Ukusebenza Okuphezulu KwaseShayina 96% 99% I-Al2O3 I-Alumina Electronic Ceramic Substrate Yezingxenye Ze-Electronic

Incazelo emfushane:


  • Indawo Yomsuka:E-Zhejiang, China (Mainland)
  • Inombolo Yemodeli:Inombolo Yemodeli:
  • Ukwakhiwa Kwekhemikhali:I-graphite ehlanganiswe ne-SiC
  • Amandla e-Flexural:470Mpa
  • I-Thermal conductivity:300 W/mK
  • Ikhwalithi:Iphelele
  • Umsebenzi:I-CVD-SiC
  • Isicelo:I-Semiconductor / Photovoltaic
  • Ukuminyana:3.21 g/cc
  • Ukunwetshwa kwe-thermal:4 10-6/K
  • Umlotha: <5ppm
  • Isampula:Iyatholakala
  • Ikhodi ye-HS:6903100000
  • Imininingwane Yomkhiqizo

    Omaka bomkhiqizo

    Singakwazi njalo ukwanelisa amakhasimende ethu ahlonishwayo ngekhwalithi yethu enhle, intengo enhle kanye nenkonzo enhle ngenxa yokuthi sisebenza kanzima futhi sisebenza kanzima futhi sikwenza ngendlela engabizi kakhulu ye-High Performance China 96% 99% Al2O3I-Alumina Electronic Ceramic SubstrateIzingxenye Ze-elekthronikhi, Ngenxa yezinga eliphakeme kakhulu nelinolaka , sizoba umholi womkhakha, qiniseka ukuthi awungabazi ukusithinta ngomakhalekhukhwini noma nge-imeyili, uma uthanda cishe noma yiziphi izinto zethu.
    Singakwazi njalo ukwanelisa amakhasimende ethu ahlonishwayo ngekhwalithi yethu enhle, intengo enhle kanye nenkonzo enhle ngenxa yokuthi sisebenza kanzima futhi sisebenza kanzima futhi sikwenza ngendlela eyongayoI-Alumina Electronic Ceramic Substrate, I-China Alumina Ceramic, Izinto zethu zibonwa kabanzi futhi zithenjwa ngabasebenzisi futhi zingahlangabezana ngokuqhubekayo nezidingo zezomnotho nezenhlalo. Samukela amakhasimende amasha namadala avela kuyo yonke imikhakha yempilo ukuthi asithinte ukuze athole ubudlelwano bebhizinisi besikhathi esizayo futhi azuze impumelelo efanayo!

    Incazelo Yomkhiqizo

    Ukufakwa kwe-SiC ye-Graphite substrate yezinhlelo zokusebenza ze-Semiconductor kukhiqiza ingxenye enobumsulwa obuphakeme kanye nokumelana nomoya we-oxidizing. I-CVD SiC noma i-CVI SiC isetshenziswa kuGraphite yezingxenye zokuklama ezilula noma eziyinkimbinkimbi. Ukumboza kungasetshenziswa ngobukhulu obuhlukahlukene kanye nezingxenye ezinkulu kakhulu.

    I-SiC coating/coated MOCVD Susceptor

    Izici: · Ukumelana Nokushisa Okumangalisayo Okuhle Kakhulu · Ukumelana Nokushaqeka Okuhle Kakhulu Komzimba · Ukumelana Namakhemikhali Okuhle Kakhulu · Ukuhlanzeka Okuphakeme Kakhulu · Ukutholakala Ngokuma Okuyinkimbinkimbi · Kusetshenziswa ngaphansi kwe-Oxidizing Atmosphere

    Izici Ezijwayelekile Ze-Base Graphite Material:

    Ukuminyana Okubonakalayo: 1.85 g/cm3
    Ukungazweli Kagesi: 11 μΩm
    I-Flexural Strenth: 49 MPa (500kgf/cm2)
    Ukuqina Kwasogwini: 58
    Umlotha: <5ppm
    I-Thermal Conductivity: 116 W/mK (100 kcal/mhr-℃)

    I-SiC coating/coated MOCVD SusceptorI-SiC coating/coated MOCVD SusceptorI-SiC coating/coated MOCVD SusceptorI-SiC coating/coated MOCVD Susceptor

    Imikhiqizo eminingi
    I-SiC coating/coated MOCVD Susceptor

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