I-Silicon Carbide Crystal Eyenziwe kabusha Isikebhe Semboni Ye-Semiconductor

Izakhiwo ze-silicon carbide eyenziwe kabusha

I-recrystallized silicon carbide (R-SiC) iyinto esebenza kahle kakhulu enobulukhuni okwesibili kunedayimane, eyakhiwe ezingeni lokushisa eliphezulu elingaphezu kuka-2000 ℃. Igcina izakhiwo eziningi ezinhle kakhulu ze-SiC, njengamandla okushisa aphezulu, ukumelana nokugqwala okuqinile, ukumelana ne-oxidation okuhle kakhulu, ukumelana nokushaqeka okuhle kokushisayo nokunye.

● Izakhiwo ezinhle kakhulu zemishini. I-silicon carbide eyenziwe kabusha inamandla aphakeme nokuqina kune-carbon fibre, ukumelana nomthelela omkhulu, ingadlala ukusebenza kahle ezindaweni ezishisa kakhulu zokushisa, ingadlala ukusebenza okungcono kokumelana nezimo ezihlukahlukene. Ngaphezu kwalokho, ibuye ibe nokuguquguquka okuhle futhi ayilimazi kalula ukwelula nokugoba, okuthuthukisa kakhulu ukusebenza kwayo.

● Ukumelana nokugqwala okuphezulu. I-silicon carbide eyenziwe kabusha inokumelana nokugqwala okuphezulu emithonjeni ehlukahlukene, ingavimbela ukuguguleka kwemithombo yezindaba egqwalayo, ingagcina izakhiwo zayo zemishini isikhathi eside, inokunamathela okuqinile, ukuze ibe nempilo ende yenkonzo. Ngaphezu kwalokho, ibuye ibe nokuzinza okuhle kokushisa, ingakwazi ukuzivumelanisa nohlu oluthile lwezinguquko zokushisa, ithuthukise umphumela wayo wokufaka isicelo.

● I-Sintering ayinciphi. Ngenxa yokuthi inqubo ye-sintering ayinciphisi, akukho ukucindezeleka okuyinsalela okuzobangela ukuwohloka noma ukuqhekeka komkhiqizo, futhi izingxenye ezinobunjwa obuyinkimbinkimbi nokunemba okuphezulu zingalungiswa.