I-GaN Epitaxy esekwe ku-silicon

Isithombe Esifakiwe se-GaN Epitaxy esisekelwe ku-silicon

Incazelo emfushane:

Indawo Yomsuka:China

Isakhiwo Sekristalu:Isigaba se-FCCβ

Ukuminyana:3.21 g/cm

Ukuqina:2500 amaVickers

Usayizi Wokusanhlamvu:2 ~ 10μm

I-Chemical Purity:99.99995%

Amandla Okushisa:640J·kg-1·K-1

I-Sublimation Temperature:2700 ℃

Amandla E-Felexural:415 Mpa (RT 4-Point)

I-Young's Modulus:430 Gpa (4pt bend, 1300℃)

Ukunwetshwa kwe-Thermal (CTE):4.5 10-6K-1

I-Thermal conductivity:300 (W/mK)

Thumela i-imeyili kithi Landa njenge-PDF

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Incazelo Yomkhiqizo

Inkampani yethu ihlinzeka ngezinsizakalo zenqubo yokuhlanganisa ye-SiC ngendlela ye-CVD ebusweni be-graphite, i-ceramics nezinye izinto, ukuze amagesi akhethekile aqukethe i-carbon ne-silicon aphendule ekushiseni okuphezulu ukuze athole ukuhlanzeka okuphezulu kwama-molecule e-SiC, ama-molecule afakwe ebusweni bezinto ezimboziwe, ukwakha isendlalelo sokuzivikela se-SIC.

Izici eziyinhloko:

1. Ukumelana nokushisa okuphezulu kwe-oxidation:

ukumelana ne-oxidation kusekuhle kakhulu lapho izinga lokushisa liphezulu njenge-1600 C.

2. Ukuhlanzeka okuphezulu : okwenziwe yi-chemical vapor deposition ngaphansi kwesimo sokushisa okuphezulu kwe-chlorination.

3. Ukumelana nokuguguleka: ubulukhuni obuphezulu, indawo ehlangene, izinhlayiya ezinhle.

4. Ukumelana nokugqwala: i-asidi, i-alkali, usawoti kanye nama-organic reagents.

Ukucaciswa Okuyinhloko kwe-CVD-SIC Coating

Izakhiwo ze-SiC-CVD
Isakhiwo Sekristalu	I-FCC β isigaba
Ukuminyana	g/cm³	3.21
Ukuqina	Vickers ubulukhuni	2500
Usayizi Wokusanhlamvu	μm	2~10
I-Chemical Purity	%	99.99995
Amandla Okushisa	J·kg-1 ·K-1	640
I-Sublimation Temperature	℃	2700
Amandla E-Felexural	I-MPa (RT 4-point)	415
I-Young's Modulus	I-Gpa (4pt bend, 1300℃)	430
I-Thermal Expansion (CTE)	10-6K-1	4.5
I-Thermal conductivity	(W/mK)	300