I-SiC Coated Barrel Susceptor

I-SiC Coated Barel Susceptor Isithombe Esifakiwe

Incazelo emfushane:

I-VET Energy SiC Coated Barrel Susceptor iwumkhiqizo osebenza kahle kakhulu oklanyelwe ukunikeza ukusebenza okungaguquki nokuthembekile esikhathini eside. Inokumelana nokushisa okuhle kakhulu nokufana okushisayo, ukuhlanzeka okuphezulu, ukumelana nokuguguleka, okuyenza ibe yisixazululo esiphelele sezinhlelo zokusebenza zokucubungula ama-wafer.

Indawo Yomsuka:China

Isakhiwo Sekristalu:Isigaba se-FCCβ

Ukuminyana :3.21 g/cm;

Ukuqina:2500 Vickers;

Usayizi Wokusanhlamvu:2~10μm;

I-Chemical Purity:99.99995%;

Amandla Okushisa :640J·kg-1·K-1;

I-Sublimation Temperature:2700 ℃;

Amandla E-Felexural :415 Mpa (RT 4-Point);

I-Young's Modulus:430 Gpa (4pt bend, 1300℃);

Ukunwetshwa kwe-Thermal (CTE) :4.5 10-6K-1;

I-Thermal Conductivity:300 (W/MK);

Thumela i-imeyili kithi Landa njenge-PDF

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

I-barrel susceptor is a ukhiyeingxenye esetshenziswa ezinqubweni ezihlukahlukene zokukhiqiza ama-semiconductor.Sisebenzisa ubuchwepheshe bethu obunelungelo lobunikazi ukwenza iumgqomo susceptorngeubumsulwa obukhulu kakhulu,kuhleenamathelaukufanakanye nempilo yesevisi enhle kakhulu, kanye neukumelana namakhemikhali aphezulu kanye nezakhiwo zokuzinza ezishisayo.

I-VET Energy yiyona iumkhiqizi wangempela wemikhiqizo eyenziwe ngokwezifiso ye-graphite ne-silicon carbide ene-CVD coating,angahlinzekaezihlukahlukeneizingxenye ezenziwe ngokwezifiso ze-semiconductor kanye nemboni ye-photovoltaic. OIthimba le-ur lochwepheshe livela ezikhungweni eziphezulu zocwaningo lwasekhaya, linganikeza izixazululo zempahla echwepheshilekwakho.

Siyaqhubeka nokuthuthukisa izinqubo ezithuthukile ukuze sinikeze izinto ezithuthuke kakhulu,futhibenze ubuchwepheshe obukhethekile obunelungelo lobunikazi, obungenza ukubopha phakathi kokumboza ne-substrate kuqine futhi kungabi lula ukuhlukaniswa.

Fukudla kwemikhiqizo yethu:

1. Ukumelana nokushisa okuphezulu kwe-oxidation kufika ku-1700℃.
2. Ukuhlanzeka okuphezulu kanyeukufana okushisayo
3. Ukumelana nokugqwala okuhle kakhulu: i-asidi, i-alkali, usawoti kanye nama-organic reagents.
4. Ukuqina okuphezulu, indawo ehlangene, izinhlayiya ezinhle.
5. Impilo yesevisi ende futhi ihlala isikhathi eside

I-CVD SiC薄膜基本物理性能 Izakhiwo eziyisisekelo ze-CVD SiCenamathela
性质 / Impahla	典型数值 / Inani Elijwayelekile
晶体结构 / Isakhiwo seCrystal	I-FCC β isigaba多晶，主要為（111）取向
密度 / Ukuminyana	3.21 g/cm³
硬度 / Ukuqina	2500 维氏硬度 (500g umthwalo)
晶粒大小 / Uhlamvu SiZe	2 ~ 10μm
纯度 / Ukuhlanzeka Kwamakhemikhali	99.99995%
热容 / Amandla Okushisa	640 J·kg^-1·K^-1
升华温度 / I-Sublimation Temperature	2700 ℃
抗弯强度 / Amandla Aguquguqukayo	415 MPa RT 4-iphoyinti
杨氏模量 / I-Modulus Encane	430 Gpa 4pt ukugoba, 1300℃
导热系数 / ThermalI-Conductivity	300Wm^-1·K^-1
热膨胀系数 / Ukwandiswa Kokushisa (CTE)	4.5×10^-6K^-1