I-BJT, i-CMOS, i-DMOS nobunye ubuchwepheshe benqubo ye-semiconductor

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Njengoba izinqubo zokukhiqiza ama-semiconductor ziqhubeka nokwenza impumelelo, isitatimende esidumile esibizwa ngokuthi "Umthetho kaMoore" besilokhu sizungeza embonini. Yahlongozwa u-Gordon Moore, omunye wabasunguli be-Intel, ngo-1965. Ingqikithi yayo ithi: inani lama-transistors angahlaliswa kusekethe edidiyelwe lizophinda kabili cishe njalo ezinyangeni eziyi-18 kuya kwezingu-24. Lo mthetho awukona nje ukuhlaziya kanye nokubikezela kwentuthuko yembonini, kodwa futhi umfutho wokuthuthukiswa kwezinqubo zokukhiqiza i-semiconductor - konke ukwenza ama-transistors ngosayizi omncane nokusebenza okuzinzile. Kusukela ngeminyaka yawo-1950 kuze kube manje, cishe iminyaka engama-70, ingqikithi yobuchwepheshe benqubo ye-BJT, MOSFET, CMOS, DMOS, ne-hybrid BiCMOS kanye ne-BCD senziwe.

 

1. BJT

I-Bipolar junction transistor (BJT), eyaziwa ngokuthi yi-triode. Ukugeleza kokushaja ku-transistor ngokuyinhloko kungenxa yokusabalalisa kanye nokunyakaza kokukhukhuleka kwabathwali ekuhlanganeni kwe-PN. Njengoba kuhilela ukugeleza kwakho kokubili ama-electron nezimbobo, kubizwa ngokuthi i-bipolar device.

Uma sibheka emuva emlandweni wokuzalwa kwayo. Ngenxa yomqondo wokushintsha ama-vacuum triodes afake izikhulisa-zwi eziqinile, u-Shockley uhlongoze ukwenza ucwaningo oluyisisekelo kuma-semiconductors ehlobo lika-1945. Engxenyeni yesibili ka-1945, iBell Labs yasungula iqembu locwaningo lwe-solid state physics eliholwa nguShockley. Kuleli qembu, azikho izazi ze-physics kuphela, kodwa futhi onjiniyela besifunda kanye namakhemikhali, kuhlanganise noBardeen, isazi sefiziksi yethiyori, noBrattain, isazi sefiziksi esihlolayo. NgoZibandlela ka-1947, isenzakalo esathathwa njengengqopha-mlando yizizukulwane zakamuva senzeka ngokumangalisayo - uBardeen noBrattain basungula ngempumelelo i-germanium point-contact transistor yokuqala emhlabeni enokukhulisa kwamanje.

I-transistor yokuqala kaBardeen noBrattain yokuxhumana

Ngokushesha ngemva kwalokho, u-Shockley wasungula i-bipolar junction transistor ngo-1948. Waphakamisa ukuthi i-transistor ingakhiwa izingxenye ezimbili ze-pn, eyodwa ichemile eya phambili futhi enye ichemile, futhi wathola ilungelo lobunikazi ngoJuni 1948. Ngo-1949, washicilela ithiyori enemininingwane eminingi ukusebenza kwe-transistor ye-junction. Eminyakeni engaphezu kwemibili kamuva, ososayensi nonjiniyela eBell Labs bathuthukise inqubo yokufeza ukukhiqizwa okukhulu kwama-junction transistors (ingqopha-mlando ngo-1951), bevula inkathi entsha yobuchwepheshe be-elekthronikhi. Ngokubona amagalelo abo ekusungulweni kwama-transistors, u-Shockley, uBardeen noBrattain ngokuhlanganyela bawina uMklomelo KaNobel ku-Physics we-1956.

Umdwebo olula wesakhiwo we-NPN bipolar junction transistor

Mayelana nesakhiwo se-bipolar junction transistors, ama-BJT ajwayelekile yi-NPN ne-PNP. Isakhiwo sangaphakathi esinemininingwane sikhonjiswe esithombeni esingezansi. Isifunda se-semiconductor yokungcola esihambisana ne-emitter yisifunda esikhipha i-emitter, esinokugxila okuphezulu kwe-doping; isifunda se-semiconductor yokungcola esihambisana nesisekelo yisifunda esiyisisekelo, esinobubanzi obuncane kakhulu kanye nokugxila kwe-doping okuphansi kakhulu; isifunda se-semiconductor yokungcola esihambisana nomqoqi yisifunda somqoqi, esinendawo enkulu kanye ne-doping concentration ephansi kakhulu.

Izinzuzo zobuchwepheshe be-BJT yijubane eliphezulu lokuphendula, i-transconductance ephezulu (izinguquko ze-voltage yokufaka zihambisana nezinguquko ezinkulu zamanje eziphumayo), umsindo ophansi, ukunemba okuphezulu kwe-analog, nekhono lokushayela eliqinile lamanje; ukungalungi ukuhlanganiswa okuphansi (ukujula okuqondile akukwazi ukuncishiswa ngosayizi we-lateral) kanye nokusetshenziswa kwamandla okuphezulu.

 

2. MOS

I-Metal Oxide Semiconductor Field Effect Transistor (i-Metal Oxide Semiconductor FET), okungukuthi, i-transistor yomphumela wenkundla elawula ukushintshwa kwesiteshi sokuhambisa semiconductor (S) ngokusebenzisa i-voltage esangweni lesendlalelo sensimbi (M-metal aluminium) kanye umthombo ngongqimba lwe-oxide (O-insulating layer SiO2) ukuze ukhiqize umphumela wenkambu kagesi. Njengoba isango kanye nomthombo, kanye nesango kanye ne-drain kuhlukaniswe ungqimba oluvikelayo lwe-SiO2, i-MOSFET ibizwa nangokuthi i-insulated gate field effect transistor. Ngo-1962, iBell Labs yamemezela ngokusemthethweni intuthuko eyimpumelelo, eyaba yingqophamlando ebaluleke kakhulu emlandweni wokuthuthukiswa kwe-semiconductor futhi yabeka ngokuqondile isisekelo sobuchwepheshe sokufika kwenkumbulo ye-semiconductor.

I-MOSFET ingahlukaniswa ngesiteshi esingu-P kanye nesiteshi esingu-N ngokusho kohlobo lwesiteshi esiqhutshwayo. Ngokusho kwe-amplitude ye-voltage yesango, ingahlukaniswa: uhlobo lokunciphisa-lapho i-voltage yesango ingu-zero, kukhona umzila ohambayo phakathi kwe-drain kanye nomthombo; uhlobo oluthuthukisiwe lwamadivayisi wesiteshi esingu-N (P), kunesiteshi sokuqondisa kuphela lapho i-voltage yesango inkulu kunoziro (ngaphansi), futhi amandla e-MOSFET ngokuyinhloko awuhlobo lokuthuthukisa isiteshi esingu-N.

Umehluko omkhulu phakathi kwe-MOS ne-triode uhlanganisa kodwa awukhawulelwe kumaphuzu alandelayo:

-Ama-Triodes amadivaysi e-bipolar ngoba kokubili abathwali abaningi nabancane babamba iqhaza ekuqhubeni ngesikhathi esisodwa; kuyilapho i-MOS iqhuba ugesi kuphela ngabathwali abaningi kuma-semiconductors, futhi ibizwa nangokuthi i-unipolar transistor.
Ama-Triodes angamadivayisi alawulwa manje asebenzisa amandla aphezulu kakhulu; kuyilapho ama-MOSFET kungamadivayisi alawulwa amandla kagesi asebenzisa amandla amancane.
-Ama-Triodes ane-on-resistance enkulu, kuyilapho amashubhu e-MOS enokumelana okuncane, ama-milliohm angamakhulu ambalwa kuphela. Kumishini kagesi yamanje, amashubhu e-MOS ngokuvamile asetshenziswa njengamaswishi, ikakhulukazi ngenxa yokuthi ukusebenza kahle kwe-MOS kuphezulu uma kuqhathaniswa nama-triode.
-Ama-Triodes anezindleko ezizuzisa kakhulu, futhi amashubhu e-MOS abiza kakhulu.
-Kulezi zinsuku, amashubhu e-MOS asetshenziselwa ukufaka ama-triodes ezimweni eziningi. Kuphela kwezinye izimo ezinamandla aphansi noma ezingazweli amandla, sizosebenzisa ama-triodes ngokucabangela inzuzo yentengo.

3. CMOS

I-Complementary Metal Oxide Semiconductor: Ubuchwepheshe be-CMOS busebenzisa i-p-type ehambisanayo kanye ne-n-type metal oxide semiconductor transistors (ama-MOSFET) ukuze kwakhiwe izinto zikagesi namasekhethi anengqondo. Isibalo esilandelayo sibonisa isiguquli esivamile se-CMOS, esisetshenziselwa ukuguqulwa kwe-"1→0" noma "0→1".

Inombolo elandelayo iyisiphambano esijwayelekile se-CMOS. Uhlangothi lwesobunxele yi-NMS, kanti uhlangothi lwesokudla yi-PMOS. Izigxobo ze-G zama-MOS amabili zixhunywe ndawonye njengokufakwa kwesango elivamile, futhi izigxobo zika-D zixhunywe ndawonye njengokukhipha okujwayelekile kokukhipha amanzi. I-VDD ixhunywe kumthombo we-PMOS, futhi i-VSS ixhunywe kumthombo we-NMOS.

Ngo-1963, u-Wanlass no-Sah we-Fairchild Semiconductor basungula isifunda se-CMOS. Ngo-1968, i-American Radio Corporation (RCA) yakha umkhiqizo wokuqala wesekethe odidiyelwe we-CMOS, futhi kusukela lapho, isekethe ye-CMOS izuze intuthuko enkulu. Izinzuzo zayo ukusetshenziswa kwamandla okuphansi kanye nokuhlanganiswa okuphezulu (inqubo ye-STI/LOCOS ingathuthukisa ukuhlanganiswa); ububi bayo ubukhona bomphumela wokukhiya (i-PN junction reverse bias isetshenziswa njengokuzihlukanisa phakathi kwamashubhu e-MOS, futhi ukuphazamiseka kungakha kalula iluphu ethuthukisiwe futhi kushise isekethe).

 

4. DMOS

I-Double-Diffused Metal Oxide Semiconductor: Ngokufanayo nesakhiwo samadivayisi ajwayelekile e-MOSFET, futhi inomthombo, i-drain, isango namanye ama-electrode, kodwa i-voltage yokuqhekeka kokuphela kokukhipha amanzi iphezulu. Kusetshenziswa inqubo yokusabalalisa kabili.

Isibalo esingezansi sibonisa ukuphambana kwe-DMOS yesiteshi esijwayelekile. Lolu hlobo lwedivayisi ye-DMOS ngokuvamile lusetshenziswa ezinhlelweni zokushintsha ohlangothini oluphansi, lapho umthombo we-MOSFET uxhumeke phansi. Ngaphezu kwalokho, kukhona i-DMOS yesiteshi. Lolu hlobo lwedivayisi ye-DMOS luvame ukusetshenziswa ezinhlelweni zokushintsha uhlangothi oluphezulu, lapho umthombo we-MOSFET uxhumeke ku-voltage ephozithivu. Ngokufanayo ne-CMOS, amadivayisi e-DMOS ahambisanayo asebenzisa i-N-channel kanye ne-P-channel MOSFETs ku-chip efanayo ukuze anikeze imisebenzi yokushintsha ehambisanayo.

Ngokuya ngokuqondisa kwesiteshi, i-DMOS ingahlukaniswa ibe izinhlobo ezimbili, okuyi-metal-diffused metal oxide semiconductor field effect transistor VDMOS (Vertical Double-Diffused MOSFET) kanye ne-lateral double-diffused metal oxide semiconductor field effect transistor LDMOS (Lateral Double -I-MOSFET ehlukanisiwe).

Amadivayisi e-VDMOS aklanywe ngeshaneli eqondile. Uma kuqhathaniswa nemishini yangemuva ye-DMOS, inamandla kagesi wokuwohloka aphezulu namandla okuphatha amanje, kodwa ukumelana nokumelana kusekukhulu uma kuqhathaniswa.

Amadivayisi e-LDMOS aklanywe ngesiteshi esiseceleni futhi angamadivayisi asymmetric we-MOSFET. Uma kuqhathaniswa namadivayisi e-DMOS aqondile, avumela ukumelana okuphansi kanye nesivinini sokushintsha ngokushesha.

Uma iqhathaniswa nama-MOSFET endabuko, i-DMOS inamandla okusebenza aphezulu kanye nokumelana okuphansi, ngakho isetshenziswa kakhulu kumishini kagesi enamandla amakhulu njengokushintshwa kwamandla, amathuluzi kagesi namadrayivu ezimoto zikagesi.

 

5. I-BiCMOS

I-Bipolar CMOS ubuchwepheshe obuhlanganisa i-CMOS namadivayisi we-bipolar ku-chip efanayo ngesikhathi esisodwa. Umqondo wayo oyisisekelo ukusebenzisa amadivayisi e-CMOS njengesekhethi yeyunithi eyinhloko, futhi wengeze amadivaysi e-bipolar noma amasekhethi lapho imithwalo emikhulu ye-capacitive idingeka ukuthi ishayelwe. Ngakho-ke, amasekhethi e-BiCMOS anezinzuzo zokuhlanganiswa okuphezulu kanye nokusetshenziswa kwamandla okuphansi kwamasekhethi e-CMOS, kanye nezinzuzo zejubane eliphezulu namandla amanje okushayela amasekhethi e-BJT.

Ubuchwepheshe be-STMicroelectronics' be-BiCMOS SiGe (silicon germanium) buhlanganisa i-RF, izingxenye ze-analog nedijithali ku-chip eyodwa, okunganciphisa kakhulu inani lezingxenye zangaphandle futhi kuthuthukise ukusetshenziswa kwamandla.

 

6. BCD

I-Bipolar-CMOS-DMOS, lobu buchwepheshe bungenza amadivaysi e-bipolar, CMOS kanye ne-DMOS ku-chip efanayo, ebizwa ngokuthi inqubo ye-BCD, eyasungulwa ngempumelelo i-STMicroelectronics (ST) ngo-1986.

I-Bipolar ifanele amasekhethi e-analog, i-CMOS ifanele amasekhethi edijithali nanengqondo, kanti i-DMOS ifanele amandla namadivayisi anamandla kagesi. I-BCD ihlanganisa izinzuzo zalezi zintathu. Ngemuva kokuthuthukiswa okuqhubekayo, i-BCD isetshenziswa kakhulu emikhiqizweni emikhakheni yokuphathwa kwamandla, ukutholwa kwedatha ye-analog kanye nama-actuator amandla. Ngokusho kwewebhusayithi esemthethweni ye-ST, inqubo yokuvuthwa kwe-BCD isacishe ibe ngu-100nm, i-90nm isekuklanyweni kwe-prototype, kanti ubuchwepheshe be-40nmBCD bungobemikhiqizo yayo yesizukulwane esilandelayo esathuthukiswayo.