Indlela entsha inikeza ama-transistors aqinile: Ukukhula kwe-Transmorphic epitaxial kwezingqimba ze-AlN nucleation kuma-SiC substrates ama-transistors ama-GaN amancane aqhekekile kakhulu - ScienceDaily

Indlela entsha yokuhlanganisa izendlalelo zama-semiconductors azacile njengama-nanometer ambalwa ayiphumeleli nje ekutholweni kwesayensi kuphela kodwa futhi nohlobo olusha lwe-transistor yamadivayisi kagesi anamandla amakhulu. Umphumela, owanyatheliswa ku-Applied Physics Letters, uye wavusa isithakazelo esikhulu.

Impumelelo ingumphumela wokubambisana okuseduze phakathi kososayensi base-Linkoping University kanye ne-SweGaN, inkampani ephuma phambili yocwaningo lwesayensi yezinto zokwakha e-LiU. Inkampani ikhiqiza izingxenye ze-elekthronikhi ezenziwe zafanelana ne-gallium nitride.

I-Gallium nitride, i-GaN, i-semiconductor esetshenziselwa ama-diode asebenza kahle akhipha ukukhanya. Nokho, ingase ibe usizo kwezinye izinhlelo zokusebenza, njengama-transistors, njengoba ikwazi ukumelana namazinga okushisa aphezulu namandla amanje kunamanye ama-semiconductors amaningi. Lezi yizakhiwo ezibalulekile zezingxenye ze-elekthronikhi zesikhathi esizayo, hhayi okungenani kulezo ezisetshenziswa ezimotweni zikagesi.

Umhwamuko we-Gallium nitride uvunyelwe ukujiya ku-wafer ye-silicon carbide, wenze uqweqwe oluncane. Indlela okutshalwa ngayo i-crystalline material eyodwa ku-substrate yenye yaziwa ngokuthi “i-epitaxy.” Indlela ivame ukusetshenziswa embonini ye-semiconductor njengoba inikeza inkululeko enkulu ekunqumeni kokubili ukwakheka kwekristalu kanye nokwakheka kwamakhemikhali efilimu ye-nanometer eyakhiwe.

Inhlanganisela ye-gallium nitride, i-GaN, ne-silicon carbide, i-SiC (kokubili engakwazi ukumelana nezinkambu eziqinile zikagesi), iqinisekisa ukuthi ama-circuits afanele izicelo lapho amandla aphezulu adingeka khona.

Ukulingana kwendawo phakathi kwezinto ezimbili zekristalu, i-gallium nitride ne-silicon carbide, nokho, kubi. Ama-athomu agcina engahambelani, okuholela ekuhlulekeni kwe-transistor. Lokhu kuye kwasingathwa ucwaningo, okwathi ngokuhamba kwesikhathi kwaholela esixazululweni sezentengiselwano, lapho ungqimba oluncane nakakhulu lwe-aluminium nitride lubekwe phakathi kwalezi zingqimba ezimbili.

Onjiniyela e-SweGaN babone ngenhlanhla ukuthi ama-transistors abo angabhekana namandla enkundla ephakeme kakhulu kunalokho abebekulindele, futhi ekuqaleni abakwazanga ukuqonda ukuthi kungani. Impendulo ingatholakala ezingeni le-athomu - ezindaweni ezimbalwa ezibalulekile ezimaphakathi ngaphakathi kwezingxenye.

Abacwaningi e-LiU kanye ne-SweGaN, eholwa u-Lars Hultman no-Jun Lu bakwa-LiU, abethula ku-Applied Physics Letters incazelo yalesi simo, futhi bachaza indlela yokwenza ama-transistors anamandla amakhulu ngisho nangaphezulu okumelana nama-voltage aphezulu.

Ososayensi bathole indlela yokukhula ye-epitaxial eyayingaziwa ngaphambili abayiqambe ngokuthi “ukukhula kwe-transmorphic epitaxial.” Kubangela ukuthi ubunzima obuphakathi kwezingqimba ezihlukene bumunceke kancane kancane kuzo zonke izingqimba ezimbalwa zama-athomu. Lokhu kusho ukuthi zingakhulisa izendlalelo ezimbili, i-gallium nitride ne-aluminium nitride, ku-silicon carbide ngendlela ukuze kulawulwe ezingeni le-athomu ukuthi izendlalelo zihlobana kanjani kwenye into ebonakalayo. Elabhorethri baye babonisa ukuthi impahla imelana nama-voltage aphezulu, afinyelela ku-1800 V. Uma i-voltage enjalo ibibekwe engxenyeni yakudala esekelwe ku-silicon, izinhlansi zizoqala ukundiza futhi i-transistor izobhujiswa.

“Sihalalisela i-SweGaN njengoba isiqala ukumaketha le nto esunguliwe. Ikhombisa ukubambisana okusebenzayo kanye nokusetshenziswa kwemiphumela yocwaningo emphakathini. Ngenxa yokuxhumana esinakho nozakwethu bangaphambili asebesebenzela inkampani, ucwaningo lwethu ngokushesha lunomthelela nangaphandle kwezemfundo,” kusho uLars Hultman.

Izinto zokwakha ezinikezwe yi-Linkoping University. Eyokuqala ibhalwe nguMonica Westman Svenselius. Qaphela: Okuqukethwe kungase kuhlelwe ngesitayela nobude.

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