Layin samfurin VET Energy bai iyakance ga GaN akan wafers na SiC ba. Har ila yau, muna samar da nau'o'in nau'i na kayan aiki na semiconductor, ciki har da Si Wafer, SiC Substrate, SOI Wafer, SiN Substrate, Epi Wafer, da dai sauransu. Wafer, don saduwa da buƙatun masana'antar lantarki ta gaba don na'urorin aiki masu girma.
VET Energy yana ba da sabis na gyare-gyare masu sassauƙa, kuma yana iya keɓance GaN epitaxial yadudduka na kauri daban-daban, nau'ikan doping daban-daban, da girman wafer daban-daban gwargwadon takamaiman bukatun abokan ciniki. Bugu da ƙari, muna kuma ba da tallafin fasaha na ƙwararru da sabis na tallace-tallace don taimakawa abokan ciniki da sauri haɓaka na'urorin lantarki masu ƙarfi.
BAYANIN WAFERING
*n-Pm=n-nau'in Pm-Grade,n-Ps=n-nau'in Ps-Grade,Sl=Semi-lnsulating
Abu | 8-inci | 6-Inci | 4-Inci | ||
nP | n-Pm | n-Ps | SI | SI | |
TTV(GBIR) | ≤6 ku | ≤6 ku | |||
Bow(GF3YFCD) - Cikakken Ƙimar | ≤15 μm | ≤15 μm | ≤25μm | ≤15 μm | |
Warp(GF3YFER) | ≤25μm | ≤25μm | ≤40 μm | ≤25μm | |
LTV(SBIR) -10mmx10mm | <2μm | ||||
Wafar Edge | Beveling |
SURFACI GAME
*n-Pm=n-nau'in Pm-Grade,n-Ps=n-nau'in Ps-Grade,Sl=Semi-lnsulating
Abu | 8-inci | 6-Inci | 4-Inci | ||
nP | n-Pm | n-Ps | SI | SI | |
Ƙarshen Sama | Yaren mutanen Poland na gani na gefe biyu, Si- Face CMP | ||||
SurfaceRoughness | (10um x 10um) Si-FaceRa≤0.2nm | (5umx5um) Si-Face Ra≤0.2nm | |||
Kwakwalwa na Edge | Babu Wanda Ya Halatta (tsawo da nisa≥0.5mm) | ||||
Indents | Babu Wanda Ya Halatta | ||||
Scratches (Si-Face) | Qty.≤5, Taruwa | Qty.≤5, Taruwa | Qty.≤5, Taruwa | ||
Karas | Babu Wanda Ya Halatta | ||||
Ƙarƙashin Ƙarfi | 3 mm |