I-SiC igqunywe nge-Graphite substrate yeSemiconductor, iiTreyi zeGraphite, i-Sic Graphite epitaxy susceptors

Ukwalekwa kwe-SiC/yalekwe nge-Graphite substrate yeSemiconductor, iiTreyi zeGraphite, iSic Graphite epitaxy susceptors Umfanekiso obonisiweyo

Inkcazelo emfutshane:

Indawo yemvelaphi:E-Zhejiang, eTshayina (eMaphandleni)

Inombolo yoMfanekiso:Inqanawa3004

Ukuqulunqwa kwemichiza:I-SiC eqatywe igraphite

Amandla e-Flexural:470Mpa

I-Thermal conductivity:300 W/mK

Umgangatho:Igqibelele

Umsebenzi:CVD-SiC

Isicelo:Semiconductor / Photovoltaic

Ubuninzi:3.21 g/cc

Ukwandiswa kweThermal:4 10-6/K

Uthuthu: <5ppm

Isampulu:Iyafumaneka

Ikhowudi ye-HS:6903100000

Thumela i-imeyile kuthi Khuphela njengePDF

Iinkcukacha zeMveliso

Iithegi zeMveliso

Ukugquma kwe-SiC / kufakwe i-Graphite substrate yeSemiconductor,Iitreyi zeGraphite，Sic Graphitei-epitaxy susceptors,
Ikhabhoni ibonelela ngezinto ezixhaphakileyo, I-EPITAXY NE-MOCVD, i-epitaxy susceptors, Iitreyi zeGraphite, I-Wafer Susceptors,

I-CVD-SiC yokwambathisa ineempawu zesakhiwo esifanayo, izinto ezihlangeneyo, ukumelana nobushushu obuphezulu, ukumelana ne-oxidation, ukucoceka okuphezulu, ukuxhathisa kwe-asidi kunye ne-alkali kunye ne-reagent ye-organic, eneempawu ezizinzileyo zomzimba kunye neekhemikhali.

Xa kuthelekiswa nezinto ezicocekileyo zegraphite, i-graphite iqala i-oxidize kwi-400C, eya kubangela ukulahleka kwepowder ngenxa ye-oxidation, okubangelwa ukungcoliseka kwendalo kwizixhobo ze-peripheral kunye namagumbi okucoca, kunye nokwandisa ukungcola kokusingqongileyo okuphezulu.

Nangona kunjalo, ukugquma kwe-SiC kunokugcina uzinzo ngokwasemzimbeni kunye neekhemikhali kwii-degrees ze-1600, Isetyenziswa kakhulu kumashishini anamhlanje, ngakumbi kwishishini le-semiconductor.

Inkampani yethu ibonelela ngeenkonzo zenkqubo yokugquma kwe-SiC ngendlela ye-CVD kumphezulu wegraphite, iikeramics kunye nezinye izinto, ukwenzela ukuba iigesi ezikhethekileyo ezinekhabhoni kunye nesilicon zisabela kubushushu obuphezulu ukuze zifumane ubunyulu obuphezulu beamolekyuli zeSiC, iimolekyuli ezifakwe kumphezulu wezinto ezigqunyiweyo, ukwenza umaleko okhuselayo we-SIC. I-SIC eyenziwe idityaniswe ngokuqinileyo kwisiseko segraphite, inika isiseko segraphite iipropati ezikhethekileyo, ngaloo ndlela yenza umphezulu we-graphite compact, i-Porosity-free, ukumelana nobushushu obuphezulu, ukuxhathisa kwe-corrosion kunye nokumelana ne-oxidation.

Iimpawu eziphambili:

1. Ukumelana nobushushu obuphezulu be-oxidation:

Ukumelana ne-oxidation kusekuhle kakhulu xa ubushushu buphezulu ukuya kuma-1700 C.

2. Ukucoceka okuphezulu: okwenziwe nge-chemical vapour deposition phantsi kwemeko yokushisa kwe-chlorination ephezulu.

3. Ukumelana nokhukuliseko: ubunzima obuphezulu, indawo edibeneyo, iincinci ezincinci.

4. Ukumelana nokubola: i-asidi, i-alkali, ityuwa kunye ne-organic reagents.

IiNgcaciso eziPhambili ze-CVD-SIC yoMtyaliso:

SiC-CVD
Ukuxinana	(g/cc)	3.21
Amandla e-Flexural	(Mpa)	470
Ukwandiswa kweThermal	(10-6/K)	4
I-Thermal conductivity	(W/mK)	300

Ubunakho bokubonelela:

10000 Iqhekeza/Amaqhekeza ngenyanga
UkuPakisha kunye nokuhanjiswa:
Ukupakisha:Ukupakisha okuMgangatho & okuqinileyo
Ingxowa yePoly + Ibhokisi + Ikhathoni + Iphalethi
Izibuko:
Ningbo/Shenzhen/Shanghai
Ixesha lokukhokhela: