I-Silicon carbide (i-SiC) iyinto entsha ehlanganisiwe ye-semiconductor. I-Silicon carbide inegebe elikhulu lebhande (cishe izikhathi ze-silicon izikhathi ezi-3), amandla ensimu abalulekile (cishe izikhathi ezingu-10 ze-silicon), i-conductivity ephezulu yokushisa (cishe izikhathi ezi-3 ze-silicon). Kuyinto ebalulekile yesizukulwane esilandelayo semiconductor. Izembatho ze-SiC zisetshenziswa kabanzi embonini ye-semiconductor kanye ne-solar photovoltaics. Ikakhulukazi, ama-susceptors asetshenziswa ekukhuleni kwe-epitaxial kwama-LED kanye ne-Si single crystal epitaxy adinga ukusetshenziswa kwe-SiC coating. Ngenxa yokukhula okuqinile kwama-LED embonini yokukhanyisa nokubonisa, kanye nokuthuthukiswa okunamandla kwemboni ye-semiconductor,SiC enamathela umkhiqizoamathemba mahle kakhulu.
INKINGA YOKUSEBENZA
Ukuhlanzeka, Isakhiwo se-SEM, ukuhlaziywa kokuqina kweUkufakwa kwe-SiC
Ukuhlanzeka kwezingubo ze-SiC ku-graphite ngokusebenzisa i-CVD kuphezulu njenge-99.9995%. Isakhiwo sayo yi-fcc. Amafilimu e-SiC ahlanganiswe ku-graphite (111) aqondiswe njengoba kuboniswe kudatha ye-XRD (Fig.1) ebonisa ikhwalithi yayo ephezulu ye-crystalline. Ubukhulu befilimu ye-SiC bufana kakhulu njengoba kuboniswe ku-Fig. 2.
Umfanekiso 2: umfaniswano wokujiya wamafilimu e-SiC i-SEM ne-XRD yefilimu ye-beta-SiC ku-graphite
Idatha ye-SEM yefilimu ezacile ye-CVD SiC, usayizi wekristalu ungu-2~1 Opm
Isakhiwo sekristalu sefilimu ye-CVD SiC yisakhiwo se-cubic esigxile ebusweni, futhi ukuqondisa kokukhula kwefilimu kusondele ku-100%
I-Silicon carbide (SiC) ihlanganisweisisekelo siyisisekelo esingcono kakhulu se-crystal silicon eyodwa ne-GaN epitaxy, okuyingxenye eyinhloko yesithando somlilo se-epitaxy. Isisekelo siyisisetshenziswa esibalulekile sokukhiqiza se-silicon ye-monocrystalline yamasekethe amakhulu ahlanganisiwe. Inobumsulwa obuphezulu, ukumelana nokushisa okuphezulu, ukumelana nokugqwala, ukucinana komoya okuhle nezinye izici ezinhle kakhulu zempahla.
Isicelo kanye nokusetshenziswa komkhiqizo
Isisekelo se-graphite sokukhula kwe-crystal silicon epitaxial eyodwaIfanele imishini ye-Aixtron, njll Ugqinsi lwe-Coating: 90~150umUbubanzi be-wafer crater ngu-55mm.
Isikhathi sokuthumela: Mar-14-2022