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Me yasa bangon gefe suke lanƙwasa yayin bushewar etching?
by admin on 24-12-03
Rashin daidaituwar ion bombardment Dry etching yawanci wani tsari ne wanda ya haɗu da tasirin jiki da sinadarai, wanda bam ɗin ion wata hanya ce mai mahimmanci ta jiki. Yayin aiwatar da etching, kusurwar abin da ya faru da rarraba makamashi na ions na iya zama rashin daidaituwa. Idan ion ya faru ...
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Gabatarwa zuwa fasahar CVD guda uku gama gari
by admin on 24-12-03
Tsarin tururi na sinadarai (CVD) shine fasahar da aka fi amfani da ita a cikin masana'antar semiconductor don adana kayayyaki iri-iri, gami da kewayon kayan rufewa, yawancin kayan ƙarfe da kayan gami da ƙarfe. CVD fasahar shirya fina-finai ce ta gargajiya. Mulkinsa...
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Shin lu'u-lu'u na iya maye gurbin sauran na'urorin semiconductor masu ƙarfi?
by admin on 24-11-25
A matsayin ginshiƙin na'urorin lantarki na zamani, kayan semiconductor suna fuskantar canje-canjen da ba a taɓa gani ba. A yau, lu'u-lu'u a hankali yana nuna babban yuwuwar sa a matsayin abu na huɗu na semiconductor tare da ingantattun kayan wutar lantarki da yanayin zafi da kwanciyar hankali a ƙarƙashin matsananciyar ma'amala ...
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Menene tsarin tsara tsarin CMP?
by admin on 24-11-25
Dual-Damascene fasaha ce ta tsari da ake amfani da ita don kera haɗin haɗin ƙarfe a cikin haɗaɗɗun da'irori. Wani ci gaba ne na tsarin Damascus. Ta hanyar kafa ta cikin ramuka da ramuka a lokaci guda a cikin matakan tsari guda ɗaya da kuma cika su da ƙarfe, haɗin gwiwar masana'anta na m ...
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Graphite tare da rufin TaC
by admin on 24-11-21
I. Tsari bincike na siga 1. TaCl5-C3H6-H2-Ar tsarin 2. Deposition zafin jiki: Dangane da thermodynamic dabara, an lasafta cewa lokacin da zafin jiki ya fi 1273K, da Gibbs free makamashi na dauki ne sosai low kuma dauki yayi in mun gwada da kammala. A re...
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Silicon carbide crystal girma tsari da kayan aikin fasaha
by admin on 24-11-21
1. SiC crystal ci gaban fasaha hanya PVT (hanyar sublimation), HTCVD (high zazzabi CVD), LPE (ruwa lokaci hanya) su ne uku na kowa SiC crystal girma hanyoyin; Hanyar da aka fi sani a cikin masana'antu ita ce hanyar PVT, kuma fiye da 95% na SiC guda lu'ulu'u ana girma ta PVT ...
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Shirye-shirye da Haɓaka Ayyuka na Abubuwan Haɗaɗɗen Silicon Carbon Porous
by admin on 24-11-13
Batura lithium-ion suna haɓakawa a cikin alkiblar ƙarfin ƙarfin ƙarfi. A dakin da zafin jiki, silicon-based korau electrode kayan gami tare da lithium don samar da lithium-arzikin samfurin Li3.75Si lokaci, tare da takamaiman iya aiki har zuwa 3572 mAh / g, wanda ya fi girma fiye da theor ...
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Thermal Oxidation na Single Crystal Silicon
by admin on 24-11-13
Samuwar silicon dioxide a saman siliki ana kiransa iskar shaka, kuma ƙirƙirar silicon dioxide mai ƙarfi da ƙarfi ya haifar da haifuwar fasahar siliki mai haɗaɗɗun tsarin kewayawa. Ko da yake akwai hanyoyi da yawa don girma silicon dioxide kai tsaye a saman silico ...
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Gudanar da UV don Marufi-Fita Wafer-Mataki
by admin a ranar 24-11-05
Fan out wafer matakin marufi (FOWLP) hanya ce mai inganci a cikin masana'antar semiconductor. Amma illar illar wannan tsari shine warping da guntu diyya. Duk da ci gaba da haɓaka matakin wafer da matakin fan fitar da fasaha, waɗannan batutuwan da suka shafi gyare-gyaren har yanzu exi ...
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