SiC mai rufaffiyar sussetpor shine maɓalli mai mahimmanci da aka yi amfani da shi a cikin matakai daban-daban na masana'antar semiconductor.Muna amfani da fasahar mu ta haƙƙin mallaka don yin suturar SiC mai rufi tare da tsaftatacciya mai matuƙar tsafta, daidaitaccen sutura mai kyau da kyakkyawar rayuwar sabis, gami da babban juriya na sinadarai da kaddarorin kwanciyar hankali na thermal.
Siffofin samfuranmu:
1. High zafin jiki hadawan abu da iskar shaka juriya har zuwa 1700 ℃.
2. Babban tsafta da daidaituwar thermal
3. Excellent lalata juriya: acid, alkali, gishiri da kuma Organic reagents.
4. Babban taurin, m surface, lafiya barbashi.
5. Tsawon rayuwar sabis kuma mafi dorewa
| CVD SiC薄膜基本物理性能 Asalin kaddarorin jiki na CVD SiCshafi | |
| 性质 / Dukiya | 典型数值 / Yawan Daraja |
| 晶体结构 / Tsarin Crystal | FCC β lokaci多晶，主要为（111) 取向 |
| 密度 / Yawan yawa | 3.21g/cm³ |
| 硬度 / Tauri | 2500 维氏硬度 (500g kaya) |
| 晶粒大小 / Hatsi SiZe | 2 ~ 10 μm |
| 纯度 / Sinadaran Tsabta | 99.99995% |
| 热容 / Ƙarfin zafi | 640kg-1· K-1 |
| 升华温度 / Sublimation Zazzabi | 2700 ℃ |
| 抗弯强度 / Ƙarfin Ƙarfi | 415 MPa RT 4-point |
| 杨氏模量 / Matasa Modul | 430 Gpa 4pt lankwasa, 1300 ℃ |
| 导热系数 / ThermalGudanarwa | 300 w·m-1· K-1 |
| 热膨胀系数 / Fadada thermal (CTE) | 4.5×10-6K-1 |
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