4 inch GaAs Wafer

Takaitaccen Bayani:

VET Energy 4 inch GaAs wafer babban tsattsauran ra'ayi ne na semiconductor wanda ya shahara don kyawawan kaddarorinsa na lantarki, yana mai da shi kyakkyawan zaɓi don aikace-aikace da yawa. Makamashi na VET yana amfani da ingantattun dabarun haɓaka kristal don samar da wafers na GaAs tare da daidaituwa na musamman, ƙarancin ƙarancin lahani, da daidaitattun matakan doping.


Cikakken Bayani

Tags samfurin

4 Inch GaAs Wafer daga VET Energy abu ne mai mahimmanci don na'urori masu sauri da optoelectronic, gami da amplifiers RF, LEDs, da ƙwayoyin hasken rana. Waɗannan wafers an san su don babban motsi na lantarki da ikon yin aiki a mafi girman mitoci, yana mai da su maɓalli mai mahimmanci a aikace-aikacen semiconductor na ci gaba. Makamashi na VET yana tabbatar da mafi kyawun wafers na GaAs tare da kauri iri ɗaya da ƙarancin lahani, wanda ya dace da kewayon hanyoyin ƙirƙira da yawa.

Waɗannan 4 Inch GaAs Wafers sun dace da kayan aikin semiconductor daban-daban kamar Si Wafer, SiC Substrate, SOI Wafer, da SiN Substrate, yana mai da su m don haɗawa cikin gine-ginen na'urori daban-daban. Ko ana amfani da su don samar da Epi Wafer ko tare da kayan yankan-baki kamar Gallium Oxide Ga2O3 da AlN Wafer, suna ba da ingantaccen tushe don kayan lantarki na gaba. Bugu da kari, wafers sun dace sosai tare da tsarin kulawa na tushen Cassette, yana tabbatar da ingantaccen aiki a cikin duka bincike da yanayin masana'anta mai girma.

VET Energy yana ba da cikakkiyar fayil na kayan aikin semiconductor, gami da Si Wafer, SiC Substrate, SOI Wafer, SiN Substrate, Epi Wafer, Gallium Oxide Ga2O3, da AlN Wafer. Layin samfurin mu daban-daban yana biyan bukatun aikace-aikacen lantarki daban-daban, daga na'urorin lantarki zuwa RF da optoelectronics.

VET Energy yana ba da wafers na GaAs na musamman don biyan takamaiman buƙatunku, gami da matakan doping daban-daban, daidaitawa, da ƙarewar saman. Ƙwararrun ƙwararrunmu suna ba da goyan bayan fasaha da sabis na tallace-tallace don tabbatar da nasarar ku.

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BAYANIN WAFERING

*n-Pm=n-nau'in Pm-Grade,n-Ps=n-nau'in Ps-Grade,Sl=Semi-lnsulating

Abu

8-inci

6-Inci

4-Inci

nP

n-Pm

n-Ps

SI

SI

TTV(GBIR)

≤6 ku

≤6 ku

Bow(GF3YFCD) - Cikakken Ƙimar

≤15 μm

≤15 μm

≤25μm

≤15 μm

Warp(GF3YFER)

≤25μm

≤25μm

≤40 μm

≤25μm

LTV(SBIR) -10mmx10mm

<2μm

Wafar Edge

Beveling

SURFACI GAME

*n-Pm=n-nau'in Pm-Grade,n-Ps=n-nau'in Ps-Grade,Sl=Semi-lnsulating

Abu

8-inci

6-Inci

4-Inci

nP

n-Pm

n-Ps

SI

SI

Ƙarshen Sama

Yaren mutanen Poland na gani na gefe biyu, Si- Face CMP

SurfaceRoughness

(10um x 10um) Si-FaceRa≤0.2nm
C-Face Ra≤ 0.5nm

(5umx5um) Si-Face Ra≤0.2nm
C-Face Ra≤0.5nm

Kwakwalwa na Edge

Babu Wanda Ya Halatta (tsawo da nisa≥0.5mm)

Indents

Babu Wanda Ya Halatta

Scratches (Si-Face)

Qty.≤5, Taruwa
Length≤0.5× wafer diamita

Qty.≤5, Taruwa
Length≤0.5× wafer diamita

Qty.≤5, Taruwa
Length≤0.5× wafer diamita

Karas

Babu Wanda Ya Halatta

Ƙarƙashin Ƙarfi

3 mm

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