Imisebenzi esemqoka yeisikebhe se-silicon carbideukwesekwa kanye nokusekelwa kwesikebhe se-quartz kuyafana.Isikebhe se-silicon carbideukwesekwa kunokusebenza okuhle kakhulu kodwa intengo ephezulu. Ihlanganisa obunye ubudlelwano nokusekelwa kwesikebhe se-quartz kumishini yokucubungula ibhethri enezimo zokusebenza ezinzima (njengemishini ye-LPCVD kanye nemishini yokusabalalisa i-boron). Emishinini yokucubungula ibhethri enezimo zokusebenza ezijwayelekile, ngenxa yobudlelwano bamanani, i-silicon carbide nokusekelwa kwesikebhe se-quartz kuba izigaba ezihlala ndawonye neziqhudelanayo.
① Ubudlelwano bokushintsha ku-LPCVD kanye nemishini yokusabalalisa i-boron
Imishini ye-LPCVD isetshenziselwa i-oxidation ye-cell tunneling oxidation kanye nenqubo yokulungiselela ungqimba lwe-polysilicon ehlanganisiwe. Umgomo wokusebenza:
Ngaphansi komkhathi wokucindezela okuphansi, kuhlanganiswe nezinga lokushisa elifanele, ukusabela kwamakhemikhali kanye nokwakheka kwefilimu yokubeka kufinyelelwa ukuze kulungiswe ungqimba lwe-ultra-thin tunnel oxide nefilimu ye-polysilicon. Ku-tunneling oxidation kanye nenqubo yokulungiselela ungqimba lwe-polysilicon ene-doped, ukusekelwa kwesikebhe kunezinga lokushisa eliphezulu lokusebenza futhi ifilimu ye-silicon izofakwa phezulu. I-coefficient yokwandisa ukushisa kwe-quartz ihluke kakhulu kuleyo ye-silicon. Uma isetshenziswe kule nqubo engenhla, kuyadingeka ukuthi ugcobe njalo futhi ukhiphe i-silicon efakwe phezulu ukuze uvimbele ukusekelwa kwesikebhe se-quartz ekuqhekekeni ngenxa yokwanda nokunciphisa okushisayo ngenxa ye-coefficient ehlukile yokwandisa ukushisa kusuka ku-silicon. Ngenxa yokukhethwa okuvamisile namandla aphansi ezinga lokushisa eliphezulu, umbambi wesikebhe se-quartz unokuphila okufushane futhi uvamise ukushintshwa endaweni ye-oxidation yomhubhe kanye nenqubo yokulungiselela ungqimba lwe-polysilicon ene-doped, okwandisa kakhulu izindleko zokukhiqiza zeseli yebhethri. I-coefficient yokunweba yei-silicon carbideisondelene naleyo ye-silicon. Okuhlanganisiweisikebhe se-silicon carbideisibambi asidingi pickling emhubheni oxidation kanye doped polysilicon ungqimba inqubo yokulungiselela. Inamandla aphezulu okushisa nempilo ende yesevisi. Kuyindlela ehlukile yomnikazi wesikebhe se-quartz.
Imishini yokunweba ye-Boron isetshenziselwa ikakhulukazi inqubo yokwenza izakhi ze-boron ku-N-uhlobo lwe-silicon wafer substrate yeseli yebhethri ukuze kulungiswe i-emitter yohlobo lwe-P ukuze yakhe ukuhlangana kwe-PN. Umgomo wokusebenza uwukubona ukusabela kwamakhemikhali kanye nokwakheka kwefilimu ye-molecular deposition endaweni enezinga lokushisa eliphezulu. Ngemva kokwakhiwa kwefilimu, ingasatshalaliswa ngokushisisa izinga lokushisa eliphezulu ukuze ibone umsebenzi we-doping we-silicon wafer surface. Ngenxa yokushisa okuphezulu okusebenzayo kwemishini yokwandisa i-boron, umnikazi wesikebhe se-quartz unamandla aphansi ezinga lokushisa eliphezulu kanye nempilo emfushane yesevisi kumishini yokwandisa i-boron. Okuhlanganisiweisikebhe se-silicon carbideisibambi sinamandla aphezulu ezinga lokushisa eliphezulu futhi siyindlela enhle yokuphatha isikebhe se-quartz enqubweni yokwandisa i-boron.
② Ubudlelwano bokushintsha kwezinye izinto zokusebenza zenqubo
Izisekelo zesikebhe ze-SiC zinamandla okukhiqiza aqinile nokusebenza okuhle kakhulu. Amanani abo ngokuvamile aphezulu kunalawo asekela izikebhe ze-quartz. Ezimweni ezijwayelekile zokusebenza zemishini yokucubungula amaseli, umehluko empilweni yesevisi phakathi kwezisekelo zesikebhe se-SiC nezisekelo zesikebhe se-quartz mncane. Amakhasimende aphansi kakhulu aqhathanisa futhi akhethe phakathi kwentengo nokusebenza ngokusekelwe ezinqubweni zawo kanye nezidingo. Izisekelo zesikebhe se-SiC kanye nezisekelo zesikebhe se-quartz sezihlala ndawonye futhi ziyaqhudelana. Kodwa-ke, imajini yenzuzo eyisamba yezisekelo zesikebhe se-SiC iphezulu kakhulu njengamanje. Ngokwehla kwezindleko zokukhiqiza izisekelo zesikebhe se-SiC, uma intengo yokuthengisa yesikebhe se-SiC isekela iyancipha ngokuqhubekayo, izophinde idale ukuncintisana okukhulu kuzisekeli zesikebhe se-quartz.
Isilinganiso sokusetshenziswa
Umzila wobuchwepheshe beseli ngokuyinhloko ubuchwepheshe be-PERC kanye nobuchwepheshe be-TOPCon. Isabelo semakethe sobuchwepheshe be-PERC singama-88%, kanti isabelo semakethe sobuchwepheshe be-TOPCon singama-8.3%. Isabelo semakethe esihlanganisiwe salokhu okubili singama-96.30%.
Njengoba kuboniswe emfanekisweni ongezansi:
Kubuchwepheshe be-PERC, izisekelo zesikebhe ziyadingeka ekusakazeni kwe-phosphorus ngaphambili nezinqubo zokudonsa. Kubuchwepheshe be-TOPCon, izisekelo zezikebhe ziyadingeka ekusakazeni kwe-boron ngaphambili, i-LPCVD, ukusabalalisa kwe-phosphorus emuva kanye nezinqubo zokudonsa. Njengamanje, izisekelo zesikebhe se-silicon carbide zisetshenziswa kakhulu kwinqubo ye-LPCVD yobuchwepheshe be-TOPCon, futhi ukusetshenziswa kwazo enqubweni yokusabalalisa i-boron kuye kwaqinisekiswa kakhulu.
Umfanekiso Isicelo sosekelo lwesikebhe kunqubo yokucubungula iseli
Qaphela: Ngemva kokumbozwa ngaphambili nangemuva kobuchwepheshe be-PERC kanye ne-TOPCon, zisekhona izixhumanisi ezifana nokuphrinta isikrini, i-sintering nokuhlola nokuhlunga, okungabandakanyi ukusetshenziswa kwezisekelo zesikebhe futhi azikho ohlwini olungenhla.
Isikhathi sokuthumela: Oct-15-2024