumukūʻai kūʻai kūpono a me nā mea hoʻolako maikaʻi. Ke manaʻo nei mākou e lilo i waena o kāu mau hoa hilinaʻi nui a loaʻa iā ʻoe ka ʻoluʻolu no nā Kūʻai Kūʻai Kūʻai maikaʻi ʻo China Abrasive Polishing and Sandblasting Silicon Carbide NanoʻO Sicme ka Good Thermal Conductivity, ʻO kā mākou pahuhopu hope loa ke kūlana ma ke ʻano he inoa kiʻekiʻe a alakaʻi hoʻi ma ke ʻano he paionia i kā mākou kahua. Manaʻo mākou e loaʻa ka hilinaʻi o ka mea kūʻai aku i kā mākou ʻike huahana i ka hana ʻana i ka mea kūʻai aku, makemake e hui pū a hana pū i kahi manawa lōʻihi ʻoi aku ka maikaʻi me ʻoe!
    Me kā mākou hoʻokele maikaʻi, ka mana ʻenehana ikaika a me ke kaʻina hana koʻikoʻi maikaʻi loa, hoʻomau mākou i ka hāʻawi ʻana i kā mākou mea kūʻai aku i ke kūlana kiʻekiʻe kiʻekiʻe, nā kumukūʻai kūʻai kūpono a me nā mea hoʻolako maikaʻi. Manaʻo mākou e lilo i waena o kāu mau hoa hilinaʻi nui a loaʻa iā ʻoe ka hauʻoliKina Silicon Carbide, ʻO Sic, ʻO kā mākou pahuhopu "ʻo ka hoʻolako ʻana i nā huahana a me nā hoʻonā a me ka lawelawe maikaʻi loa no kā mākou mea kūʻai aku, no laila ke maopopo nei mākou e loaʻa iā ʻoe kahi pōmaikaʻi ma o ka hui pū ʻana me mākou". Inā makemake ʻoe i kekahi o kā mākou mea kūʻai a makemake paha e kūkākūkā i kahi kauoha maʻamau, e ʻoluʻolu e leka uila iā mākou. Ke kakali nei mākou i ka hoʻokumu ʻana i nā pilina ʻoihana kūleʻa me nā mea kūʻai aku hou a puni ka honua i ka wā e hiki mai ana.
    Hōʻike huahana

    Hāʻawi kā mākou hui i nā lawelawe kaʻina hana hoʻoheheʻe SiC ma ke ʻano CVD ma ka ʻili o ka graphite, ceramics a me nā mea ʻē aʻe, i hiki ai i nā kinoea kūikawā i loaʻa ke kalapona a me ke silika i ke kiʻekiʻe kiʻekiʻe e loaʻa ai nā molekala SiC maʻemaʻe kiʻekiʻe. e hana ana i ka papa pale SIC.

    Nā hiʻohiʻona nui:

    1. Kiʻekiʻe wela oxidation kū'ē:

    ʻoi aku ka maikaʻi o ka pale ʻana i ka oxidation ke kiʻekiʻe ka mahana e like me 1600 C.

    2. Maʻemaʻe kiʻekiʻe: hana ʻia e ka hoʻoheheʻe ʻana i ka mahu ma lalo o ke kūlana chlorination kiʻekiʻe.

    3. Erosion kū'ē: kiʻekiʻe paakiki, paʻaʻiliʻili, maikaʻi particles.

    4. Ke kū'ē i ka corrosion: acid, alkali, paʻakai a me nā mea hoʻoulu.

    Nā kiko'ī nui o ka CVD-SIC Coating

    Nā Waiwai SiC-CVD

    Hoʻokumu Crystal Māhele FCC β
    ʻO ka mānoanoa g/cm ³ 3.21
    ʻoʻoleʻa ʻO ka paʻakikī o Vickers 2500
    Ka nui o ka palaoa μm 2~10
    Maemae Kemika % 99.99995
    Kaha Wela J·kg-1 ·K-1 640
    Mahana Sublimation 2700
    Ikaika Felexural MPa (RT 4-point) 415
    ʻO Young's Modulus Gpa (4pt piko, 1300 ℃) 430
    Hoʻonui wela (CTE) 10-6K-1 4.5
    ʻO ke kau wela wela (W/mK) 300

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