Iimbonakalo:
· Okugqwesileyo kweThermal Shock Resistance
· Okugqwesileyo koKuxhathisa ukothuka koMzimba
· Ukumelana neMichiza okugqwesileyo
· Ukucoceka okuphezulu okuphezulu
· Ukufumaneka kobume obuntsonkothileyo
·Isetyenziswa phantsi kwe-Oxidizing Atmosphere
Isicelo:
Iimpawu zeMveliso kunye nezinto eziluncedo:
1. Ukumelana neThermal ephezulu:Ngobunyulu obuphezuluUkwaleka kweSiC, i-substrate imelana nokushisa okukhulu, iqinisekisa ukusebenza okuhambelanayo kwiindawo ezifunayo ezifana ne-epitaxy kunye ne-semiconductor fabrication.
2. Ukomelezwa koKuhlala ixesha elide:Amacandelo egraphite aqatywe nge-SiC ayilelwe ukuxhathisa ukubola kunye ne-oxidation, enyusa ixesha lokuphila le-substrate xa kuthelekiswa ne-standard graphite substrates.
3. Vitreous Coated Graphite:Ubume obukhethekileyo be-vitreous yeUkwaleka kweSiCibonelela ngobulukhuni bomphezulu obugqwesileyo, ukunciphisa ukuguga kunye nokukrazula ngexesha lokulungiswa kobushushu obuphezulu.
4. High Purity SiC Coating:I-substrate yethu iqinisekisa ukungcoliseka okuncinci kwiinkqubo ezibuthathaka ze-semiconductor, enikezela ukuthembeka kumashishini afuna ukucoceka kwezinto ezingqongqo.
5. Isicelo seMarike eBanzi:II-SiC coated susceptor yegraphiteImakethi iyaqhubeka nokukhula njengoko imfuno ephambili yeemveliso ezigqunywe nge-SiC kwimveliso ye-semiconductor isanda, ibeka le substrate njengomdlali ophambili kwimakethi ye-graphite wafer carrier kunye ne-silicon carbide coated graphite tray market.
Iinkcazelo Ngeempawu zeSiseko seMathiriyeli yeGrafite:
| Uxinzelelo olubonakalayo: | 1.85 g/cm3 |
| Ukuxhathisa koMbane: | 11 μΩm |
| Ukuqina kweFlexural: | 49 MPa (500kgf/cm2) |
| Ukuqina konxweme: | 58 |
| Uthuthu: | <5ppm |
| I-Thermal Conductivity: | 116 W/mK (100 kcal/mhr-℃) |
| CVD SiC薄膜基本物理性能 Iimpawu ezisisiseko ze-CVD SiCukutyabeka | |
| 性质 / Ipropati | 典型数值 / Ixabiso eliqhelekileyo |
| 晶体结构 / Crystal Structure | FCC β isigaba 多晶，主要為(111）取向) |
| 密度 / Ubuninzi | 3.21 g/cm³ |
| 硬度 / Ukuqina | 2500 维氏硬度 (500g umthwalo) |
| 晶粒大小 / Grain SiZe | 2 ~ 10μm |
| 纯度 / Ucoceko lweMichiza | 99.99995% |
| 热容 / Umthamo wobushushu | 640 J·kg-1·K-1 |
| 升华温度 / Ubushushu bokunciphisa | 2700℃ |
| 抗弯强度 / Amandla e-Flexural | 415 MPa RT 4-point |
| 杨氏模量 / Young's Modulus | 430 Gpa 4pt bend, 1300℃ |
| 导热系数 / Thermal Conductivity | 300Wm-1·K-1 |
| 热膨胀系数 / Ukwandiswa kweThermal(CTE) | 4.5×10-6K-1 |
I-VET Amandla ngumvelisi wokwenyani weemveliso zegraphite kunye ne-silicon carbide ezineengubo ezahlukeneyo ezifana nokwaleka kwe-SiC, i-TaC yokwambathisa, i-glassy carbon coating, i-pyrolytic carbon coating, njl., inokubonelela ngeendawo ezahlukeneyo ezilungiselelwe i-semiconductor kunye ne-photovoltaic industry.
Iqela lethu lobuchwephesha livela kumaziko aphezulu ophando lwasekhaya, linokubonelela ngezisombululo zemathiriyeli yobuchwephesha.
Sisoloko siphuhlisa iinkqubo eziphambili zokubonelela ngemathiriyeli ephucukileyo, kwaye sisebenze itekhnoloji eyodwa enelungelo elilodwa lomenzi wechiza, enokwenza iqhina phakathi kwengubo kunye ne-substrate ibe ngqongqo kwaye ingabikho lula ekuthinteleni.
Wamkelekile ngokufudumeleyo ukuba undwendwele umzi-mveliso wethu, makhe sibenengxoxo eyongezelelekileyo!
