I-SiC Coated Graphite Carriers, i-sic coating, i-SiC embozwe nge-Graphite substrate ye-Semiconductor

I-silicon carbide ihlanganiswei-graphite disk iwukulungisa ungqimba oluvikelayo lwe-silicon carbide ebusweni begraphite ngokufaka umhwamuko ongokoqobo noma wamakhemikhali kanye nokufafaza. Ungqimba olulungisiwe lwe-silicon carbide protective lungahlanganiswa ngokuqinile ne-graphite matrix, lenze ubuso besisekelo segraphite buminyene futhi bungabi nama-voids, okunikeza izakhiwo ezikhethekile ze-graphite matrix, okuhlanganisa ukumelana ne-oxidation, ukumelana ne-asidi ne-alkali, ukumelana nokuguguleka, ukumelana nokugqwala, njll. Njengamanje, i-Gan coating ingenye yezingxenye ezingcono kakhulu zokukhula kwe-epitaxial ye-silicon carbide.

I-Silicon carbide semiconductor iyisici esiyinhloko se-semiconductor esanda kuthuthukiswa ye-wide band gap. Imishini yayo inezici zokumelana nokushisa okuphezulu, ukumelana nomthamo omkhulu wama-voltage, imvamisa ephezulu, amandla aphezulu kanye nokumelana nemisebe. Inezinzuzo zejubane lokushintsha ngokushesha nokusebenza kahle okuphezulu. Inganciphisa kakhulu ukusetshenziswa kwamandla omkhiqizo, ithuthukise ukusebenza kahle kokuguqulwa kwamandla futhi yehlise umthamo womkhiqizo. Isetshenziswa kakhulu ekuxhumaneni kwe-5g, imboni yezokuvikela kazwelonke kanye nezempi Inkundla ye-RF emelwe i-aerospace kanye nenkundla ye-electronics yamandla emelwe izimoto zamandla amasha kanye "nengqalasizinda entsha" inamathemba emakethe acacile nabonakalayo kokubili emikhakheni yomphakathi neyezempi.

I-Silicon carbide substrate iyisici esiyinhloko se-semiconductor esanda kuthuthukiswa ye-wide band gap. I-Silicon carbide substrate isetshenziswa kakhulu kuma-microwave electronics, amandla kagesi nezinye izinkambu. Isemaphethelweni ochungechunge lwemboni ye-wide band gap semiconductor futhi iyisisetshenziswa esibalulekile esiyinhloko.I-Silicon carbide substrate ingahlukaniswa ngezinhlobo ezimbili: i-semi insulating ne-conductive. Phakathi kwazo, i-semi insulating silicon carbide substrate ine-resistivity ephezulu (ukumelana ≥ 105 Ω· cm). I-Semi insulating substrate ehlanganiswe ne-heterogeneous gallium nitride epitaxial sheet ingasetshenziswa njengempahla yemishini ye-RF, esetshenziswa kakhulu ekuxhumaneni kwe-5g, ukuvikela izwe kanye nemboni yezempi ezigcawini ezingenhla; Enye i-conductive silicon carbide substrate ene-resistivity ephansi (ububanzi bokumelana bungu-15 ~ 30m Ω· cm). I-homogeneous epitaxy ye-conductive silicon carbide substrate ne-silicon carbide ingasetshenziswa njengezisetshenziswa zamadivayisi kagesi. Izimo eziyinhloko zokufaka isicelo izimoto zikagesi, izinhlelo zamandla nezinye izinkambu