Intengo Ephansi Yase-China Yekhwalithi Ephakeme Yesifudumezi Sokushisa Esenziwe Ngezifiso Se-Polycrystalline Silicon Ingot Furnace

Intengo Ephansi Yase-China Yekhwalithi Ephakeme Isifudumezi Somlilo Esenziwe Ngezifiso Se-Polycrystalline Silicon Ingot Furnace Isithombe Esifakiwe

Incazelo emfushane:

Ubumsulwa <5ppm
‣ Ukufana okuhle kwe-doping
‣ Ukuminyana okuphezulu nokunamathela
‣ I-anti-corrosive enhle kanye nokumelana nekhabhoni

‣ Ukwenza ngokwezifiso kochwepheshe
‣ Isikhathi esincane sokuhola
‣ Ukunikezwa okuzinzile
‣ Ukulawulwa kwekhwalithi nokuthuthukiswa okuqhubekayo

I-Epitaxy ye-GaN ku-Sapphire(RGB/Mini/Micro LED);I-Epitaxy ye-GaN ku-Si Substrate(UVC);I-Epitaxy ye-GaN ku-Si Substrate(Idivayisi ye-elekthronikhi);I-Epitaxy ye-Si ku-Si Substrate(Isekhethi ehlanganisiwe);I-Epitaxy ye-SiC ku-SiC Substrate(I-substrate);I-Epitaxy ye-InP ku-InP

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Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Siyaqhubeka nokukhula futhi siphelelisa izixazululo nesevisi yethu. Ngesikhathi esifanayo, sisebenza ngenkuthalo ukwenza ucwaningo kanye nokuthuthukiswa Kwamanani Aphansi Kakhulu E-China High Quality Customized Graphite Heater ye-Polycrystalline Silicon Ingot Furnace, Ibhizinisi lethu lakhula ngokushesha ngosayizi nokuduma ngenxa yokuzinikela kwalo ngokuphelele ekukhiqizeni izinga eliphezulu, intengo enkulu imikhiqizo kanye nomhlinzeki wamakhasimende omangalisayo.
Siyaqhubeka nokukhula futhi siphelelisa izixazululo nesevisi yethu. Ngesikhathi esifanayo, sisebenza ngokuzikhandla ukwenza ucwaningo nokuthuthukisaI-China Graphite Heating Furnace, I-Graphite Thermal Field, Ukufeza kuphela umkhiqizo wekhwalithi enhle ukuze uhlangabezane nesidingo samakhasimende, yonke imikhiqizo yethu nezisombululo zihlolwe ngokuqinile ngaphambi kokuthunyelwa. Sihlale sicabanga ngombuzo ohlangothini lwamakhasimende, ngoba uyawina, siyawina!

2022 ikhwalithi ephezulu ye-MOCVD Susceptor Thenga ku-inthanethi eChina

Ukuminyana Okubonakalayo:	1.85 g/cm3
Ukungazweli Kagesi:	11 μΩm
I-Flexural Strenth:	49 MPa (500kgf/cm2)
Ukuqina Kwasogwini:	58
Umlotha:	<5ppm
I-Thermal Conductivity:	116 W/mK (100 kcal/mhr-℃)

Iwafa ucezu lwe-silicon oluwugqinsi olucishe lube yimilimitha elingu-1 olunendawo eyisicaba ngokwedlulele ngenxa yezinqubo ezidinga kakhulu ngokobuchwepheshe. Ukusetshenziswa okulandelayo kunquma ukuthi iyiphi inqubo yokukhula kwekristalu okufanele isetshenziswe. Enqubweni ye-Czochralski, isibonelo, i-silicon ye-polycrystalline iyancibilika futhi ikristalu yembewu encane yepensela ifakwe ku-silicon encibilikisiwe. Ikristalu yembewu ibe isijikeleziswa futhi kancane idonselwa phezulu. I-colossus enzima kakhulu, i-monocrystal, imiphumela. Kungenzeka ukukhetha izici zikagesi ze-monocrystal ngokungeza amayunithi amancane ama-dopants ahlanzekile kakhulu. Amakristalu afakwa ngokuhambisana nokucaciswa kwekhasimende abese epholishwa futhi asikwe abe izingcezu. Ngemuva kwezinyathelo ezingeziwe zokukhiqiza ezengeziwe, ikhasimende lithola ama-wafers alo acacisiwe emaphaketheni akhethekile, okuvumela ikhasimende ukuthi lisebenzise i-wafer ngokushesha emgqeni wayo wokukhiqiza.

Iwafa idinga ukudlula ezinyathelweni ezimbalwa ngaphambi kokuba ilungele ukusetshenziswa emishinini kagesi. Inqubo eyodwa ebalulekile i-silicon epitaxy, lapho ama-wafers enziwa khona kuma-graphite susceptors. Izakhiwo kanye nekhwalithi ye-susceptors inomthelela obalulekile kukhwalithi ye-epitaxial layer ye-wafer.

Ngezigaba zokubekwa kwefilimu ezacile njenge-epitaxy noma i-MOCVD, i-VET ihlinzeka ngemishini ye-graphitee ye-ultra-pure esetshenziselwa ukusekela ama-substrates noma “ama-wafers”. Emnyombweni wenqubo, le mishini, ama-epitaxy susceptors noma amapulatifomu esathelayithi e-MOCVD, aqala ngaphansi kwemvelo yokubeka:

Izinga lokushisa eliphezulu.
I-vacuum ephezulu.
Ukusetshenziswa kwezandulela zegesi ezinolaka.
Ukungcoliswa kweqanda, ukungabikho kokucwecwa.
Ukumelana nama-asidi aqinile ngesikhathi sokuhlanza