6 inch P Nau'in Silicon Wafer

6 Inci P Nau'in Silicon Wafer Featured Hoton

Takaitaccen Bayani:

VET Energy 6-inch P-type silicon wafer kayan tushe ne mai inganci na semiconductor, wanda aka yi amfani da shi sosai wajen kera na'urorin lantarki daban-daban. VET Energy yana amfani da ingantaccen tsarin ci gaban CZ don tabbatar da cewa wafer yana da ingantacciyar kristal, ƙarancin lahani da babban daidaituwa.

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Cikakken Bayani

Tags samfurin

Layin samfurin VET Energy bai iyakance ga wafern silicon ba. Har ila yau, muna samar da nau'i-nau'i na kayan haɗin gwiwar semiconductor, ciki har da SiC Substrate, SOI Wafer, SiN Substrate, Epi Wafer, da dai sauransu, da kuma sababbin ƙananan bandgap semiconductor kayan kamar Gallium Oxide Ga2O3 da AlN Wafer. Waɗannan samfuran za su iya biyan buƙatun aikace-aikacen abokan ciniki daban-daban a cikin wutar lantarki, mitar rediyo, firikwensin da sauran filayen.

Filin aikace-aikace:
•Haɗin kai:A matsayin ainihin kayan don masana'antar keɓaɓɓiyar keɓaɓɓiyar masana'anta, nau'in siliki na nau'in P-type ana amfani dashi sosai a cikin da'irori daban-daban na dabaru, abubuwan tunawa, da sauransu.
•Na'urorin wuta:Ana iya amfani da wafer siliki na nau'in P don yin na'urorin wuta kamar transistor da diodes.
•Sensors:Ana iya amfani da wafer siliki na nau'in P don yin nau'ikan firikwensin daban-daban, kamar na'urori masu auna matsa lamba, na'urori masu auna zafin jiki, da sauransu.
•Kwayoyin Rana:P-type silicon wafers ne wani muhimmin bangaren na hasken rana Kwayoyin.

VET Energy yana ba abokan ciniki da keɓance hanyoyin magance wafer, kuma suna iya keɓance wafers tare da tsayayya daban-daban, abun ciki na oxygen daban-daban, kauri daban-daban da sauran ƙayyadaddun ƙayyadaddun takamaiman bukatun abokan ciniki. Bugu da ƙari, muna kuma ba da tallafin fasaha na sana'a da sabis na tallace-tallace bayan-tallace-tallace don taimakawa abokan ciniki su magance matsalolin daban-daban da aka fuskanta a cikin tsarin samarwa.

BAYANIN WAFERING

*n-Pm=n-nau'in Pm-Grade,n-Ps=n-nau'in Ps-Grade,Sl=Semi-lnsulating

Abu	8-inci	6-Inci			4-Inci
Abu	nP	n-Pm	n-Ps	SI	SI
TTV(GBIR)	≤6 ku	≤6 ku
Bow(GF3YFCD) - Cikakken Ƙimar	≤15 μm	≤15 μm	≤25μm		≤15 μm
Warp(GF3YFER)	≤25μm	≤25μm	≤40 μm		≤25μm
LTV(SBIR) -10mmx10mm	<2μm
Wafar Edge	Beveling

SURFACI GAME

*n-Pm=n-nau'in Pm-Grade,n-Ps=n-nau'in Ps-Grade,Sl=Semi-lnsulating

Abu	8-inci	6-Inci			4-Inci
	nP	n-Pm	n-Ps	SI	SI
Ƙarshen Sama	Yaren mutanen Poland na gani na gefe biyu, Si- Face CMP
SurfaceRoughness	(10um x 10um) Si-FaceRa≤0.2nm C-Face Ra≤ 0.5nm			(5umx5um) Si-Face Ra≤0.2nm C-Face Ra≤0.5nm
Kwakwalwa na Edge	Babu Wanda Ya Halatta (tsawo da nisa≥0.5mm)
Indents	Babu Wanda Ya Halatta
Scratches (Si-Face)	Qty.≤5, Taruwa Length≤0.5× wafer diamita	Qty.≤5, Taruwa Length≤0.5× wafer diamita			Qty.≤5, Taruwa Length≤0.5× wafer diamita
Karas	Babu Wanda Ya Halatta
Ƙarƙashin Ƙarfi	3 mm