I-OEM/ODM I-GaN-Basedepitaxial esitolo esidayisa yonke impahla ku-Sic Substrates 4′′

I-Wholesale OEM/ODM GaN-Basedepitaxial ku-Sic Substrates 4′′ Isithombe Esifakiwe

Incazelo emfushane:

Izithwali ze-wafer ezisetshenziswa ekucubunguleni ukukhula kwe-epitaxial kumele zibekezelele amazinga okushisa aphezulu kanye nokuhlanzwa kwamakhemikhali okunzima. I-CoorsTek Clear Carbon™ susceptors yakhelwe ngokukhethekile lezi zicelo zemishini ye-epitaxy efunekayo. I-high-purity silicon carbide (i-SiC) ehlanganiswe nokwakhiwa kwegraphite inikeza ukumelana nokushisa okuphakeme, ngisho nokufana okushisayo kogqinsi nokumelana nongqimba lwe-epi, kanye nokumelana namakhemikhali okuhlala isikhathi eside. I-Fine SiC crystal coating inikeza indawo ehlanzekile, ebushelelezi, ebalulekile ekuphathweni njengoba ama-wafer ahlanzekile athinta i-susceptor ezindaweni eziningi kuyo yonke indawo yawo.

Thumela i-imeyili kithi Landa njenge-PDF

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Empeleni kuyindlela enhle yokuthuthukisa imikhiqizo yethu nezixazululo nokulungisa. Umgomo wethu kufanele kube ukukhiqiza imikhiqizo eqanjiwe nezisombululo kumakhasimende sisebenzisa isipiliyoni sokusebenza esihle se-Wholesale OEM/ODM GaN-Basedepitaxial ku-Sic Substrates 4′′, Sigxila ekwakhiweni komkhiqizo wethu futhi sihlanganiswe nezinkulumo eziningi ezinokuhlangenwe nakho kanye nemishini yezinga lokuqala. . Izimpahla zethu okufanele ube nazo.
Empeleni kuyindlela enhle yokuthuthukisa imikhiqizo yethu nezixazululo nokulungisa. Umgomo wethu kufanele kube ukukhiqiza imikhiqizo eqanjiwe nezisombululo kumakhasimende sisebenzisa isipiliyoni sokusebenza esihleI-China GaN Substrates ne-GaN Film, Ngobubanzi obubanzi, ikhwalithi enhle, izintengo ezifanele kanye nemiklamo esesitayeleni, okuthengiswayo kwethu kusetshenziswa kakhulu ebuhleni nakwezinye izimboni. Imikhiqizo yethu nezisombululo zibonwa kabanzi futhi zethenjwa ngabasebenzisi futhi zingahlangabezana nezidingo eziguqukayo zezomnotho nezenhlalo.

SiC enamathela graphite MOCVD Wafer abathwali

Wonke ama-susceptors ethu enziwe nge-graphite ye-isostatic ephezulu. Zuza ekuhlanzekeni okuphezulu kwamagraphite ethu - athuthukiswe ikakhulukazi izinqubo eziyinselele ezifana ne-epitaxy, ukukhula kwekristalu, ukufakwa kwe-ion kanye nokufakwa kwe-plasma, kanye nokukhiqizwa kwama-chips e-LED.

Incazelo Yomkhiqizo
Ukufakwa kwe-SiC ye-Graphite substrate yezinhlelo zokusebenza ze-Semiconductor kukhiqiza ingxenye enobumsulwa obuphakeme kanye nokumelana nomoya we-oxidizing.
I-CVD SiC noma i-CVI SiC isetshenziswa kuGraphite yezingxenye zokuklama ezilula noma eziyinkimbinkimbi. Ukumboza kungasetshenziswa ngobukhulu obuhlukahlukene kanye nezingxenye ezinkulu kakhulu.

Inhlanganisela

SiC enamathela graphite MOCVD Wafer abathwali

Izinzuzo ezikhethekile ze-SiC-coated graphite susceptors zihlanganisa ukuhlanzeka okuphezulu kakhulu, ukunamathela okufana nempilo yesevisi enhle kakhulu. Futhi banokuphikiswa okuphezulu kwamakhemikhali kanye nezakhiwo zokuzinza kokushisa.

Sigcina ukubekezelelana okuseduze kakhulu lapho sisebenzisa i-SiC coating, sisebenzisa ukunemba okuphezulu kwemishini ukuze siqinisekise iphrofayili ye-susceptor efanayo. Siphinde sikhiqize izinto ezinezakhiwo ezifanelekile zokumelana nogesi ukuze zisetshenziswe kumasistimu ashisayo ashisayo. Zonke izingxenye eziqediwe ziza nesitifiketi sokuhambisana nobumsulwa nesilinganiselo.

Isicelo:

Izici:
· I-Thermal Shock Resistance enhle kakhulu
· Ukumelana Nokushaqeka Okuhle Kakhulu Komzimba
· Excellent Chemical Resistance
· Super High Purity
· Ukutholakala kokuthi I-Complex Shape
· Isebenziseka ngaphansi kwe-Oxidizing AtmosphereIzici Ezijwayelekile Ze-Base Graphite Material:

Ukuminyana Okubonakalayo:	1.85 g/cm3
Ukungazweli Kagesi:	11 μΩm
I-Flexural Strenth:	49 MPa (500kgf/cm2)
Ukuqina Kwasogwini:	58
Umlotha:	<5ppm
I-Thermal Conductivity:	116 W/mK (100 kcal/mhr-℃)

Empeleni kuyindlela enhle yokuthuthukisa imikhiqizo yethu nezixazululo nokulungisa. Umgomo wethu kufanele kube ukukhiqiza imikhiqizo eqanjiwe nezisombululo kumakhasimende sisebenzisa isipiliyoni sokusebenza esihle se-Wholesale OEM/ODM GaN-Basedepitaxial ku-Sic Substrates 4′′, Sigxila ekwakhiweni komkhiqizo wethu futhi sihlanganiswe nezinkulumo eziningi ezinokuhlangenwe nakho kanye nemishini yezinga lokuqala. . Izimpahla zethu okufanele ube nazo.
I-OEM/ODM Isitolo esidayisa yonke impahlaI-China GaN Substrates ne-GaN Film, Ngobubanzi obubanzi, ikhwalithi enhle, izintengo ezifanele kanye nemiklamo esesitayeleni, okuthengiswayo kwethu kusetshenziswa kakhulu ebuhleni nakwezinye izimboni. Imikhiqizo yethu nezisombululo zibonwa kabanzi futhi zethenjwa ngabasebenzisi futhi zingahlangabezana nezidingo eziguqukayo zezomnotho nezenhlalo.